JPS54124983A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS54124983A JPS54124983A JP3328478A JP3328478A JPS54124983A JP S54124983 A JPS54124983 A JP S54124983A JP 3328478 A JP3328478 A JP 3328478A JP 3328478 A JP3328478 A JP 3328478A JP S54124983 A JPS54124983 A JP S54124983A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- turn
- short part
- voltage
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE: To improve performance by making the life of carriers in PB and NB layers equivalent to a short part shorter than those of the other four layer parts by controlling B density at the substrate surface of an emitter short part to more than 109/cm3.
CONSTITUTION: Since a p layer of 1020/cm3 is provided by diffusing B into emitter short part 5a, the pitch of layer 5a can be reduced to approximate 1/10, approximate 200μm, and the shortemitter occupation area is lessened in order to obtain resistance r22 of layer 5a as high as conventional one. Further, the layer 5 is small in diameter and the expansion of a conductive region at a turn-on time causes no trouble. Then, the lateral resistance between PB layer 2 and layer 5a decreases, the voltage drop by a dv/dt displacement current and residual carriers decreases to reduce dv/dt dependency at a turn-off time, and the relation between an ON-voltage and the turn-off time is improved remarkably. Further, a crystal defect is supplied from the main surface of layer 5a to that of the other one and much heavy metal is diffused into it; since the carrier-life distribution pitch is equal to the thickness of NB layer 1, residual carriers disappear even during lateral diffusion, so that the ON- voltage will be made low with the OFF-current reduced.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3328478A JPS54124983A (en) | 1978-03-22 | 1978-03-22 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3328478A JPS54124983A (en) | 1978-03-22 | 1978-03-22 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS54124983A true JPS54124983A (en) | 1979-09-28 |
JPS6148271B2 JPS6148271B2 (en) | 1986-10-23 |
Family
ID=12382226
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3328478A Granted JPS54124983A (en) | 1978-03-22 | 1978-03-22 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54124983A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5828869A (en) * | 1981-08-12 | 1983-02-19 | Mitsubishi Electric Corp | Semiconductor device |
JPS61145864A (en) * | 1984-12-20 | 1986-07-03 | Fuji Electric Co Ltd | Thyristor |
JPS61287268A (en) * | 1985-06-14 | 1986-12-17 | Res Dev Corp Of Japan | Gto thyristor |
US4855799A (en) * | 1987-12-22 | 1989-08-08 | Kabushiki Kaisha Toshiba | Power MOS FET with carrier lifetime killer |
-
1978
- 1978-03-22 JP JP3328478A patent/JPS54124983A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5828869A (en) * | 1981-08-12 | 1983-02-19 | Mitsubishi Electric Corp | Semiconductor device |
JPS61145864A (en) * | 1984-12-20 | 1986-07-03 | Fuji Electric Co Ltd | Thyristor |
JPS61287268A (en) * | 1985-06-14 | 1986-12-17 | Res Dev Corp Of Japan | Gto thyristor |
US4855799A (en) * | 1987-12-22 | 1989-08-08 | Kabushiki Kaisha Toshiba | Power MOS FET with carrier lifetime killer |
Also Published As
Publication number | Publication date |
---|---|
JPS6148271B2 (en) | 1986-10-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4259683A (en) | High switching speed P-N junction devices with recombination means centrally located in high resistivity layer | |
US3538401A (en) | Drift field thyristor | |
US4662957A (en) | Method of producing a gate turn-off thyristor | |
US3324359A (en) | Four layer semiconductor switch with the third layer defining a continuous, uninterrupted internal junction | |
US4574296A (en) | Gate turn-off thyristor with a cathode base layer having four distinct impurity concentrations | |
JPH05218396A (en) | Thyristor with no gate with short hole or triac type protective part with no gate | |
JPS5596677A (en) | Semiconductor switching element and method of controlling the same | |
JPS54124983A (en) | Semiconductor device | |
JPS6466965A (en) | Gate turn-off thyristor | |
JPS57188875A (en) | Gate turn off thyristor | |
JPS57138175A (en) | Controlled rectifier for semiconductor | |
JPS5473585A (en) | Gate turn-off thyristor | |
JPS5718360A (en) | Gate controlling semiconductor element | |
US5005065A (en) | High current gate turn-off thyristor | |
JPS56150862A (en) | Semiconductor device | |
US3317359A (en) | Method of forming a transistor by diffusing recombination centers and device produced thereby | |
JPS63186473A (en) | Gate turn-off thyristor | |
JPS5667970A (en) | Gate turn-off thyristor | |
JPH05145064A (en) | Gate turn-off thyristor | |
JPS54120588A (en) | Gate turn-off thyristor | |
JPH0640581B2 (en) | Switching element | |
JPS5493989A (en) | Semiconductor device | |
JPS5683064A (en) | Thyristor | |
JPS5624972A (en) | Thyristor | |
JPS55102264A (en) | Semiconductor device and method of fabricating the same |