JPS54124983A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54124983A
JPS54124983A JP3328478A JP3328478A JPS54124983A JP S54124983 A JPS54124983 A JP S54124983A JP 3328478 A JP3328478 A JP 3328478A JP 3328478 A JP3328478 A JP 3328478A JP S54124983 A JPS54124983 A JP S54124983A
Authority
JP
Japan
Prior art keywords
layer
turn
short part
voltage
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3328478A
Other languages
Japanese (ja)
Other versions
JPS6148271B2 (en
Inventor
Tsutomu Nakagawa
Akira Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3328478A priority Critical patent/JPS54124983A/en
Publication of JPS54124983A publication Critical patent/JPS54124983A/en
Publication of JPS6148271B2 publication Critical patent/JPS6148271B2/ja
Granted legal-status Critical Current

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  • Thyristors (AREA)

Abstract

PURPOSE: To improve performance by making the life of carriers in PB and NB layers equivalent to a short part shorter than those of the other four layer parts by controlling B density at the substrate surface of an emitter short part to more than 109/cm3.
CONSTITUTION: Since a p layer of 1020/cm3 is provided by diffusing B into emitter short part 5a, the pitch of layer 5a can be reduced to approximate 1/10, approximate 200μm, and the shortemitter occupation area is lessened in order to obtain resistance r22 of layer 5a as high as conventional one. Further, the layer 5 is small in diameter and the expansion of a conductive region at a turn-on time causes no trouble. Then, the lateral resistance between PB layer 2 and layer 5a decreases, the voltage drop by a dv/dt displacement current and residual carriers decreases to reduce dv/dt dependency at a turn-off time, and the relation between an ON-voltage and the turn-off time is improved remarkably. Further, a crystal defect is supplied from the main surface of layer 5a to that of the other one and much heavy metal is diffused into it; since the carrier-life distribution pitch is equal to the thickness of NB layer 1, residual carriers disappear even during lateral diffusion, so that the ON- voltage will be made low with the OFF-current reduced.
COPYRIGHT: (C)1979,JPO&Japio
JP3328478A 1978-03-22 1978-03-22 Semiconductor device Granted JPS54124983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3328478A JPS54124983A (en) 1978-03-22 1978-03-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3328478A JPS54124983A (en) 1978-03-22 1978-03-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54124983A true JPS54124983A (en) 1979-09-28
JPS6148271B2 JPS6148271B2 (en) 1986-10-23

Family

ID=12382226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3328478A Granted JPS54124983A (en) 1978-03-22 1978-03-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54124983A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828869A (en) * 1981-08-12 1983-02-19 Mitsubishi Electric Corp Semiconductor device
JPS61145864A (en) * 1984-12-20 1986-07-03 Fuji Electric Co Ltd Thyristor
JPS61287268A (en) * 1985-06-14 1986-12-17 Res Dev Corp Of Japan Gto thyristor
US4855799A (en) * 1987-12-22 1989-08-08 Kabushiki Kaisha Toshiba Power MOS FET with carrier lifetime killer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5828869A (en) * 1981-08-12 1983-02-19 Mitsubishi Electric Corp Semiconductor device
JPS61145864A (en) * 1984-12-20 1986-07-03 Fuji Electric Co Ltd Thyristor
JPS61287268A (en) * 1985-06-14 1986-12-17 Res Dev Corp Of Japan Gto thyristor
US4855799A (en) * 1987-12-22 1989-08-08 Kabushiki Kaisha Toshiba Power MOS FET with carrier lifetime killer

Also Published As

Publication number Publication date
JPS6148271B2 (en) 1986-10-23

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