JPS6430117A - Formation of ceramic superconductor membrane - Google Patents
Formation of ceramic superconductor membraneInfo
- Publication number
- JPS6430117A JPS6430117A JP62185107A JP18510787A JPS6430117A JP S6430117 A JPS6430117 A JP S6430117A JP 62185107 A JP62185107 A JP 62185107A JP 18510787 A JP18510787 A JP 18510787A JP S6430117 A JPS6430117 A JP S6430117A
- Authority
- JP
- Japan
- Prior art keywords
- membrane
- superconductor
- semiconductor substrate
- ceramic superconductor
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
PURPOSE:To make it possible to form a superconductor membrane of an excellent superconductive property on a semiconductor substrate by forming a membrane of an insulating substance whose grid constant is similar to that of a ceramic superconductor on a semiconductor substrate beforehand, over which forming the ceramic superconductor membrane. CONSTITUTION:Since a ceramics superconductor membrane 3 is formed on a membrane 2 of an insulating substance whose grid constant is similar to that of the ceramic superconductor 3, which is formed beforehand on a semiconductor substrate 1, a ceramics superconductor membrane with a good crystal orientation performance and an excellent superconductive property can be obtained. And moreover, in the semiconductor substrate 1 which is an Si substrate or covered with SiO2 membrane, the deterioration of the membranous body resulting from the reaction of the Si and the ceramics superconductor 3 is not generated. Consequently, a ceramic superconductor membrane of an excellent superconductive property can be formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62185107A JPS6430117A (en) | 1987-07-24 | 1987-07-24 | Formation of ceramic superconductor membrane |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62185107A JPS6430117A (en) | 1987-07-24 | 1987-07-24 | Formation of ceramic superconductor membrane |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6430117A true JPS6430117A (en) | 1989-02-01 |
Family
ID=16164978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62185107A Pending JPS6430117A (en) | 1987-07-24 | 1987-07-24 | Formation of ceramic superconductor membrane |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6430117A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6452326A (en) * | 1987-08-21 | 1989-02-28 | Matsushita Electric Ind Co Ltd | Superconductor |
JPH0282585A (en) * | 1988-09-19 | 1990-03-23 | Res Dev Corp Of Japan | Superconducting wiring |
JPH02207415A (en) * | 1989-02-04 | 1990-08-17 | Sumitomo Electric Ind Ltd | Superconducting wire |
JPH02237082A (en) * | 1988-04-30 | 1990-09-19 | Sumitomo Electric Ind Ltd | Semiconductor substrate provided with superconductor thin film and manufacture thereof |
US5084437A (en) * | 1990-02-28 | 1992-01-28 | Westinghouse Electric Corp. | Method for making high-current, ohmic contacts between semiconductors and oxide superconductors |
JPH04282878A (en) * | 1991-03-11 | 1992-10-07 | Sumitomo Electric Ind Ltd | Superconductor element allowing easy integration and production thereof |
JPH0555648A (en) * | 1991-08-26 | 1993-03-05 | Sumitomo Electric Ind Ltd | Superconducting element |
-
1987
- 1987-07-24 JP JP62185107A patent/JPS6430117A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6452326A (en) * | 1987-08-21 | 1989-02-28 | Matsushita Electric Ind Co Ltd | Superconductor |
JPH02237082A (en) * | 1988-04-30 | 1990-09-19 | Sumitomo Electric Ind Ltd | Semiconductor substrate provided with superconductor thin film and manufacture thereof |
JPH0282585A (en) * | 1988-09-19 | 1990-03-23 | Res Dev Corp Of Japan | Superconducting wiring |
JPH02207415A (en) * | 1989-02-04 | 1990-08-17 | Sumitomo Electric Ind Ltd | Superconducting wire |
US5084437A (en) * | 1990-02-28 | 1992-01-28 | Westinghouse Electric Corp. | Method for making high-current, ohmic contacts between semiconductors and oxide superconductors |
JPH04282878A (en) * | 1991-03-11 | 1992-10-07 | Sumitomo Electric Ind Ltd | Superconductor element allowing easy integration and production thereof |
JPH0555648A (en) * | 1991-08-26 | 1993-03-05 | Sumitomo Electric Ind Ltd | Superconducting element |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2106419A (en) | Growth of structures based on group iv semiconductor materials | |
JPS6430117A (en) | Formation of ceramic superconductor membrane | |
JPS52146574A (en) | Semiconductor device | |
JPS57208124A (en) | Manufacture of semiconductor device | |
JPS5544743A (en) | Manufacture of semiconductor device | |
JPS647414A (en) | Superconductive element of oxide type | |
JPS6411378A (en) | Formation of josephson element | |
JPS5687339A (en) | Manufacture of semiconductor device | |
JPS5756942A (en) | Manufacture of silicon semiconductor device | |
JPS6467975A (en) | Semiconductor device and manufacture thereof | |
JPS5210597A (en) | Insulated grain boundary type piezo-electric substance of polycrystall ine ceramic semiconductor | |
GB1142405A (en) | Method of making a semiconductor device having two insulating coatings | |
JPS6435971A (en) | Superconductor device | |
JPS5326663A (en) | Manu facture of semiconductor device | |
JPS5527854A (en) | Production of silicon dioxide thin film | |
JPS6482566A (en) | Field-effect semiconductor device | |
JPS5210596A (en) | Insulated grain boundary type piezo-electric substance of polycrystall ine ceramic semiconductor | |
JPS6450485A (en) | Integrated circuit | |
JPS53147482A (en) | Production of semiconductor device | |
JPS55148440A (en) | Semiconductor device and its manufacture | |
JPS53109489A (en) | Semiconductor pressure convertor | |
JPS5410688A (en) | Production of semiconductor device | |
JPS6452327A (en) | Superconductive material | |
JPS644066A (en) | Manufacture of semiconductor device | |
JPS57201015A (en) | Manufacture of semiconductor device |