GB2355587B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB2355587B
GB2355587B GB0101050A GB0101050A GB2355587B GB 2355587 B GB2355587 B GB 2355587B GB 0101050 A GB0101050 A GB 0101050A GB 0101050 A GB0101050 A GB 0101050A GB 2355587 B GB2355587 B GB 2355587B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0101050A
Other versions
GB2355587A (en
GB0101050D0 (en
Inventor
Tatsuhiko Fujihira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority claimed from GB9701204A external-priority patent/GB2309336B/en
Publication of GB0101050D0 publication Critical patent/GB0101050D0/en
Publication of GB2355587A publication Critical patent/GB2355587A/en
Application granted granted Critical
Publication of GB2355587B publication Critical patent/GB2355587B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
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    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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GB0101050A 1996-01-22 1997-01-21 Semiconductor device Expired - Fee Related GB2355587B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP793596 1996-01-22
GB9701204A GB2309336B (en) 1996-01-22 1997-01-21 Semiconductor device

Publications (3)

Publication Number Publication Date
GB0101050D0 GB0101050D0 (en) 2001-02-28
GB2355587A GB2355587A (en) 2001-04-25
GB2355587B true GB2355587B (en) 2001-05-30

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Application Number Title Priority Date Filing Date
GB0101031A Expired - Fee Related GB2355586B (en) 1996-01-22 1997-01-21 Semiconductor device
GB0101027A Expired - Fee Related GB2355584B (en) 1996-01-22 1997-01-21 Semiconductor decice
GB0101055A Expired - Fee Related GB2355589B (en) 1996-01-22 1997-01-21 Semiconductor device
GB0101052A Withdrawn GB2355588A (en) 1996-01-22 1997-01-21 A vertical field effect transistor having a drift region
GB0101050A Expired - Fee Related GB2355587B (en) 1996-01-22 1997-01-21 Semiconductor device
GB0101030A Expired - Fee Related GB2355585B (en) 1996-01-22 1997-01-21 Semiconductor device

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GB0101031A Expired - Fee Related GB2355586B (en) 1996-01-22 1997-01-21 Semiconductor device
GB0101027A Expired - Fee Related GB2355584B (en) 1996-01-22 1997-01-21 Semiconductor decice
GB0101055A Expired - Fee Related GB2355589B (en) 1996-01-22 1997-01-21 Semiconductor device
GB0101052A Withdrawn GB2355588A (en) 1996-01-22 1997-01-21 A vertical field effect transistor having a drift region

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GB0101030A Expired - Fee Related GB2355585B (en) 1996-01-22 1997-01-21 Semiconductor device

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JP3925253B2 (en) 2002-03-15 2007-06-06 住友電気工業株式会社 Horizontal junction field effect transistor and method of manufacturing the same
CN110164814B (en) * 2018-02-13 2021-12-21 无锡华润上华科技有限公司 SOI substrate and method for producing the same

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GB2355584B (en) 2001-05-30
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GB2355584A (en) 2001-04-25
GB2355586A (en) 2001-04-25

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