GB2315920B - Semiconductor arrangement - Google Patents

Semiconductor arrangement

Info

Publication number
GB2315920B
GB2315920B GB9715319A GB9715319A GB2315920B GB 2315920 B GB2315920 B GB 2315920B GB 9715319 A GB9715319 A GB 9715319A GB 9715319 A GB9715319 A GB 9715319A GB 2315920 B GB2315920 B GB 2315920B
Authority
GB
United Kingdom
Prior art keywords
semiconductor arrangement
semiconductor
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB9715319A
Other versions
GB2315920A (en
GB9715319D0 (en
Inventor
Ulrich Bommer
Jochen Gerner
Klaus Gillessen
Albert Marshall
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Conti Temic Microelectronic GmbH
Vishay Semiconductor GmbH
Original Assignee
Vishay Semiconductor GmbH
Temic Telefunken Microelectronic GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vishay Semiconductor GmbH, Temic Telefunken Microelectronic GmbH filed Critical Vishay Semiconductor GmbH
Publication of GB9715319D0 publication Critical patent/GB9715319D0/en
Publication of GB2315920A publication Critical patent/GB2315920A/en
Application granted granted Critical
Publication of GB2315920B publication Critical patent/GB2315920B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
GB9715319A 1996-07-30 1997-07-21 Semiconductor arrangement Expired - Lifetime GB2315920B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1996130689 DE19630689C1 (en) 1996-07-30 1996-07-30 Semiconductor device and manufacturing method

Publications (3)

Publication Number Publication Date
GB9715319D0 GB9715319D0 (en) 1997-09-24
GB2315920A GB2315920A (en) 1998-02-11
GB2315920B true GB2315920B (en) 2000-12-06

Family

ID=7801249

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9715319A Expired - Lifetime GB2315920B (en) 1996-07-30 1997-07-21 Semiconductor arrangement

Country Status (4)

Country Link
JP (1) JPH10107314A (en)
DE (1) DE19630689C1 (en)
GB (1) GB2315920B (en)
TW (1) TW408507B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19962037A1 (en) * 1999-12-22 2001-07-12 Vishay Semiconductor Gmbh Illuminating diode used in wireless data transmission has a light-producing layer sequence made of gallium aluminum arsenide and a neighboring p-conducting semiconductor layer
DE10032531A1 (en) 2000-07-05 2002-01-24 Osram Opto Semiconductors Gmbh emitting diode
DE10039945B4 (en) * 2000-08-16 2006-07-13 Vishay Semiconductor Gmbh A method of fabricating a dual heterostructure GaAIAs light emitting semiconductor device and corresponding semiconductor device
DE10056476B4 (en) * 2000-11-15 2012-05-03 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor body and method for its production
DE10329079B4 (en) * 2003-06-27 2014-10-23 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0143957A1 (en) * 1983-10-28 1985-06-12 Siemens Aktiengesellschaft Process for making A3B5 light-emitting diodes
EP0317228A2 (en) * 1987-11-13 1989-05-24 Mitsubishi Kasei Polytec Company Epitaxial wafer
US5525539A (en) * 1994-09-27 1996-06-11 Opto Diode Corporation Method for forming a light emitting diode for use as an efficient emitter or detector of light at a common wavelength

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0356027A1 (en) * 1988-07-29 1990-02-28 Kuraray Co., Ltd. Near-infrared ray absorbent resin composition and method for production thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0143957A1 (en) * 1983-10-28 1985-06-12 Siemens Aktiengesellschaft Process for making A3B5 light-emitting diodes
US4606780A (en) * 1983-10-28 1986-08-19 Siemens Aktiengesellschaft Method for the manufacture of A3 B5 light-emitting diodes
EP0317228A2 (en) * 1987-11-13 1989-05-24 Mitsubishi Kasei Polytec Company Epitaxial wafer
US5525539A (en) * 1994-09-27 1996-06-11 Opto Diode Corporation Method for forming a light emitting diode for use as an efficient emitter or detector of light at a common wavelength

Also Published As

Publication number Publication date
DE19630689C1 (en) 1998-01-15
TW408507B (en) 2000-10-11
GB2315920A (en) 1998-02-11
JPH10107314A (en) 1998-04-24
GB9715319D0 (en) 1997-09-24

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Expiry date: 20170720