JPS57194534A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57194534A
JPS57194534A JP56079580A JP7958081A JPS57194534A JP S57194534 A JPS57194534 A JP S57194534A JP 56079580 A JP56079580 A JP 56079580A JP 7958081 A JP7958081 A JP 7958081A JP S57194534 A JPS57194534 A JP S57194534A
Authority
JP
Japan
Prior art keywords
groove
crystalline glass
glass
collector
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56079580A
Other languages
Japanese (ja)
Inventor
Yoshinobu Hayashi
Junzo Yoshikawa
Yasuhiko Tamura
Masanao Kitagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP56079580A priority Critical patent/JPS57194534A/en
Publication of JPS57194534A publication Critical patent/JPS57194534A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To prevent the increase of backward current for the title device by a method wherein a groove reaching the junction of a collector base is provided, and a glass layer consisting of the mixture of crystalline glass and non-crystalline glass is adhered in the groove. CONSTITUTION:The groove 4, starting from the surface of the transistor on which a base region 2 and an emitter region 3 were provided and reaching the collector base junction 6, is provided on the collector region 1 consisting of an N<+>-N type Si substrate. Then, the non-crystalline glass cntaining 40-70wt% of non-crystalline glass and a glass layer 5 consisting of crystalline glass are adhered to the groove. As a result, the generation of channel on the surface of the collector region is prevented, and the increase of backward current is also prevented, thereby enabling to suppress the backward current to a smaller amount.
JP56079580A 1981-05-25 1981-05-25 Semiconductor device Pending JPS57194534A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56079580A JPS57194534A (en) 1981-05-25 1981-05-25 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56079580A JPS57194534A (en) 1981-05-25 1981-05-25 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57194534A true JPS57194534A (en) 1982-11-30

Family

ID=13693916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56079580A Pending JPS57194534A (en) 1981-05-25 1981-05-25 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57194534A (en)

Similar Documents

Publication Publication Date Title
JPS5395581A (en) Manufacture for semiconductor device
JPS57194534A (en) Semiconductor device
JPS57162365A (en) Semiconductor device
JPS5778171A (en) Thyristor
JPS57134967A (en) Manufacture of semiconductor device
JPS57115857A (en) Semiconductor device
JPS56100460A (en) Bipolar mos semiconductor device and manufacture thereof
JPS5389690A (en) Semiconductor device
JPS5776873A (en) Manufacture of semiconductor device
JPS5740939A (en) P-n junction formation
JPS5726462A (en) Semiconductor device
JPS5749249A (en) Semiconductor integrated circuit device
JPS54109384A (en) Semiconductor device
JPS55128820A (en) Method of manufacturing semiconductor device
JPS57143859A (en) Semiconductor device
JPS5587446A (en) Manufacture of semiconductor device
JPS5710964A (en) Manufacture of semiconductor device
JPS5724536A (en) Preparation of semiconductor device
JPS5583261A (en) Semiconductor device
JPS57197832A (en) Manufacture of semiconductor device
JPS5591866A (en) Manufacture of semiconductor device
JPS57157567A (en) Vertical type p-n-p transistor
JPS5580324A (en) Semiconductor device
JPS5595358A (en) Bipolar transistor
JPS5577167A (en) Semiconductor device