JPS5250691A - Production of charge coupled device - Google Patents

Production of charge coupled device

Info

Publication number
JPS5250691A
JPS5250691A JP12703175A JP12703175A JPS5250691A JP S5250691 A JPS5250691 A JP S5250691A JP 12703175 A JP12703175 A JP 12703175A JP 12703175 A JP12703175 A JP 12703175A JP S5250691 A JPS5250691 A JP S5250691A
Authority
JP
Japan
Prior art keywords
production
coupled device
charge coupled
overlaying
ccd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12703175A
Other languages
Japanese (ja)
Inventor
Yutaka Yoriume
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP12703175A priority Critical patent/JPS5250691A/en
Publication of JPS5250691A publication Critical patent/JPS5250691A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To improve integrated density by removing overlaying part of the overlaying gate electrode of CCD.
JP12703175A 1975-10-22 1975-10-22 Production of charge coupled device Pending JPS5250691A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12703175A JPS5250691A (en) 1975-10-22 1975-10-22 Production of charge coupled device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12703175A JPS5250691A (en) 1975-10-22 1975-10-22 Production of charge coupled device

Publications (1)

Publication Number Publication Date
JPS5250691A true JPS5250691A (en) 1977-04-22

Family

ID=14949945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12703175A Pending JPS5250691A (en) 1975-10-22 1975-10-22 Production of charge coupled device

Country Status (1)

Country Link
JP (1) JPS5250691A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4907049A (en) * 1985-05-10 1990-03-06 U.S. Philips Corp. Charge-coupled semiconductor device having an improved electrode structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4907049A (en) * 1985-05-10 1990-03-06 U.S. Philips Corp. Charge-coupled semiconductor device having an improved electrode structure

Similar Documents

Publication Publication Date Title
US4038107B1 (en) Method for making transistor structures
AU498673B2 (en) Method for improving the sensibility of uterine musculature to oxytocin
JPS51126894A (en) Voltammetry apparatus
JPS5250691A (en) Production of charge coupled device
JPS5249767A (en) Semiconductor device
JPS5255478A (en) Charge transfer device
JPS51123074A (en) Production process of fet
JPS51140490A (en) Lateral transistor
JPS5255476A (en) Semiconductor device
PT64934B (en) Method for making transistor structures
JPS5228868A (en) Semiconductor device
JPS5278381A (en) Production of field effect semiconductor device
JPS51134074A (en) Method to manufacture the semiconductor unit
JPS51120982A (en) Method of increasing electron yield at lighttionization in the presence of sensitizer
JPS5333524A (en) Solid state pickup device
JPS51126772A (en) Electrolytic effect type semiconductor unit
JPS5272580A (en) Production of semiconductor device
JPS5432275A (en) Manufacture for charge transfer device
JPS527658A (en) Biasing system for field effect power transistors
JPS51118379A (en) Transistor
JPS51138175A (en) Method of manufacturing charge coupled device
JPS5238891A (en) Charge pump device
JPS5252580A (en) High frequency high output field effect transistor
JPS5233449A (en) Trap unit
JPS51112288A (en) Charge combining element manufacturing method