CN105576072B - Low noise avalanche photodetector and preparation method thereof - Google Patents
Low noise avalanche photodetector and preparation method thereof Download PDFInfo
- Publication number
- CN105576072B CN105576072B CN201610047625.2A CN201610047625A CN105576072B CN 105576072 B CN105576072 B CN 105576072B CN 201610047625 A CN201610047625 A CN 201610047625A CN 105576072 B CN105576072 B CN 105576072B
- Authority
- CN
- China
- Prior art keywords
- ohmic contact
- layer
- contact layer
- type
- type ohmic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 24
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 9
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 8
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910005898 GeSn Inorganic materials 0.000 claims description 4
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000005693 optoelectronics Effects 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 230000001550 time effect Effects 0.000 abstract description 3
- 230000005684 electric field Effects 0.000 description 8
- 230000009471 action Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- -1 AlGaAsSb Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention discloses a kind of low noise avalanche photodetector and preparation method thereof, the low noise avalanche photodetector includes N-type ohmic contact layer/p-type ohmic contact layer, dynode layer, charge layer, the p-type ohmic contact layer/N-type ohmic contact layer that different doping types are sequentially formed by diffusion, ion implanting, and the bottom between charge layer and p-type ohmic contact layer/N-type ohmic contact layer is formed with substrate；The charge layer, p-type ohmic contact layer/inverted trapezoidal groove is formed between N-type ohmic contact layer and substrate；Formed with absorbed layer in the inverted trapezoidal groove.P-type electrode and N-type electrode are respectively equipped with the p-type ohmic contact layer and N-type ohmic contact layer.It is characteristic of the invention that it is two-dimensional transversal structure to improve one-dimensional longitudinal avalanche photodetector, the effective thickness by reducing dynode layer drops low k-value to nano-scale using the dead time effect of nanometer multiplication region.
Description
Technical field
The invention belongs to field of photoelectric technology, be related specifically to a kind of low noise two-dimensional structure avalanche photodetector and its
Manufacture method.
Background technology
Photo-detector is the device for converting light signals into electric signal.In semiconductor photodetector, incident photon excites
After the photo-generated carrier gone out enters external circuit under applying bias, measurable photoelectric current is formed.Avalanche photodetector is to light
The amplification of electric current is based on ionizing collision effect, and under certain conditions, accelerated electronics and hole obtain enough energy
Amount, a pair of new electron-hole pairs can be produced with lattice collisions, this process is a kind of chain reaction, so as to by light absorbs
Caused pair of electrons-hole by impact ionization to that can produce substantial amounts of electron-hole pair to form larger secondary light
Electric current.Therefore in optical communication system, based on the photoreceiver of avalanche photodetector and common photodetector receiver phase
Than sensitivity can improve more than 5dB.But simultaneously it was noticed that due to the limitation of snowslide settling time, avalanche optoelectronic detection
The bandwidth of operation of device is more much lower than common photodetector.Therefore, the frequency response characteristic of avalanche photodetector is improved to it
Application in high speed optical communication system is extremely important.For different actual demands, it is necessary to double to avalanche photodetector
Layer or even whole absorption, gradual change, electric charge and gaining structure are separately optimized respectively.For avalanche photodetector, mistake
Surplus noise factor is an important parameter for characterizing its noiseproof feature, and excess noise fact is generally by the k of avalanche photodetector
Value determines, here, k is defined as the ratio between impact ionization coefficient of different type carrier (electronics or hole).K values are smaller, right
The Frequency Response for improving avalanche photodetector is more favourable.Therefore, it is very crucial for how reducing the k values of avalanche photodetector
's.
Optical communication field often uses the multiplied material (body multiplied material) of avalanche photodetector, including iii-v InP at present
And InAlAs, its k value is respectively in the range of 0.4-0.5 and 0.2-0.3；IV races Si, its k value are less than 0.1.
The content of the invention
The technical problem to be solved in the present invention is overcome the deficiencies in the prior art, and provides a kind of low noise avalanche optoelectronic and visit
Device and preparation method thereof is surveyed, to reduce effective k values of existing avalanche photodetector.
In order to solve the above-mentioned technical problem, the present invention discloses a kind of low noise avalanche photodetector, and it includes passing through expansion
Scattered, ion implanting sequentially forms N-type ohmic contact layer/p-type ohmic contact layer, dynode layer, charge layer, the P of different doping types
Type ohmic contact layer/N-type ohmic contact layer, and the bottom shape between charge layer and p-type ohmic contact layer/N-type ohmic contact layer
Into there is substrate；The charge layer, p-type ohmic contact layer/inverted trapezoidal groove is formed between N-type ohmic contact layer and substrate；
Formed with absorbed layer in the inverted trapezoidal groove；.
In addition, invention additionally discloses the preparation method of above-mentioned avalanche photodetector, this method includes：
S1. different region of doped material are made：Different doping types are sequentially formed by the technique of diffusion, ion implanting
N-type ohmic contact layer/p-type ohmic contact layer, dynode layer, charge layer, p-type ohmic contact layer/N-type ohmic contact layer, and electric charge
Bottom between layer and p-type ohmic contact layer/N-type ohmic contact layer is formed with substrate；
S2. by etching region of doped material, charge layer, p-type ohmic contact layer/N-type ohmic contact layer and substrate it
Between formed an inverted trapezoidal groove；
S3. absorbed layer is prepared on the inverted trapezoidal groove of etching；
S4. P-type electrode and N-type electrode are produced in Si p-types and N-type ohmic contact layer.
In the above-mentioned technical solutions, the region of doped material is doping Si material areas or doping InP material areas.
In the above-mentioned technical solutions, the dynode layer be Si, InP, InAlAs, AlGaAs, InAs, AlGaAsSb or
HgCdTe；The absorbed layer uses material as Ge, GeSn, InGaAs, GaAs, InAs.
Further, optimize as performance, it is preferable that before the formation of Ge absorbed layers, be prepared for SiGe transition zones；
Further, optimize as performance, it is preferable that at the interface of InGaAs absorbed layers and N-type ohmic contact layer, prepare
InGaAsP transition zones.
In the above-mentioned technical solutions, quantum efficiency is improved using waveguiding structure and photonic crystal, plasma.
Further, optimize as performance, avalanche photodetector obtained above is formed into one-dimensional or two-dimentional battle array
Row.
This structure of low noise avalanche photodetector of the present invention is to improve one-dimensional longitudinal avalanche photodetector to be
Two-dimensional transversal structure, the effective thickness by reducing dynode layer reduce k to nano-scale using the dead time effect of nanometer multiplication region
Value.
Brief description of the drawings
Fig. 1 is the structural representation of Si/Ge avalanche photodetectors in embodiment 1；
Fig. 2 is the electric field schematic diagram of avalanche photodetector in embodiment 1；
Fig. 3 is the structural representation of InP/InGaAs avalanche photodetectors in embodiment 2.
Embodiment
Embodiment 1
As embodiment 1, the present invention discloses a kind of Si/Ge avalanche photodetectors, and its structure is as shown in Figure 1.It is this
Detector includes but is not limited in structure：P-type ohmic contact layer 1, absorbed layer 2, charge layer 3, dynode layer 4, heavily doped N-type Europe
Nurse contact layer 5 and Si substrates 6, wherein concrete structure parameter are as shown in table 1.
Table 1
It is characteristic of the invention that it is two-dimensional structure to improve one-dimensional avalanche photodetector, low k-value drops using dead time effect.Institute
It is that doping concentration is higher than by carrying out highly doped formation at the low-doped lateral both ends of silicon layer to state N-type and p-type ohmic contact layer
1.0×1018/cm3.Described charge layer is using the p-type or n-type doping accurately controlled between p-type and N-type ohmic contact layer
Formed, doping concentration scope is 1 × 1017/cm3-9×1017/cm3, the thickness and doping concentration of charge layer will be restricted mutually to control
The electric field of absorbed layer and dynode layer processed so that the electric field of dynode layer wants sufficiently high to cause avalanche multiplication effect.And absorbed layer
Electric field wants sufficiently low to suppress leakage current, and the depletion region of avalanche photodetector can be made completely depleted.Dynode layer is by intrinsic
Or unintentional doped semiconductor materials are formed, its thickness selects to consider APD gain-bandwidth product and sensitivity；The suction
The quantum efficiency of detector will be ensured by receiving the selection of thickness degree, while consider the electricity bandwidth of avalanche photodetector.
The preparation method for the above-mentioned Si/Ge avalanche photodetectors that the present embodiment provides, comprises the following steps：
S1. different doping InP material areas are made, are formed successively on InP by techniques such as diffusion, ion implantings different
P-type ohmic contact layer 7, dynode layer 8, charge layer 9, the heavily doped N-type ohmic contact layer 11 of doping type；And charge layer 9 with again
Bottom between doped N-type ohmic contact layer 11 is formed with InP substrate 12；
S2. an inverted trapezoidal groove is formed on InP material areas by etching, i.e., in charge layer 9, heavily doped N-type Europe
An inverted trapezoidal groove is formed between nurse contact layer 11 and InP substrate 12；
S3. InGaAs absorbed layers region is produced on the inverted trapezoidal groove of etching.
The P-type electrode and N-type electrode of Si/Ge avalanche photodetectors are produced in Si p-types and N-type ohmic contact layer
On, by etched recesses, Ge absorbed layers can be grown on Si substrates, do not have further growth Si epitaxial layers on Ge epitaxial layers,
Therefore dark current is advantageously reduced.Meanwhile the photonic absorption of Ge absorbed layers and the fortune of electronics can conveniently be controlled using this structure
It is dynamic, it is easier to be optically coupled, ensure the electricity bandwidth of device while so as to obtain high-quantum efficiency.When light enters snow
After the intrinsic Ge absorbed layers for collapsing photodetector, under electric field action, referring to accompanying drawing 2, because of trapezoidal contact interface, its caused light
Raw electrons reach Si dynode layers under electric field action, and a series of multiplicative process then occurs.
Embodiment 2
As embodiment 2, the present invention discloses a kind of InP/InGaAs avalanche photodetectors, and its structure is shown in accompanying drawing 3.It is this
Detector includes but is not limited in structure：P-type ohmic contact layer 7, dynode layer 8, charge layer 9, absorbed layer 10, heavily doped N-type
Ohmic contact layer 11 and InP substrate 12, wherein concrete structure parameter are as shown in table 2.
Table 2
The preparation method that the present embodiment 2 provides above-mentioned InP/InGaAs avalanche photodetectors, comprises the following steps：
S1. different doping InP material areas are made, are formed successively on InP by techniques such as diffusion, ion implantings different
P-type ohmic contact layer 7, dynode layer 8, charge layer 9, the heavily doped N-type ohmic contact layer 11 of doping type；And charge layer 9 with again
Bottom between doped N-type ohmic contact layer 11 is formed with InP substrate 12；
S2. an inverted trapezoidal groove is formed on InP material areas by etching, i.e., in charge layer 9, heavily doped N-type Europe
An inverted trapezoidal groove is formed between nurse contact layer 11 and InP substrate 12；
S3. InGaAs absorbed layers region is produced on the inverted trapezoidal groove of etching.
The P-type electrode and N-type electrode of InP/InGaAs avalanche photodetectors are produced in InP p-type and N-type ohm
On contact layer, by etched recesses, InGaAs absorbed layers can be grown in InP substrate.When light enters avalanche optoelectronic detection
After the eigen I nGaAs absorbed layers of device, under electric field action, its caused light induced electron can reach InP multiplications under electric field action
Layer, then occurs a series of multiplicative process.
Finally it should be noted that above embodiment is only by taking Si and InP materials as an example, with the technology of the explanation present invention
Scheme and unrestricted, other multiplied materials, than include but is not limited to as mentioned above Si, InP, InAlAs, AlGaAs,
InAs, AlGaAsSb, HgCdTe etc., and absorbed layer uses material can be according to this for Ge, GeSn, InGaAs, GaAs, InAs
The spirit of inventive embodiments provides similar structure and technology of preparing completely.Although the present invention is carried out specifically with reference to example
It is bright, it should be appreciated by those skilled in the art that can simultaneously be modified to technical scheme or equivalent substitution.But
Without departing from the spirit and scope of technical solution of the present invention, it all should cover among scope of the presently claimed invention.
Claims (10)
- A kind of 1. low noise avalanche photodetector, it is characterised in that：Including sequentially forming difference by diffusion, ion implanting and mixing N-type ohmic contact layer/p-type ohmic contact layer, dynode layer, charge layer, the p-type ohmic contact layer/N-type Ohmic contact of miscellany type Layer, and the bottom between charge layer and p-type ohmic contact layer/N-type ohmic contact layer is formed with substrate；Described N-type and p-type ohm Contact layer is that doping concentration is higher than 1.0 × 10 by carrying out highly doped formation at the low-doped lateral both ends of silicon layer18/cm3, institute The charge layer stated is to be formed between p-type and N-type ohmic contact layer using the p-type or n-type doping that accurately control, doping concentration model Enclose for 1 × 1017/cm3-9×1017/cm3, the shape of the charge layer, p-type ohmic contact layer/between N-type ohmic contact layer and substrate Into an inverted trapezoidal groove；Formed with absorbed layer in the inverted trapezoidal groove.
- 2. low noise avalanche photodetector as claimed in claim 1, it is characterised in that：The dynode layer use material for Si, InP, InAlAs, AlGaAs, InAs, AlGaAsSb or HgCdTe；The absorbed layer use material for Ge, GeSn, InGaAs、GaAs、InAs；The substrate is Si or InP.
- 3. low noise avalanche photodetector as claimed in claim 1 or 2, it is characterised in that：The p-type ohmic contact layer and Being made respectively on N-type ohmic contact layer has P-type electrode and N-type electrode.
- A kind of 4. preparation method of avalanche photodetector as claimed in claim 1, it is characterised in that including：S1. different region of doped material are made：The N-type of different doping types is sequentially formed by the technique of diffusion, ion implanting Ohmic contact layer/p-type ohmic contact layer, dynode layer, charge layer, p-type ohmic contact layer/N-type ohmic contact layer, and charge layer with Bottom between p-type ohmic contact layer/N-type ohmic contact layer is formed with substrate；S2. by etching region of doped material, in charge layer, the shape of p-type ohmic contact layer/between N-type ohmic contact layer and substrate Into an inverted trapezoidal groove；S3. absorbed layer is prepared on the inverted trapezoidal groove of etching；S4. P-type electrode and N-type electrode are produced in Si p-types and N-type ohmic contact layer.
- 5. the preparation method of avalanche photodetector as claimed in claim 4, it is characterised in that：The region of doped material is to mix Miscellaneous Si material areas or doping InP material areas.
- 6. the preparation method of avalanche photodetector as claimed in claim 4, it is characterised in that：The dynode layer be Si, InP, InAlAs, AlGaAs, InAs, AlGaAsSb or HgCdTe；The absorbed layer use material for Ge, GeSn, InGaAs, GaAs, InAs。
- 7. the preparation method of avalanche photodetector as claimed in claim 6, it is characterised in that：Before the formation of Ge absorbed layers, It is prepared for SiGe transition zones.
- 8. the preparation method of avalanche photodetector as claimed in claim 6, it is characterised in that:In InGaAs absorbed layers and N-type The interface of ohmic contact layer, it is prepared for InGaAsP transition zones.
- 9. the preparation method of avalanche photodetector as claimed in claim 4, it is characterised in that:It is brilliant using waveguiding structure and photon Body, plasma improve quantum efficiency.
- 10. the preparation method of avalanche photodetector as claimed in claim 4, it is characterised in that:Obtained avalanche optoelectronic is visited Survey device and form one-dimensional or two-dimensional array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610047625.2A CN105576072B (en) | 2016-01-25 | 2016-01-25 | Low noise avalanche photodetector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610047625.2A CN105576072B (en) | 2016-01-25 | 2016-01-25 | Low noise avalanche photodetector and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105576072A CN105576072A (en) | 2016-05-11 |
| CN105576072B true CN105576072B (en) | 2018-02-23 |
Family
ID=55885999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610047625.2A Active CN105576072B (en) | 2016-01-25 | 2016-01-25 | Low noise avalanche photodetector and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105576072B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2641620C1 (en) * | 2016-09-20 | 2018-01-18 | Общество с ограниченной ответственностью "ДЕтектор Фотонный Аналоговый" | Avalanche photodetector |
| JP7090479B2 (en) * | 2018-06-06 | 2022-06-24 | 富士通株式会社 | Optical semiconductor devices and optical transmission devices |
| JP6726248B2 (en) * | 2018-09-25 | 2020-07-22 | 沖電気工業株式会社 | Semiconductor light receiving element and photoelectric fusion module |
| CN111211182A (en) * | 2018-11-19 | 2020-05-29 | 上海新微技术研发中心有限公司 | Waveguide type photoelectric detector and manufacturing method thereof |
| RU2732695C1 (en) * | 2019-03-12 | 2020-09-21 | Общество С Ограниченной Ответственностью "Детектор Фотонный Аналоговый" (Ооо "Дефан") | Avalanche photodetector (embodiments) and method of manufacturing thereof (embodiments) |
| JP7443672B2 (en) * | 2019-04-05 | 2024-03-06 | 富士通オプティカルコンポーネンツ株式会社 | Optical semiconductor devices and optical transmission devices |
| EP3940798A1 (en) * | 2020-07-13 | 2022-01-19 | Imec VZW | Avalanche photodiode device with a curved absorption region |
| CN111933742B (en) * | 2020-07-30 | 2022-09-09 | 武汉光谷信息光电子创新中心有限公司 | Avalanche photodetector and preparation method thereof |
| CN111952399B (en) * | 2020-08-20 | 2022-02-25 | 中国科学院半导体研究所 | Waveguide coupled photoelectric detector and preparation method thereof |
| CN112289883B (en) * | 2020-10-30 | 2023-03-28 | 华中科技大学 | Three-dimensional semiconductor avalanche photoelectric detection chip and preparation method thereof |
| CN112951942B (en) * | 2021-04-23 | 2021-11-09 | 湖南汇思光电科技有限公司 | Method for manufacturing germanium avalanche photodetector based on gallium arsenide substrate |
| CN113838940B (en) * | 2021-08-19 | 2024-03-08 | 北京无线电测量研究所 | Integrated photoelectric detector and manufacturing method thereof |
| WO2023125283A1 (en) * | 2021-12-29 | 2023-07-06 | 武汉光谷信息光电子创新中心有限公司 | Avalanche photodetector and preparation method therefor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205542845U (en) * | 2016-01-25 | 2016-08-31 | 武汉光电工业技术研究院有限公司 | Low noise snowslide photoelectric detector |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9076707B2 (en) * | 2013-04-19 | 2015-07-07 | Lightspin Technologies, Inc. | Integrated avalanche photodiode arrays |
| CA2941586C (en) * | 2014-03-10 | 2018-05-22 | Coriant Advanced Technology, LLC | Germanium metal-contact-free near-ir photodetector |
-
2016
- 2016-01-25 CN CN201610047625.2A patent/CN105576072B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205542845U (en) * | 2016-01-25 | 2016-08-31 | 武汉光电工业技术研究院有限公司 | Low noise snowslide photoelectric detector |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105576072A (en) | 2016-05-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105576072B (en) | Low noise avalanche photodetector and preparation method thereof | |
| CN105720130B (en) | Photodetector based on SQW band-to-band transition | |
| Decoster et al. | Optoelectronic sensors | |
| CN107644921B (en) | Novel avalanche diode photoelectric detector and preparation method thereof | |
| CN103022218B (en) | A kind of InAs avalanche photodide and manufacture method thereof | |
| CN104465853A (en) | Avalanche photodiode and manufacturing method thereof | |
| CN103545398A (en) | Base-region-gradient uni-traveling-carrier double-heterojunction phototransistor detector | |
| CN108666382B (en) | SOI-based LSAMBM avalanche photodiode and preparation method thereof | |
| CN104900731A (en) | Infrared photoelectric detector and manufacturing method thereof | |
| CN205542845U (en) | Low noise snowslide photoelectric detector | |
| CN105097964B (en) | A kind of active area Gauss doping type p π n ultraviolet detector | |
| CN104617166A (en) | Si substrate based InGaAs infrared detector and preparation method thereof | |
| Liang et al. | A review on III–V compound semiconductor short wave infrared avalanche photodiodes | |
| JP2017199935A (en) | Planar avalanche photodiode | |
| CN116565040A (en) | Epitaxial structure of high-speed photoelectric detector | |
| Itzler et al. | Manufacturable planar bulk-InP avalanche photodiodes for 10 Gb/s applications | |
| CN115224138B (en) | Horizontal pull-through germanium-silicon avalanche photodetector | |
| CN100541721C (en) | Planar avalanche photodiode | |
| WO2020107784A1 (en) | Unidirectional carrier transport photodetector and manufacturing method therefor | |
| CN107749424B (en) | Avalanche photodiode and preparation method thereof | |
| JP6705762B2 (en) | Avalanche photodiode | |
| JPH11330536A (en) | Semiconductor light receiving element | |
| CN103247675B (en) | Possesses the heterojunction triode of opto-electronic conversion and enlarging function | |
| CN114762131A (en) | Avalanche photodiode | |
| CN110364590A (en) | A kind of optical detector and its manufacturing method of high gain-bandwidth product |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |