CN108666382B - SOI-based LSAMBM avalanche photodiode and preparation method thereof - Google Patents
SOI-based LSAMBM avalanche photodiode and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 25
- 239000010703 silicon Substances 0.000 claims abstract description 25
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 20
- 238000010521 absorption reaction Methods 0.000 claims abstract description 13
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- 230000000149 penetrating effect Effects 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 4
- 238000005269 aluminizing Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 6
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 238000000926 separation method Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 239000011265 semifinished product Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 235000005811 Viola adunca Nutrition 0.000 description 2
- 240000009038 Viola odorata Species 0.000 description 2
- 235000013487 Viola odorata Nutrition 0.000 description 2
- 235000002254 Viola papilionacea Nutrition 0.000 description 2
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses an SOI-based LSAMBM (lateral absorption region-multi-buffer region-multiplication region separation) avalanche photodiode and a preparation method thereof, wherein the avalanche photodiode comprises an SOI substrate and SiO 2 Oxide layer and electrode A, K, siO 2 An oxide layer disposed on the surface of the SOI substrate, P ‑ One side of the silicon film is provided with P + The other side of the zone is provided with a buffer zone, a P multiplication zone and N which are adjacently arranged in sequence + Region, P + P remaining in the gap between the zone and the buffer zone ‑ The region forms an absorption region, the buffer region comprises at least two buffer layers with doping concentration distributed in steps, and the electrode A penetrates through SiO 2 Oxide layer and then N + Region contact conduction, electrode K penetrating SiO 2 After oxidizing the layer and P + The region contact is conductive. The invention can greatly reduce dark current, effectively solve the contradiction between light receiving area and junction capacitance, reduce parasitic capacitance, improve frequency response, have no fringe electric field, can ignore curvature effect, reduce multiplication noise, improve electric field strength of an absorption area, reduce reverse electric field strength, and effectively solve the contradiction between avalanche voltage, responsivity and frequency response.
Description
Technical Field
The invention relates to a single photon detector technology, in particular to an SOI-based LSAMBM avalanche photodiode and a preparation method thereof.
Background
A Single-Photon Detector (SPD) as an optical signal reading device plays a very critical role in 3D imaging, optical ranging, spatial detection, and quantum communication systems. Avalanche Photo Diode (APD) is an optimal device for manufacturing a single photon detector due to the characteristics of large gain, high response speed, high detection efficiency, small volume, light weight, low power consumption and the like.
At present, the APD mainly adopts a bipolar structure based on a longitudinal PN junction, and the responsivity and the frequency response are mutually restricted. In addition, in order to solve the problem of edge breakdown at the PN junction, a Shallow Trench Isolation (STI) structure protection ring is generally adopted, so that dark current of the device can be effectively reduced, but avalanche voltage and power consumption of the device are increased. While APDs of absorption and multiplication region separation (Separate Absorption and Multiplication structure, SAM) structure have lower multiplication noise than APDs of PIN structure, there is a conflict between avalanche voltage and frequency response. Moreover, APD under bulk silicon technology has large substrate leakage current and parasitic capacitance, limiting the sensitivity and frequency response of APD.
Disclosure of Invention
The invention aims to solve the technical problems that: aiming at the problems in the prior art, in order to solve the contradiction between avalanche voltage, responsivity and frequency response, the invention provides an SOI-based LSAMBM avalanche photodiode and a preparation method thereof.
In order to solve the technical problems, the invention adopts the following technical scheme: an SOI-based lsabm avalanche photodiode characterized by: comprising an SOI substrate, siO 2 Oxide layer and electrode A, K, said SiO 2 The oxide layer is arranged on the surface of the SOI substrate, and the SOI substrate comprises P which are sequentially stacked - Substrate, siO 2 Layer and P - A silicon film, said P - One side of the silicon film is provided with P + The other side of the zone is provided with a buffer zone, a P multiplication zone and N which are adjacently arranged in sequence + Region of P + In the gap between the zone and the buffer zoneReserved P - The region forms an absorption region, the buffer region comprises at least two buffer layers with doping concentration distributed in steps, and the electrode A penetrates through SiO 2 Oxide layer and then N + Zone contact conduction, the electrode K penetrates through SiO 2 After oxidizing the layer and P + The region contact is conductive.
Preferably, the SiO of the SOI substrate 2 The layer thickness was 380nm.
Preferably, the SOI substrate is P - The substrate thickness was 500nm.
Preferably, the P - The doping concentration of the silicon film is 10 15 cm -3 。
Preferably, the P - The thickness of the silicon film is 100 nm-800 nm.
The invention also provides a preparation method of the SOI-based LSAMBM avalanche photodiode, which comprises the following implementation steps:
1) Preparing an SOI substrate comprising P sequentially stacked - Substrate, siO 2 Layer and P - A silicon thin film;
2) Generating P of a specified thickness according to the wavelength of the absorbed light - A silicon thin film;
3) P in SOI substrate by ion implantation doping - P is formed on one side of the silicon film + The other side of the region sequentially forms a buffer region, a P multiplication region and N which are adjacently arranged + Region of P + P remaining in the gap between the zone and the buffer zone - The buffer region comprises at least two buffer layers with doping concentrations distributed in a step manner;
4) SiO formation on the surface 2 An oxide layer;
5) In SiO 2 Aluminizing the oxide surface to produce electrode A, K, wherein electrode A penetrates SiO 2 Oxide layer and then N + Region contact conduction, electrode K penetrating SiO 2 After oxidizing the layer and P + The region contact is conductive.
The SOI-based LSAMBM avalanche photodiode of the present invention has the following advantages: 1. the substrate leakage current of the SOI structure can reach pA order, thereby greatly reducing dark current, effectively reducing parasitic capacitance and improving frequency response. The transverse structure has no fringe electric field, curvature effect can be ignored, and the contradiction between the light receiving area and the junction capacitance is effectively solved, so that the contradiction between the responsivity and the frequency response is solved.
2. According to Lambert law and by combining the characteristics of SOI CMOS process, P can be determined according to the requirement - The thickness of the silicon film is shaped to accommodate different types of light detection. For example, the thickness of the silicon film is determined to be 100-800 nm, so that the detection wave band of the photodetector is blue-violet light (380-520 nm).
3. The transverse structure adopts a SAM structure with an absorption region and a multiplication region separated, so that multiplication noise is reduced.
4. The buffer region comprises at least two buffer layers with doping concentration in a step distribution, and the step doping buffer region is added between the absorption region and the multiplication region, so that the reverse electric field intensity at the junction of the absorption region and the multiplication region is reduced, the electric field intensity of the absorption region is improved, the drift speed of carriers is increased, the frequency response is improved, and the contradiction between avalanche voltage and the frequency response is effectively solved.
The preparation method of the SOI-based LSAMBM avalanche photodiode can realize the preparation of the SOI-based LSAMBM avalanche photodiode, and has the advantage of simple process.
Drawings
Fig. 1 is a schematic cross-sectional view of an embodiment of the present invention.
Fig. 2 is a schematic top view of an embodiment of the present invention.
FIG. 3 is a schematic cross-sectional view of the semi-finished product obtained in step 1) of the method according to the embodiment of the invention.
FIG. 4 is a schematic cross-sectional view of the semi-finished product obtained in step 2) of the method according to the embodiment of the invention.
FIG. 5 is a schematic cross-sectional view of the semi-finished product obtained in step 3) of the method according to the embodiment of the invention.
Detailed Description
As shown in fig. 1 and 2, the SOI-based lsabm avalanche photodiode of the present embodiment includes an SOI substrate, siO 2 Oxide layer and electrode A, K, said SiO 2 Oxide layerIs arranged on the surface of an SOI substrate, the SOI substrate comprises P which are sequentially stacked - Substrate, siO 2 Layer and P - A silicon film, said P - One side of the silicon film is provided with P + The other side of the zone is provided with a buffer zone, a P multiplication zone and N which are adjacently arranged in sequence + Region of P + P remaining in the gap between the zone and the buffer zone - The region forms an absorption region, the buffer region comprises at least two buffer layers with doping concentration distributed in steps, and the electrode A penetrates through SiO 2 Oxide layer and then N + Zone contact conduction, the electrode K penetrates through SiO 2 After oxidizing the layer and P + The region contact is conductive.
In this embodiment, siO of the SOI substrate 2 The layer thickness was 380nm.
In this embodiment, P of SOI substrate - The substrate thickness was 500nm.
In the present embodiment, P - The doping concentration of the silicon film is 10 15 cm -3 。
In the present embodiment, P - The thickness of the silicon film is 100-800 nm, and according to the Lambert law and by combining the SOI CMOS process characteristics, the detection wave band of the photodetector can be blue-violet light (380-520 nm).
The implementation steps of the preparation method of the SOI-based LSAMBM avalanche photodiode in the embodiment comprise:
1) Preparing an SOI substrate comprising P sequentially stacked - Substrate, siO 2 Layer and P - The silicon film adopts an oxidation stripping technology according to the Lambert law and the wavelength of detected light to generate P with the thickness of a specified value between 100nm and 800nm - A semi-finished product structure of the formed silicon film is shown in figure 3;
2) P in SOI substrate by ion implantation doping - P is formed on one side of the silicon film + The other side of the region sequentially forms a buffer region, a P multiplication region and N which are adjacently arranged + Region of P + P remaining in the gap between the zone and the buffer zone - The region forms an absorption region, the buffer region comprises two buffer layers with doping concentration distributed in steps, and the obtained semi-finished productThe structure of the product is shown in figure 4;
3) SiO formation on the surface 2 An oxide layer, and the obtained semi-finished product structure is shown in figure 5;
4) In SiO 2 Aluminizing the oxide surface to produce electrode A, K, wherein electrode A penetrates SiO 2 Oxide layer and then N + The region is contacted and conducted, and the electrode K penetrates through the SiO2 oxide layer and then is connected with P + The area contact is conducted, and the obtained finished product structure is shown in figure 1.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above examples, and all technical solutions belonging to the concept of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to the present invention may occur to one skilled in the art without departing from the principles of the present invention and are intended to be within the scope of the present invention.
Claims (6)
1. An SOI-based lsabm avalanche photodiode characterized by: comprising an SOI substrate, siO 2 Oxide layer and electrode A, K, said SiO 2 The oxide layer is arranged on the surface of the SOI substrate, and the SOI substrate comprises P which are sequentially stacked - Substrate, siO 2 Layer and P - A silicon film, said P - One side of the silicon film is provided with P + The other side of the zone is provided with a buffer zone, a P multiplication zone and N which are adjacently arranged in sequence + Region of P + P remaining in the gap between the zone and the buffer zone - The region forms an absorption region, the buffer region comprises at least two buffer layers with doping concentration distributed in steps, and the electrode A penetrates through SiO 2 Oxide layer and then N + Zone contact conduction, the electrode K penetrates through SiO 2 After oxidizing the layer and P + The region contact is conductive.
2. The SOI-based lsabm avalanche photodiode of claim 1 wherein: siO of the SOI substrate 2 The layer thickness was 380nm.
3. The SOI of claim 1A basal lsammb avalanche photodiode characterized by: p of the SOI substrate - The thickness of the shaped substrate was 500nm.
4. The SOI-based lsabm avalanche photodiode of claim 1 wherein: the P is - The doping concentration of the silicon film is 10 15 cm -3 。
5. The SOI-based lsabm avalanche photodiode of claim 1 wherein: the P is - The thickness of the silicon film is 100 nm-800 nm.
6. A method of fabricating an SOI-based lsabm avalanche photodiode according to any one of claims 1 to 5 comprising the steps of:
1) Preparing an SOI substrate comprising P sequentially stacked - Substrate, siO 2 Layer and P - A silicon thin film;
2) Generating P of a specified thickness according to the wavelength of the absorbed light - A silicon thin film;
3) P in SOI substrate by ion implantation doping - P is formed on one side of the silicon film + The other side of the region sequentially forms a buffer region, a P multiplication region and N which are adjacently arranged + Region of P + P remaining in the gap between the zone and the buffer zone - The buffer region comprises at least two buffer layers with doping concentrations distributed in a step manner;
4) SiO formation on the surface 2 An oxide layer;
5) In SiO 2 Aluminizing the oxide surface to produce electrode A, K, wherein electrode A penetrates SiO 2 Oxide layer and then N + Region contact conduction, electrode K penetrating SiO 2 After oxidizing the layer and P + The region contact is conductive.
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| US10854768B2 (en) * | 2018-12-20 | 2020-12-01 | Hewlett Packard Enterprise Development Lp | Optoelectronic component with current deflected to high-gain paths comprising an avalanche photodiode having an absorbing region on a p-doped lateral boundary, an n-doped lateral boundary and an amplifying region |
| CN111933742B (en) * | 2020-07-30 | 2022-09-09 | 武汉光谷信息光电子创新中心有限公司 | Avalanche photodetector and preparation method thereof |
| CN111952399B (en) * | 2020-08-20 | 2022-02-25 | 中国科学院半导体研究所 | Waveguide coupled photoelectric detector and preparation method thereof |
| CN112289883B (en) * | 2020-10-30 | 2023-03-28 | 华中科技大学 | Three-dimensional semiconductor avalanche photoelectric detection chip and preparation method thereof |
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