JPS5577153A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS5577153A
JPS5577153A JP15338578A JP15338578A JPS5577153A JP S5577153 A JPS5577153 A JP S5577153A JP 15338578 A JP15338578 A JP 15338578A JP 15338578 A JP15338578 A JP 15338578A JP S5577153 A JPS5577153 A JP S5577153A
Authority
JP
Japan
Prior art keywords
film
layer
frequency characteristic
separation film
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15338578A
Other languages
Japanese (ja)
Other versions
JPS592184B2 (en
Inventor
Tadashi Hirao
Koichi Kijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15338578A priority Critical patent/JPS592184B2/en
Publication of JPS5577153A publication Critical patent/JPS5577153A/en
Publication of JPS592184B2 publication Critical patent/JPS592184B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To improve integration degree and frequency characteristic by making a two-step structure separation film and reducing a distance between emitter layer and separation film oxide.
CONSTITUTION: An n+-buried layer is formed in a p-type Si substrate 1, an n- epitaxial layer 3 is laminated, SiO2 film 10, Si3N4 film 20 are laminated and an opening is made with a mask of a resist 30. After selectively etching Si3N4 film 20 the n-layer is etched removing the mask. Next a deep separation film 11, which reaches the collector buried layer is formed by means of selective oxidation. Further normally an npn-transistor is prepared. As a result thereof the prepared film 11 is of two-step constitution: one part 11 reaching the buried layer 2 and the other part 12 surrounding the emitter layer in the periphery of the former to reduce the leak generating rate between collector and emitter as well as a distance between the edge of emitter layer and the separation film thus improving frequency characteristic. Also the resulting reduced base area serves to lower collector-base capacity and to improve frequency characteristic.
COPYRIGHT: (C)1980,JPO&Japio
JP15338578A 1978-12-06 1978-12-06 Manufacturing method of semiconductor device Expired JPS592184B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15338578A JPS592184B2 (en) 1978-12-06 1978-12-06 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15338578A JPS592184B2 (en) 1978-12-06 1978-12-06 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5577153A true JPS5577153A (en) 1980-06-10
JPS592184B2 JPS592184B2 (en) 1984-01-17

Family

ID=15561314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15338578A Expired JPS592184B2 (en) 1978-12-06 1978-12-06 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS592184B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58184739A (en) * 1982-04-22 1983-10-28 Nec Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58184739A (en) * 1982-04-22 1983-10-28 Nec Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS592184B2 (en) 1984-01-17

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