JPS5330282A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5330282A
JPS5330282A JP10364876A JP10364876A JPS5330282A JP S5330282 A JPS5330282 A JP S5330282A JP 10364876 A JP10364876 A JP 10364876A JP 10364876 A JP10364876 A JP 10364876A JP S5330282 A JPS5330282 A JP S5330282A
Authority
JP
Japan
Prior art keywords
electrodes
length
semiconductor device
gates
widen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10364876A
Other languages
Japanese (ja)
Inventor
Masakazu Aoki
Shinya Oba
Seiji Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10364876A priority Critical patent/JPS5330282A/en
Publication of JPS5330282A publication Critical patent/JPS5330282A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833Buried channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To widen the dynamic range of a CCD and increase transfer efficiency by making the length of the electrodes of input and transfer gates serving as a switch shorter than the length of the electrodes of storage gates storing the carriers as an information source and further defining the threshold voltage of each portion.
JP10364876A 1976-09-01 1976-09-01 Semiconductor device Pending JPS5330282A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10364876A JPS5330282A (en) 1976-09-01 1976-09-01 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10364876A JPS5330282A (en) 1976-09-01 1976-09-01 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5330282A true JPS5330282A (en) 1978-03-22

Family

ID=14359585

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10364876A Pending JPS5330282A (en) 1976-09-01 1976-09-01 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5330282A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6167963A (en) * 1984-09-11 1986-04-08 Sanyo Electric Co Ltd Charge coupling element
JPS6197860A (en) * 1984-10-18 1986-05-16 Nec Corp Charge transfer device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6167963A (en) * 1984-09-11 1986-04-08 Sanyo Electric Co Ltd Charge coupling element
JPS6197860A (en) * 1984-10-18 1986-05-16 Nec Corp Charge transfer device

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