EP1635400A4 - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
EP1635400A4
EP1635400A4 EP04734415A EP04734415A EP1635400A4 EP 1635400 A4 EP1635400 A4 EP 1635400A4 EP 04734415 A EP04734415 A EP 04734415A EP 04734415 A EP04734415 A EP 04734415A EP 1635400 A4 EP1635400 A4 EP 1635400A4
Authority
EP
European Patent Office
Prior art keywords
layer
type
semiconductor layer
type semiconductor
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP04734415A
Other languages
German (de)
French (fr)
Japanese (ja)
Other versions
EP1635400A1 (en
EP1635400B1 (en
Inventor
Kazuhiro Fujikawa
Shin Harada
Hiroyuki Matsunami
Tsunenobu Kimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of EP1635400A1 publication Critical patent/EP1635400A1/en
Publication of EP1635400A4 publication Critical patent/EP1635400A4/en
Application granted granted Critical
Publication of EP1635400B1 publication Critical patent/EP1635400B1/en
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
    • H01L29/66901—Unipolar field-effect transistors with a PN junction gate, i.e. JFET with a PN homojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide

Abstract

An electric-field moderating layer (12) and a p-type buffer layer (2) are formed on an SiC single crystal substrate (1). The electric-field moderating layer (12) is so formed between the p-type buffer layer (2) and the SiC single crystal substrate (1) that it is in contact with the SiC single crystal substrate (1). An n-type semiconductor layer (3) is formed on the p-type buffer layer (2). A p-type semiconductor layer (10) is formed on the n-type semiconductor layer (3). An n+-type source region layer (4) and an n+-type drain region layer (5) are formed at a certain distance from each other within the p-type semiconductor layer (10). A p+-type gate region layer (6) is formed in a portion of the p-type semiconductor layer (10) lying between the n+-type source region layer (4) and the n+-type drain region layer (5).
EP04734415A 2003-06-13 2004-05-21 Field effect transistor Not-in-force EP1635400B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003169475 2003-06-13
PCT/JP2004/007397 WO2004112150A1 (en) 2003-06-13 2004-05-21 Field effect transistor

Publications (3)

Publication Number Publication Date
EP1635400A1 EP1635400A1 (en) 2006-03-15
EP1635400A4 true EP1635400A4 (en) 2007-09-26
EP1635400B1 EP1635400B1 (en) 2012-07-18

Family

ID=33549371

Family Applications (1)

Application Number Title Priority Date Filing Date
EP04734415A Not-in-force EP1635400B1 (en) 2003-06-13 2004-05-21 Field effect transistor

Country Status (8)

Country Link
US (1) US7321142B2 (en)
EP (1) EP1635400B1 (en)
JP (1) JP4730097B2 (en)
KR (1) KR100985808B1 (en)
CN (1) CN100505318C (en)
CA (1) CA2513516A1 (en)
TW (1) TWI251882B (en)
WO (1) WO2004112150A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4586547B2 (en) * 2005-01-24 2010-11-24 住友電気工業株式会社 Junction field effect transistor
JP5191109B2 (en) * 2006-08-29 2013-04-24 ローム株式会社 Junction field effect transistor
JP4751308B2 (en) 2006-12-18 2011-08-17 住友電気工業株式会社 Horizontal junction field effect transistor
JP4683141B2 (en) * 2009-05-01 2011-05-11 住友電気工業株式会社 Horizontal junction field effect transistor
JPWO2010131573A1 (en) 2009-05-11 2012-11-01 住友電気工業株式会社 Insulated gate bipolar transistor
CA2761473A1 (en) * 2009-05-11 2010-11-18 Sumitomo Electric Industries, Ltd. Semiconductor device
US20100308340A1 (en) * 2009-06-04 2010-12-09 General Electric Company Semiconductor device having a buried channel
JP2012164790A (en) * 2011-02-07 2012-08-30 Sumitomo Electric Ind Ltd Silicon carbide semiconductor device and method of manufacturing the same
CN115274907A (en) * 2022-07-30 2022-11-01 郑州轻工业大学 Mid-infrared GeSn illuminator with tensile strain film

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6431471A (en) * 1987-07-27 1989-02-01 Shimadzu Corp Semiconductor device
WO2001086727A2 (en) * 2000-05-10 2001-11-15 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors and methods of fabricating silicon carbide metal-semiconductor field effect transistors
JP2003068762A (en) * 2001-06-14 2003-03-07 Sumitomo Electric Ind Ltd Lateral junction field-effect transistor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4176368A (en) * 1978-10-10 1979-11-27 National Semiconductor Corporation Junction field effect transistor for use in integrated circuits
JPS6431471U (en) 1987-08-19 1989-02-27
JPH0974106A (en) 1995-09-07 1997-03-18 Sumitomo Chem Co Ltd Epitaxial substrate for field effect transistor
JP2000323499A (en) 1999-05-10 2000-11-24 Hitachi Cable Ltd Compound semiconductor epitaxial wafer
US7005708B2 (en) * 2001-06-14 2006-02-28 Sarnoff Corporation Minimum-dimension, fully-silicided MOS driver and ESD protection design for optimized inter-finger coupling

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6431471A (en) * 1987-07-27 1989-02-01 Shimadzu Corp Semiconductor device
WO2001086727A2 (en) * 2000-05-10 2001-11-15 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors and methods of fabricating silicon carbide metal-semiconductor field effect transistors
JP2003068762A (en) * 2001-06-14 2003-03-07 Sumitomo Electric Ind Ltd Lateral junction field-effect transistor
US20030168704A1 (en) * 2001-06-14 2003-09-11 Shin Harada Lateral junction type field effect transistor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2004112150A1 *

Also Published As

Publication number Publication date
KR20060017849A (en) 2006-02-27
CA2513516A1 (en) 2004-12-23
US7321142B2 (en) 2008-01-22
EP1635400A1 (en) 2006-03-15
WO2004112150A1 (en) 2004-12-23
CN1774815A (en) 2006-05-17
JP4730097B2 (en) 2011-07-20
US20060113574A1 (en) 2006-06-01
JPWO2004112150A1 (en) 2006-07-27
CN100505318C (en) 2009-06-24
TW200511441A (en) 2005-03-16
TWI251882B (en) 2006-03-21
KR100985808B1 (en) 2010-10-06
EP1635400B1 (en) 2012-07-18

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