JPS5330282A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5330282A JPS5330282A JP10364876A JP10364876A JPS5330282A JP S5330282 A JPS5330282 A JP S5330282A JP 10364876 A JP10364876 A JP 10364876A JP 10364876 A JP10364876 A JP 10364876A JP S5330282 A JPS5330282 A JP S5330282A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- length
- semiconductor device
- gates
- widen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000969 carrier Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To widen the dynamic range of a CCD and increase transfer efficiency by making the length of the electrodes of input and transfer gates serving as a switch shorter than the length of the electrodes of storage gates storing the carriers as an information source and further defining the threshold voltage of each portion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10364876A JPS5330282A (en) | 1976-09-01 | 1976-09-01 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10364876A JPS5330282A (en) | 1976-09-01 | 1976-09-01 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5330282A true JPS5330282A (en) | 1978-03-22 |
Family
ID=14359585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10364876A Pending JPS5330282A (en) | 1976-09-01 | 1976-09-01 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5330282A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6167963A (en) * | 1984-09-11 | 1986-04-08 | Sanyo Electric Co Ltd | Charge coupling element |
JPS6197860A (en) * | 1984-10-18 | 1986-05-16 | Nec Corp | Charge transfer device |
-
1976
- 1976-09-01 JP JP10364876A patent/JPS5330282A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6167963A (en) * | 1984-09-11 | 1986-04-08 | Sanyo Electric Co Ltd | Charge coupling element |
JPS6197860A (en) * | 1984-10-18 | 1986-05-16 | Nec Corp | Charge transfer device |
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