JPS5279892A - Charge coupled device - Google Patents

Charge coupled device

Info

Publication number
JPS5279892A
JPS5279892A JP50158901A JP15890175A JPS5279892A JP S5279892 A JPS5279892 A JP S5279892A JP 50158901 A JP50158901 A JP 50158901A JP 15890175 A JP15890175 A JP 15890175A JP S5279892 A JPS5279892 A JP S5279892A
Authority
JP
Japan
Prior art keywords
coupled device
charge coupled
charge
charge accumulation
accumulation capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50158901A
Other languages
Japanese (ja)
Other versions
JPS5845829B2 (en
Inventor
Hidetsugu Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP50158901A priority Critical patent/JPS5845829B2/en
Publication of JPS5279892A publication Critical patent/JPS5279892A/en
Publication of JPS5845829B2 publication Critical patent/JPS5845829B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14825—Linear CCD imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To accurately reproduce the pitcured signal by making the charge accumulation capacity possessed by the transfer electrodes adjoining to the output gate electrode on charge transfer channels larger than the charge accumulation capacity possessed by the transfer electrodes other than these.
JP50158901A 1975-12-26 1975-12-26 Denkaketsu Gousoshi Expired JPS5845829B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50158901A JPS5845829B2 (en) 1975-12-26 1975-12-26 Denkaketsu Gousoshi

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50158901A JPS5845829B2 (en) 1975-12-26 1975-12-26 Denkaketsu Gousoshi

Publications (2)

Publication Number Publication Date
JPS5279892A true JPS5279892A (en) 1977-07-05
JPS5845829B2 JPS5845829B2 (en) 1983-10-12

Family

ID=15681830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50158901A Expired JPS5845829B2 (en) 1975-12-26 1975-12-26 Denkaketsu Gousoshi

Country Status (1)

Country Link
JP (1) JPS5845829B2 (en)

Also Published As

Publication number Publication date
JPS5845829B2 (en) 1983-10-12

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