JPS5279786A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5279786A
JPS5279786A JP50157274A JP15727475A JPS5279786A JP S5279786 A JPS5279786 A JP S5279786A JP 50157274 A JP50157274 A JP 50157274A JP 15727475 A JP15727475 A JP 15727475A JP S5279786 A JPS5279786 A JP S5279786A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
electrodes
fhigh
intergration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50157274A
Other languages
Japanese (ja)
Other versions
JPS5549789B2 (en
Inventor
Yoshiiku Togei
Kunihiko Wada
Motoo Nakano
Akira Takei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50157274A priority Critical patent/JPS5279786A/en
Publication of JPS5279786A publication Critical patent/JPS5279786A/en
Publication of JPS5549789B2 publication Critical patent/JPS5549789B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Abstract

PURPOSE:To produce a CCD type RAM o fhigh intergration by arraying a multiplicity of gate electrodes along both sides of diffused layers and charge accumulation electrodes on the outside thereof, disposing these electrodes by way of an insulating film and making wiring as specified.
JP50157274A 1975-12-26 1975-12-26 Semiconductor memory device Granted JPS5279786A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50157274A JPS5279786A (en) 1975-12-26 1975-12-26 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50157274A JPS5279786A (en) 1975-12-26 1975-12-26 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5279786A true JPS5279786A (en) 1977-07-05
JPS5549789B2 JPS5549789B2 (en) 1980-12-13

Family

ID=15646061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50157274A Granted JPS5279786A (en) 1975-12-26 1975-12-26 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5279786A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5474684A (en) * 1977-11-03 1979-06-14 Western Electric Co Nnchannel mos memory
JPS58151062A (en) * 1982-01-28 1983-09-08 Toshiba Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5474684A (en) * 1977-11-03 1979-06-14 Western Electric Co Nnchannel mos memory
JPS58151062A (en) * 1982-01-28 1983-09-08 Toshiba Corp Semiconductor device
JPH0456469B2 (en) * 1982-01-28 1992-09-08 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS5549789B2 (en) 1980-12-13

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