JPS55145344A - Mthod for surface profile processing of 3-5 group compound semiconductor - Google Patents

Mthod for surface profile processing of 3-5 group compound semiconductor

Info

Publication number
JPS55145344A
JPS55145344A JP5345079A JP5345079A JPS55145344A JP S55145344 A JPS55145344 A JP S55145344A JP 5345079 A JP5345079 A JP 5345079A JP 5345079 A JP5345079 A JP 5345079A JP S55145344 A JPS55145344 A JP S55145344A
Authority
JP
Japan
Prior art keywords
surface profile
compound semiconductor
profile processing
mthod
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5345079A
Other languages
Japanese (ja)
Other versions
JPS648465B2 (en
Inventor
Toshihiko Kanayama
Toshio Tsurushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP5345079A priority Critical patent/JPS55145344A/en
Publication of JPS55145344A publication Critical patent/JPS55145344A/en
Publication of JPS648465B2 publication Critical patent/JPS648465B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To make a fine surface profile processing available for III-V groupe compound semiconductors by a method wherein the semiconductor is ion-irradiated to obtain an injured portion in desired form and the injured portion is resolved selectively in hydrochloric acid solution. CONSTITUTION:A mask 12 is formed on a substrate 11 of III-V family compound semiconductor. With this mask ion-illuminated 13, a crystal component of the illuminated portion is broken-down so that an injured portion 14 is formed. Then, the mask 12 is removed and the injured portion 14 is resolved selectively through etching process in hydrochloric acid solution.
JP5345079A 1979-05-02 1979-05-02 Mthod for surface profile processing of 3-5 group compound semiconductor Granted JPS55145344A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5345079A JPS55145344A (en) 1979-05-02 1979-05-02 Mthod for surface profile processing of 3-5 group compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5345079A JPS55145344A (en) 1979-05-02 1979-05-02 Mthod for surface profile processing of 3-5 group compound semiconductor

Publications (2)

Publication Number Publication Date
JPS55145344A true JPS55145344A (en) 1980-11-12
JPS648465B2 JPS648465B2 (en) 1989-02-14

Family

ID=12943183

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5345079A Granted JPS55145344A (en) 1979-05-02 1979-05-02 Mthod for surface profile processing of 3-5 group compound semiconductor

Country Status (1)

Country Link
JP (1) JPS55145344A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59213135A (en) * 1983-05-19 1984-12-03 Agency Of Ind Science & Technol Fine processing for semiconductor
JP2011243657A (en) * 2010-05-14 2011-12-01 Mitsumi Electric Co Ltd Semiconductor device manufacturing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915114A (en) * 1972-06-02 1974-02-09
JPS50110284A (en) * 1974-02-06 1975-08-30
JPS513782A (en) * 1974-06-28 1976-01-13 Hitachi Ltd HANDOTA ISHORIHO
JPS5122372A (en) * 1974-08-19 1976-02-23 Matsushita Electric Ind Co Ltd Gaaallas no fushokuhoho

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915114A (en) * 1972-06-02 1974-02-09
JPS50110284A (en) * 1974-02-06 1975-08-30
JPS513782A (en) * 1974-06-28 1976-01-13 Hitachi Ltd HANDOTA ISHORIHO
JPS5122372A (en) * 1974-08-19 1976-02-23 Matsushita Electric Ind Co Ltd Gaaallas no fushokuhoho

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59213135A (en) * 1983-05-19 1984-12-03 Agency Of Ind Science & Technol Fine processing for semiconductor
JPH0155574B2 (en) * 1983-05-19 1989-11-27 Kogyo Gijutsuin
JP2011243657A (en) * 2010-05-14 2011-12-01 Mitsumi Electric Co Ltd Semiconductor device manufacturing method

Also Published As

Publication number Publication date
JPS648465B2 (en) 1989-02-14

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