JPS5688336A - Manufacture of semiconductor integrated circuit - Google Patents

Manufacture of semiconductor integrated circuit

Info

Publication number
JPS5688336A
JPS5688336A JP16601079A JP16601079A JPS5688336A JP S5688336 A JPS5688336 A JP S5688336A JP 16601079 A JP16601079 A JP 16601079A JP 16601079 A JP16601079 A JP 16601079A JP S5688336 A JPS5688336 A JP S5688336A
Authority
JP
Japan
Prior art keywords
layer
transistor
isolation
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16601079A
Other languages
Japanese (ja)
Inventor
Yusuke Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16601079A priority Critical patent/JPS5688336A/en
Publication of JPS5688336A publication Critical patent/JPS5688336A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To improve the current amplification factor of a lateral PNP transistor in a semiconductor integrated circuit by forming a collector layer of the transistor simultaneously with an isolation layer. CONSTITUTION:The lateral PNP transistor is formed in an N type epitaxial layer surrounded by a buried layer 2 and isolation layers 3, 4. The collector layer 5a is formed simultaneously with the isolation layer 4 by a diffusion from the upper surface to be sufficiently deeper than an emitter layer 6. Since the collector layer 5a is sufficiently deep, minority carrier injected from the layer 6 flows in a direction as designated by arrows 9. Accordingly, leakage to a P<+> type substrate 1 or the isolation layers 3, 4 becomes less, thereby improving the current amplification factor of the transistor.
JP16601079A 1979-12-19 1979-12-19 Manufacture of semiconductor integrated circuit Pending JPS5688336A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16601079A JPS5688336A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16601079A JPS5688336A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5688336A true JPS5688336A (en) 1981-07-17

Family

ID=15823214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16601079A Pending JPS5688336A (en) 1979-12-19 1979-12-19 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5688336A (en)

Similar Documents

Publication Publication Date Title
JPS54100273A (en) Memory circuit and variable resistance element
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
SE7714902L (en) POWER TRANSISTOR
JPS5688336A (en) Manufacture of semiconductor integrated circuit
JPS5785266A (en) Zener diode
JPS5762552A (en) Manufacture of semiconductor device
JPS56142661A (en) Semiconductor integrated circuit and manufacture thereof
JPS5687360A (en) Transistor device
JPS5676564A (en) Semiconductor device and manufacture thereof
JPS5788769A (en) Semiconductor device
JPS572568A (en) Semiconductor device
JPS5750473A (en) Semiconductor integrated circuit device
JPS54127689A (en) Semiconductor integrated circuit
JPS55102263A (en) Semiconductor integrated circuit
JPS5710963A (en) Semiconductor device and manufacture thereof
JPS6425566A (en) Manufacture of semiconductor integrated circuit
JPS5712546A (en) Semiconductor device and its manufacture
JPS55160459A (en) Semiconductor integrated circuit
JPS55125667A (en) Semiconductor device and fabricating the same
JPS572580A (en) Semiconductor device
JPS5710964A (en) Manufacture of semiconductor device
JPS55145364A (en) Semiconductor integrated circuit device
JPS6435951A (en) Semiconductor device
JPS54160187A (en) Semiconductor device
JPS5645046A (en) Semiconductor integrated circuit device and manufacture thereof