JPS5688336A - Manufacture of semiconductor integrated circuit - Google Patents
Manufacture of semiconductor integrated circuitInfo
- Publication number
- JPS5688336A JPS5688336A JP16601079A JP16601079A JPS5688336A JP S5688336 A JPS5688336 A JP S5688336A JP 16601079 A JP16601079 A JP 16601079A JP 16601079 A JP16601079 A JP 16601079A JP S5688336 A JPS5688336 A JP S5688336A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- transistor
- isolation
- integrated circuit
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To improve the current amplification factor of a lateral PNP transistor in a semiconductor integrated circuit by forming a collector layer of the transistor simultaneously with an isolation layer. CONSTITUTION:The lateral PNP transistor is formed in an N type epitaxial layer surrounded by a buried layer 2 and isolation layers 3, 4. The collector layer 5a is formed simultaneously with the isolation layer 4 by a diffusion from the upper surface to be sufficiently deeper than an emitter layer 6. Since the collector layer 5a is sufficiently deep, minority carrier injected from the layer 6 flows in a direction as designated by arrows 9. Accordingly, leakage to a P<+> type substrate 1 or the isolation layers 3, 4 becomes less, thereby improving the current amplification factor of the transistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16601079A JPS5688336A (en) | 1979-12-19 | 1979-12-19 | Manufacture of semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16601079A JPS5688336A (en) | 1979-12-19 | 1979-12-19 | Manufacture of semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5688336A true JPS5688336A (en) | 1981-07-17 |
Family
ID=15823214
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16601079A Pending JPS5688336A (en) | 1979-12-19 | 1979-12-19 | Manufacture of semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5688336A (en) |
-
1979
- 1979-12-19 JP JP16601079A patent/JPS5688336A/en active Pending
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