EP0913003A4 - Avalanching semiconductor device having an epitaxially grown layer - Google Patents

Avalanching semiconductor device having an epitaxially grown layer

Info

Publication number
EP0913003A4
EP0913003A4 EP97933308A EP97933308A EP0913003A4 EP 0913003 A4 EP0913003 A4 EP 0913003A4 EP 97933308 A EP97933308 A EP 97933308A EP 97933308 A EP97933308 A EP 97933308A EP 0913003 A4 EP0913003 A4 EP 0913003A4
Authority
EP
European Patent Office
Prior art keywords
avalanching
semiconductor device
epitaxially grown
grown layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP97933308A
Other languages
German (de)
French (fr)
Other versions
EP0913003A1 (en
Inventor
Leon Leslie Jostad
Joseph Charles Boisvert
John Thomas Montroy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Photonix Inc
Original Assignee
Advanced Photonix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Photonix Inc filed Critical Advanced Photonix Inc
Publication of EP0913003A1 publication Critical patent/EP0913003A1/en
Publication of EP0913003A4 publication Critical patent/EP0913003A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
EP97933308A 1996-07-03 1997-07-03 Avalanching semiconductor device having an epitaxially grown layer Withdrawn EP0913003A4 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US3534996P 1996-07-03 1996-07-03
US35349P 1996-07-03
PCT/US1997/011768 WO1998000873A1 (en) 1996-07-03 1997-07-03 Avalanching semiconductor device having an epitaxially grown layer

Publications (2)

Publication Number Publication Date
EP0913003A1 EP0913003A1 (en) 1999-05-06
EP0913003A4 true EP0913003A4 (en) 1999-08-25

Family

ID=21882130

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97933308A Withdrawn EP0913003A4 (en) 1996-07-03 1997-07-03 Avalanching semiconductor device having an epitaxially grown layer

Country Status (5)

Country Link
EP (1) EP0913003A4 (en)
JP (1) JP2001525117A (en)
AU (1) AU3652597A (en)
CA (1) CA2259502A1 (en)
WO (1) WO1998000873A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4711725A (en) * 1985-06-26 1987-12-08 Rohm And Haas Co. Method of stabilizing aqueous systems
US6794631B2 (en) 2002-06-07 2004-09-21 Corning Lasertron, Inc. Three-terminal avalanche photodiode
US11081612B2 (en) 2015-12-01 2021-08-03 Sharp Kabushiki Kaisha Avalanche photodiode
US11101400B2 (en) * 2017-11-28 2021-08-24 Luxtera Llc Method and system for a focused field avalanche photodiode
CN108666382B (en) * 2018-07-09 2024-03-19 长沙理工大学 SOI-based LSAMBM avalanche photodiode and preparation method thereof
US11777049B2 (en) * 2019-08-28 2023-10-03 Artilux, Inc. Photo-detecting apparatus with low dark current

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886579A (en) * 1972-07-28 1975-05-27 Hitachi Ltd Avalanche photodiode
JPS5669876A (en) * 1979-11-12 1981-06-11 Mitsubishi Electric Corp Manufacture of silicon avalanche photo-diode
US5057892A (en) * 1990-09-14 1991-10-15 Xsirius Photonics, Inc. Light responsive avalanche diode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4586066A (en) * 1984-04-10 1986-04-29 Rca Inc. Avalanche photodetector
CA1228662A (en) * 1984-04-10 1987-10-27 Paul P. Webb Double mesa avalanche photodetector
US5146296A (en) * 1987-12-03 1992-09-08 Xsirius Photonics, Inc. Devices for detecting and/or imaging single photoelectron

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886579A (en) * 1972-07-28 1975-05-27 Hitachi Ltd Avalanche photodiode
JPS5669876A (en) * 1979-11-12 1981-06-11 Mitsubishi Electric Corp Manufacture of silicon avalanche photo-diode
US5057892A (en) * 1990-09-14 1991-10-15 Xsirius Photonics, Inc. Light responsive avalanche diode

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 005, no. 133 (E - 071) 25 August 1981 (1981-08-25) *
See also references of WO9800873A1 *
SZE S M: "PHYSICS OF SEMICONDUCTOR DEVICES", 1981, JOHN WILEY & SONS, NEW YORK,, XP002107219 *

Also Published As

Publication number Publication date
CA2259502A1 (en) 1998-01-08
AU3652597A (en) 1998-01-21
JP2001525117A (en) 2001-12-04
WO1998000873A1 (en) 1998-01-08
EP0913003A1 (en) 1999-05-06

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