JPS5577153A - Preparation of semiconductor device - Google Patents
Preparation of semiconductor deviceInfo
- Publication number
- JPS5577153A JPS5577153A JP15338578A JP15338578A JPS5577153A JP S5577153 A JPS5577153 A JP S5577153A JP 15338578 A JP15338578 A JP 15338578A JP 15338578 A JP15338578 A JP 15338578A JP S5577153 A JPS5577153 A JP S5577153A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- frequency characteristic
- separation film
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Weting (AREA)
Abstract
PURPOSE: To improve integration degree and frequency characteristic by making a two-step structure separation film and reducing a distance between emitter layer and separation film oxide.
CONSTITUTION: An n+-buried layer is formed in a p-type Si substrate 1, an n- epitaxial layer 3 is laminated, SiO2 film 10, Si3N4 film 20 are laminated and an opening is made with a mask of a resist 30. After selectively etching Si3N4 film 20 the n-layer is etched removing the mask. Next a deep separation film 11, which reaches the collector buried layer is formed by means of selective oxidation. Further normally an npn-transistor is prepared. As a result thereof the prepared film 11 is of two-step constitution: one part 11 reaching the buried layer 2 and the other part 12 surrounding the emitter layer in the periphery of the former to reduce the leak generating rate between collector and emitter as well as a distance between the edge of emitter layer and the separation film thus improving frequency characteristic. Also the resulting reduced base area serves to lower collector-base capacity and to improve frequency characteristic.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15338578A JPS592184B2 (en) | 1978-12-06 | 1978-12-06 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15338578A JPS592184B2 (en) | 1978-12-06 | 1978-12-06 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5577153A true JPS5577153A (en) | 1980-06-10 |
JPS592184B2 JPS592184B2 (en) | 1984-01-17 |
Family
ID=15561314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15338578A Expired JPS592184B2 (en) | 1978-12-06 | 1978-12-06 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS592184B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58184739A (en) * | 1982-04-22 | 1983-10-28 | Nec Corp | Manufacture of semiconductor device |
-
1978
- 1978-12-06 JP JP15338578A patent/JPS592184B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58184739A (en) * | 1982-04-22 | 1983-10-28 | Nec Corp | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS592184B2 (en) | 1984-01-17 |
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