JPS53117388A - Charge transfer type semiconductor device - Google Patents

Charge transfer type semiconductor device

Info

Publication number
JPS53117388A
JPS53117388A JP3261277A JP3261277A JPS53117388A JP S53117388 A JPS53117388 A JP S53117388A JP 3261277 A JP3261277 A JP 3261277A JP 3261277 A JP3261277 A JP 3261277A JP S53117388 A JPS53117388 A JP S53117388A
Authority
JP
Japan
Prior art keywords
semiconductor device
type semiconductor
transfer type
charge transfer
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3261277A
Other languages
Japanese (ja)
Inventor
Koichi Nagasawa
Michihiro Yamada
Kazuyasu Fujishima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3261277A priority Critical patent/JPS53117388A/en
Publication of JPS53117388A publication Critical patent/JPS53117388A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures

Abstract

PURPOSE:To make a charge transfer type semiconductor device of high storage information density with the same transfer electrode structure by devicing input gate parts, making the charge filled state under transfer electrodes in plural stages and providing information respectively thereto.
JP3261277A 1977-03-23 1977-03-23 Charge transfer type semiconductor device Pending JPS53117388A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3261277A JPS53117388A (en) 1977-03-23 1977-03-23 Charge transfer type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3261277A JPS53117388A (en) 1977-03-23 1977-03-23 Charge transfer type semiconductor device

Publications (1)

Publication Number Publication Date
JPS53117388A true JPS53117388A (en) 1978-10-13

Family

ID=12363667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3261277A Pending JPS53117388A (en) 1977-03-23 1977-03-23 Charge transfer type semiconductor device

Country Status (1)

Country Link
JP (1) JPS53117388A (en)

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