JPS5336485A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5336485A
JPS5336485A JP11149076A JP11149076A JPS5336485A JP S5336485 A JPS5336485 A JP S5336485A JP 11149076 A JP11149076 A JP 11149076A JP 11149076 A JP11149076 A JP 11149076A JP S5336485 A JPS5336485 A JP S5336485A
Authority
JP
Japan
Prior art keywords
semiconductor device
region
fet
drain
capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11149076A
Other languages
Japanese (ja)
Inventor
Kazuhiro Shimotori
Toshio Ichiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11149076A priority Critical patent/JPS5336485A/en
Publication of JPS5336485A publication Critical patent/JPS5336485A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Abstract

PURPOSE:To obtain a memory unit which features an increased integration performance and stabilized operation, by providing the third region unified with either the source or drain of FET or near them and forming a capacity on the third region.
JP11149076A 1976-09-16 1976-09-16 Semiconductor device Pending JPS5336485A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11149076A JPS5336485A (en) 1976-09-16 1976-09-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11149076A JPS5336485A (en) 1976-09-16 1976-09-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5336485A true JPS5336485A (en) 1978-04-04

Family

ID=14562579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11149076A Pending JPS5336485A (en) 1976-09-16 1976-09-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5336485A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4732872A (en) * 1981-03-25 1988-03-22 Tokyo Shibaura Denki Kabushiki Kaisha Method for making a bipolar transistor and capacitors using doped polycrystalline silicon or metal silicide

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4732872A (en) * 1981-03-25 1988-03-22 Tokyo Shibaura Denki Kabushiki Kaisha Method for making a bipolar transistor and capacitors using doped polycrystalline silicon or metal silicide

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