GB2355584B - Semiconductor decice - Google Patents

Semiconductor decice

Info

Publication number
GB2355584B
GB2355584B GB0101027A GB0101027A GB2355584B GB 2355584 B GB2355584 B GB 2355584B GB 0101027 A GB0101027 A GB 0101027A GB 0101027 A GB0101027 A GB 0101027A GB 2355584 B GB2355584 B GB 2355584B
Authority
GB
United Kingdom
Prior art keywords
decice
semiconductor
semiconductor decice
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0101027A
Other versions
GB0101027D0 (en
GB2355584A (en
Inventor
Tatsuhiko Fujihira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority claimed from GB9701204A external-priority patent/GB2309336B/en
Publication of GB0101027D0 publication Critical patent/GB0101027D0/en
Publication of GB2355584A publication Critical patent/GB2355584A/en
Application granted granted Critical
Publication of GB2355584B publication Critical patent/GB2355584B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
GB0101027A 1996-01-22 1997-01-21 Semiconductor decice Expired - Fee Related GB2355584B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP793596 1996-01-22
GB9701204A GB2309336B (en) 1996-01-22 1997-01-21 Semiconductor device

Publications (3)

Publication Number Publication Date
GB0101027D0 GB0101027D0 (en) 2001-02-28
GB2355584A GB2355584A (en) 2001-04-25
GB2355584B true GB2355584B (en) 2001-05-30

Family

ID=26310839

Family Applications (6)

Application Number Title Priority Date Filing Date
GB0101052A Withdrawn GB2355588A (en) 1996-01-22 1997-01-21 A vertical field effect transistor having a drift region
GB0101050A Expired - Fee Related GB2355587B (en) 1996-01-22 1997-01-21 Semiconductor device
GB0101031A Expired - Fee Related GB2355586B (en) 1996-01-22 1997-01-21 Semiconductor device
GB0101027A Expired - Fee Related GB2355584B (en) 1996-01-22 1997-01-21 Semiconductor decice
GB0101030A Expired - Fee Related GB2355585B (en) 1996-01-22 1997-01-21 Semiconductor device
GB0101055A Expired - Fee Related GB2355589B (en) 1996-01-22 1997-01-21 Semiconductor device

Family Applications Before (3)

Application Number Title Priority Date Filing Date
GB0101052A Withdrawn GB2355588A (en) 1996-01-22 1997-01-21 A vertical field effect transistor having a drift region
GB0101050A Expired - Fee Related GB2355587B (en) 1996-01-22 1997-01-21 Semiconductor device
GB0101031A Expired - Fee Related GB2355586B (en) 1996-01-22 1997-01-21 Semiconductor device

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JP3925253B2 (en) * 2002-03-15 2007-06-06 住友電気工業株式会社 Horizontal junction field effect transistor and method of manufacturing the same
CN110164814B (en) * 2018-02-13 2021-12-21 无锡华润上华科技有限公司 SOI substrate and method for producing the same

Citations (4)

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Publication number Priority date Publication date Assignee Title
US4626879A (en) * 1982-12-21 1986-12-02 North American Philips Corporation Lateral double-diffused MOS transistor devices suitable for source-follower applications
US4754310A (en) * 1980-12-10 1988-06-28 U.S. Philips Corp. High voltage semiconductor device
US5216275A (en) * 1991-03-19 1993-06-01 University Of Electronic Science And Technology Of China Semiconductor power devices with alternating conductivity type high-voltage breakdown regions
US5294824A (en) * 1992-07-31 1994-03-15 Motorola, Inc. High voltage transistor having reduced on-resistance

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WO1988003328A1 (en) * 1986-10-27 1988-05-05 Hughes Aircraft Company Striped-channel transistor and method of forming the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4754310A (en) * 1980-12-10 1988-06-28 U.S. Philips Corp. High voltage semiconductor device
US4626879A (en) * 1982-12-21 1986-12-02 North American Philips Corporation Lateral double-diffused MOS transistor devices suitable for source-follower applications
US5216275A (en) * 1991-03-19 1993-06-01 University Of Electronic Science And Technology Of China Semiconductor power devices with alternating conductivity type high-voltage breakdown regions
US5294824A (en) * 1992-07-31 1994-03-15 Motorola, Inc. High voltage transistor having reduced on-resistance

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GB2355585B (en) 2001-05-30
GB2355588A (en) 2001-04-25
GB2355586A (en) 2001-04-25
GB0101031D0 (en) 2001-02-28
GB2355587B (en) 2001-05-30
GB2355589B (en) 2001-05-30
GB0101027D0 (en) 2001-02-28
GB2355589A (en) 2001-04-25
GB2355587A (en) 2001-04-25
GB2355584A (en) 2001-04-25
GB2355585A (en) 2001-04-25
GB0101050D0 (en) 2001-02-28
GB0101055D0 (en) 2001-02-28
GB0101052D0 (en) 2001-02-28
GB2355586B (en) 2001-05-30
GB0101030D0 (en) 2001-02-28

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