JPH04282878A - Superconductor element allowing easy integration and production thereof - Google Patents
Superconductor element allowing easy integration and production thereofInfo
- Publication number
- JPH04282878A JPH04282878A JP3070672A JP7067291A JPH04282878A JP H04282878 A JPH04282878 A JP H04282878A JP 3070672 A JP3070672 A JP 3070672A JP 7067291 A JP7067291 A JP 7067291A JP H04282878 A JPH04282878 A JP H04282878A
- Authority
- JP
- Japan
- Prior art keywords
- superconducting
- oxide
- layer
- thin film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 230000010354 integration Effects 0.000 title description 2
- 239000010409 thin film Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims description 23
- 238000000926 separation method Methods 0.000 claims description 13
- 239000000470 constituent Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052681 coesite Inorganic materials 0.000 abstract description 9
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 9
- 239000000377 silicon dioxide Substances 0.000 abstract description 9
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 9
- 229910052682 stishovite Inorganic materials 0.000 abstract description 9
- 229910052905 tridymite Inorganic materials 0.000 abstract description 9
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 8
- 238000004544 sputter deposition Methods 0.000 abstract description 8
- 229910026161 MgAl2O4 Inorganic materials 0.000 abstract description 5
- 229910052596 spinel Inorganic materials 0.000 abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 229910015901 Bi-Sr-Ca-Cu-O Inorganic materials 0.000 description 1
- 229910002480 Cu-O Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、プレーナ構造の超電導
素子の作製方法に関する。より詳細には、半導体基板上
に形成され、酸化物超電導体が用いられていて、集積化
が容易な構成のプレーナ構造超電導素子の作製方法に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a superconducting element having a planar structure. More specifically, the present invention relates to a method for manufacturing a planar structure superconducting element formed on a semiconductor substrate, using an oxide superconductor, and having a structure that is easy to integrate.
【０００２】0002
【従来の技術】超電導現象を利用した素子は、従来の半
導体素子に比較して高速であり、消費電力も小さく、飛
躍的に高性能化することができると考えられている。特
に近年研究が進んでいる酸化物超電導体を使用すること
により、比較的高い温度で動作する超電導素子を作製す
ることが可能である。超電導素子の中でも、半導体と超
電導体を組み合わせた超電導ベーストランジスタ、超電
導ＦＥＴ等のいわゆる超電導トランジスタは３端子素子
であるため、ジョセフソン素子よりも論理回路が簡単に
構成でき、より実用性が高い。2. Description of the Related Art Elements utilizing superconducting phenomena are faster than conventional semiconductor elements, consume less power, and are thought to be capable of dramatically improving performance. In particular, by using oxide superconductors, which have been studied in recent years, it is possible to fabricate superconducting elements that operate at relatively high temperatures. Among superconducting elements, so-called superconducting transistors such as superconducting base transistors and superconducting FETs, which combine semiconductors and superconductors, are three-terminal elements, so logic circuits can be constructed more easily than Josephson elements, and they are more practical.
【０００３】上記の超電導トランジスタを各種電子装置
に使用する場合には、集積化することが必要となる。そ
のため、素子構造をプレーナ構造とすることが有利であ
る。また、超電導体に酸化物超電導体を使用する場合に
は、半導体基板上に酸化物超電導体の薄膜を形成し、素
子ごとに超電導領域を分離しなければならない。図２お
よび図３に、従来の方法により超電導領域が分離された
酸化物超電導薄膜を示す。図２に示した酸化物超電導薄
膜は、基板３３上に形成された酸化物超電導薄膜の超電
導領域３１として必要な部分をフォトレジスト膜３５で
被覆し、エッチングにより、他の部分を除去したもので
ある。一方、図３に示した酸化物超電導薄膜は、基板４
３上の分離層４２が形成される部分にＳｉＯ２ 等Ｓｉ
を含む物質の層４４を形成してから、酸化物超電導薄膜
４０を成膜して作製した。分離層４２は、酸化物超電導
薄膜４０にＳｉＯ２ 中のＳｉが拡散して超電導性を失
った部分で構成されている。[0003] When the above-mentioned superconducting transistor is used in various electronic devices, it is necessary to integrate it. Therefore, it is advantageous to make the device structure a planar structure. Furthermore, when using an oxide superconductor as a superconductor, a thin film of the oxide superconductor must be formed on a semiconductor substrate, and superconducting regions must be separated for each element. FIGS. 2 and 3 show an oxide superconducting thin film in which superconducting regions have been separated by a conventional method. The oxide superconducting thin film shown in FIG. 2 is obtained by covering the oxide superconducting thin film formed on a substrate 33 with a photoresist film 35 on the part necessary for the superconducting region 31, and removing the other part by etching. be. On the other hand, the oxide superconducting thin film shown in FIG.
3, where the separation layer 42 is formed, SiO2 etc.
The oxide superconducting thin film 40 was formed after forming a layer 44 of a substance containing the following. The separation layer 42 is composed of a portion of the oxide superconducting thin film 40 in which Si in SiO2 has diffused and lost its superconductivity.
【０００４】0004
【発明が解決しようとする課題】上記従来の方法で超電
導領域を分離した場合には、いずれも超電導素子に好ま
しくない影響がある。図２のように、フォトレジストと
エッチングを使用した場合には、サイドエッチ等により
加工精度が低く、微細加工が困難である。また、超電導
領域となる酸化物超電導薄膜の表面がフォトレジストで
汚染されたり、側面がエッチングの際に汚染されたりす
る。酸化物超電導体は、特に水、Ｃｌイオンに触れると
劣化し易いため、酸化物超電導薄膜を直接エッチング加
工する工程がある作製方法では、特性のよい超電導素子
を作製することが難しい。Problems to be Solved by the Invention When superconducting regions are separated using the above-mentioned conventional methods, there is an undesirable effect on the superconducting element. As shown in FIG. 2, when photoresist and etching are used, processing accuracy is low due to side etching, etc., and microfabrication is difficult. Furthermore, the surface of the oxide superconducting thin film, which becomes the superconducting region, is contaminated with photoresist, and the side surfaces are contaminated during etching. Oxide superconductors are particularly susceptible to deterioration when exposed to water or Cl ions, so it is difficult to produce superconducting elements with good characteristics using a production method that includes a step of directly etching an oxide superconducting thin film.
【０００５】一方、図３に示した方法で分離層を形成し
た場合には、酸化物超電導薄膜が劣化することはないが
、酸化物超電導薄膜表面に段差が生じる。超電導素子を
作製するためには、この酸化物超電導薄膜上にさらに各
種の層を積層しなければならないが、このとき、寸法精
度を向上させることができない。そのため、多層化、微
細化が困難である。また、段差部分における耐圧にも問
題が生じる。On the other hand, when the separation layer is formed by the method shown in FIG. 3, the oxide superconducting thin film does not deteriorate, but a step is formed on the surface of the oxide superconducting thin film. In order to produce a superconducting element, various layers must be further laminated on this oxide superconducting thin film, but at this time, dimensional accuracy cannot be improved. Therefore, multilayering and miniaturization are difficult. Further, there is also a problem with the withstand voltage at the step portion.
【０００６】そこで、本発明の目的は、上記従来技術の
問題点を解決したプレーナ構造の超電導素子の作製方法
を提供することにある。SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method for manufacturing a superconducting element having a planar structure, which solves the problems of the prior art described above.
【０００７】[0007]
【課題を解決するための手段】本発明に従うと、半導体
基板上に配置された酸化物超電導体層を具備し、前記酸
化物超電導体層の上面が平坦であり、前記酸化物超電導
体層における超電導領域が、前記酸化物超電導体と等し
い構成元素を含む非超電導酸化物で構成された分離層に
より画成されている超電導素子を作製する方法において
、前記半導体基板の超電導素子の超電導領域が形成され
る部分に酸化物超電導体結晶と格子整合性のよい物質に
よるバッファ層を形成し、前記半導体基板の前記超電導
素子の分離層が形成される部分に該半導体基板を構成す
る半導体の酸化物層を前記バッファ層とほぼ等しい厚さ
に形成した後、酸化物超電導薄膜の成膜を行うことを特
徴とする超電導素子の作製方法が提供される。[Means for Solving the Problems] According to the present invention, an oxide superconductor layer is provided on a semiconductor substrate, the top surface of the oxide superconductor layer is flat, and the top surface of the oxide superconductor layer is flat. In the method for producing a superconducting element, the superconducting region is defined by a separation layer made of a non-superconducting oxide containing the same constituent elements as the oxide superconductor, wherein the superconducting region of the superconducting element of the semiconductor substrate is formed. a buffer layer made of a material having good lattice matching with the oxide superconductor crystal in a portion where the separation layer of the superconducting element is formed, and an oxide layer of a semiconductor constituting the semiconductor substrate in a portion of the semiconductor substrate where the separation layer of the superconducting element is formed. A method for manufacturing a superconducting element is provided, which comprises forming an oxide superconducting thin film to have a thickness substantially equal to that of the buffer layer, and then forming an oxide superconducting thin film.
【０００８】[0008]
【作用】本発明の方法で作製される超電導素子は、半導
体基板上に形成された、例えば超電導電極として機能す
る酸化物超電導体層を具備する。また、この酸化物超電
導体層の上面が平坦で、さらに超電導素子のこの酸化物
超電導体層における領域がこの酸化物超電導体と等しい
構成元素を含む非超電導酸化物で構成された分離層で画
成されているところにその主要な特徴がある。上記の超
電導素子は、酸化物超電導体層の上面が平坦であるので
寸法の精度を高くすることができるので多層構造や、微
細化が容易である。また、酸化物超電導体層に段差がな
いので、耐圧も大きくすることが可能である。[Operation] A superconducting element manufactured by the method of the present invention includes an oxide superconductor layer formed on a semiconductor substrate and functioning as, for example, a superconducting electrode. Further, the upper surface of this oxide superconductor layer is flat, and furthermore, the region of this oxide superconductor layer of the superconducting element is defined by a separation layer made of a non-superconducting oxide containing the same constituent elements as this oxide superconductor. Its main characteristic lies in the way it is constructed. Since the above-mentioned superconducting element has a flat top surface of the oxide superconductor layer, dimensional accuracy can be increased, so that it is easy to form a multilayer structure and to miniaturize the element. Furthermore, since there is no step difference in the oxide superconductor layer, it is possible to increase the breakdown voltage.
【０００９】本発明の方法では、半導体基板上の超電導
素子の超電導領域となる部分に酸化物超電導体結晶と格
子整合性のよい物質によるバッファ層を形成し、上記の
分離層となる部分にこの半導体基板の半導体の酸化物層
を上記のバッファ層とほぼ等しい厚さに形成する。この
バッファ層および半導体酸化物層上に酸化物超電導薄膜
の成膜を行うと、バッファ層上には、結晶性の優れた酸
化物超電導薄膜が成長し、超電導領域となる。一方半導
体酸化物層上の酸化物超電導薄膜中には、半導体酸化物
を構成する原子が拡散して酸化物超電導薄膜の超電導性
が失われ、非超電導体の分離層となる。本発明の方法で
は、酸化物超電導薄膜を直接エッチング等で加工する工
程がないので、酸化物超電導薄膜が汚染されたり、劣化
することがない。In the method of the present invention, a buffer layer made of a material having good lattice matching with the oxide superconductor crystal is formed in a portion of a superconducting element on a semiconductor substrate that will become a superconducting region, and this buffer layer is formed in a portion that will become the separation layer. A semiconductor oxide layer of a semiconductor substrate is formed to have approximately the same thickness as the buffer layer. When an oxide superconducting thin film is formed on the buffer layer and the semiconductor oxide layer, an oxide superconducting thin film with excellent crystallinity grows on the buffer layer, forming a superconducting region. On the other hand, atoms constituting the semiconductor oxide diffuse into the oxide superconducting thin film on the semiconductor oxide layer, causing the oxide superconducting thin film to lose its superconductivity and become a non-superconducting separation layer. In the method of the present invention, since there is no step of directly processing the oxide superconducting thin film by etching or the like, the oxide superconducting thin film is not contaminated or deteriorated.
【００１０】本発明の方法では、ＣＶＤ法で成膜したＭ
ｇＡｌ２Ｏ４膜上にスパッタリング法で成膜したＢａＴ
ｉＯ３ 膜を積層した積層構造の膜等を上記バッファ層
として使用することが好ましい。また、本発明の超電導
素子の半導体基板には、Ｓｉの他、ＧａＡｓ、ＩｎＰ、
ＩｎＧａＡｓ、ＩｎＧａＡｓＰ等の化合物半導体も使用
することができる。本発明は、任意の酸化物超電導体に
適用することが可能であるが、特にＹ−Ｂａ−Ｃｕ−Ｏ
系酸化物超電導体、Ｂｉ−Ｓｒ−Ｃａ−Ｃｕ−Ｏ系酸化
物超電導体、Ｔｌ−Ｂａ−Ｃａ−Ｃｕ−Ｏ系酸化物超電
導体に適用することが好ましい。これらの酸化物超電導
体は、臨界温度を始めとする各種の超電導特性が現在の
ところ最も優れているからである。[0010] In the method of the present invention, the M film formed by the CVD method is
gBaT deposited on Al2O4 film by sputtering method
It is preferable to use a film having a laminated structure in which iO3 films are laminated as the buffer layer. In addition to Si, the semiconductor substrate of the superconducting element of the present invention may include GaAs, InP,
Compound semiconductors such as InGaAs and InGaAsP can also be used. The present invention can be applied to any oxide superconductor, but is particularly applicable to Y-Ba-Cu-O
It is preferable to apply the present invention to a Bi-Sr-Ca-Cu-O-based oxide superconductor, a Tl-Ba-Ca-Cu-O-based oxide superconductor. This is because these oxide superconductors are currently the best in various superconducting properties including critical temperature.
【００１１】以下、本発明を実施例によりさらに詳しく
説明するが、以下の開示は本発明の単なる実施例に過ぎ
ず、本発明の技術的範囲をなんら制限するものではない
。[0011] Hereinafter, the present invention will be explained in more detail with reference to examples, but the following disclosure is merely an example of the present invention and is not intended to limit the technical scope of the present invention in any way.
【００１２】0012
【実施例】上記の超電導素子を本発明の方法により作製
した。半導体基板にはＳｉ基板を使用して、酸化物超電
導体にはＹ１Ｂａ２Ｃｕ３Ｏ７−Ｘ酸化物超電導体を使
用した。図１を参照して、本発明の方法で本発明の超電
導素子を作製する手順を説明する。まず、図１（ａ）に
示すようなＳｉ基板３の表面に、図１（ｂ）に示すよう
厚さ ３５０ｎｍのＭｇＡｌ２Ｏ４膜２１をＣＶＤ法で
成膜し、その上に厚さ７５ｎｍのＢａＴｉＯ３ 膜２２
をスパッタリング法で成膜する。次に図１（ｃ）に示す
ようこの積層膜によるバッファ層の超電導素子形成部上
にフォトレジスト膜５を形成し、図１（ｄ）に示すよう
Ａｒイオンミリング、反応性イオンエッチング等の方法
を使用して、ＭｇＡｌ２Ｏ４膜２１およびＢａＴｉＯ３
膜２２のフォトレジスト５に被われていない部分を除
去する。Ｓｉ基板３の一部も引き続いてエッチングして
もよい。Ｓｉ基板３の露出した部分を水蒸気酸化して、
図１（ｅ）に示すようＳｉＯ２ 層４を形成する。この
ＳｉＯ２ 層４の厚さはＭｇＡｌ２Ｏ４膜２１およびＢ
ａＴｉＯ３ 膜２２による積層構造のバッファ層と段差
が生じないような厚さに形成する。このため、必要に応
じ、上述のＳｉ基板３のエッチング量を調整し、ＳｉＯ
２ 層４と、ＭｇＡｌ２Ｏ４膜２１およびＢａＴｉＯ３
膜２２による積層構造のバッファ層との間で段差が生
じないようにする。
次いで、図２（ｆ）に示すようフォトレジスト膜５をリ
フトオフして除去してＢａＴｉＯ３ 膜２２を露出させ
、プレスパッタリング等によりＢａＴｉＯ３ 膜２２の
表面を清浄にする。
ＢａＴｉＯ３ 膜２２が露出したら、図２（ｇ）に示す
ようＹ１Ｂａ２Ｃｕ３Ｏ７−Ｘ酸化物超電導薄膜１０を
オフアクシススパッタリング法、反応性蒸着法、ＭＢＥ
法、ＣＶＤ法等の方法で成膜する。オフアクシススパッ
タリング法で酸化物超電導薄膜を成膜する場合の成膜条
件を以下に示す。
このとき、酸化物超電導薄膜１０のＢａＴｉＯ３
膜２２上の部分には、ｃ軸配向の結晶性のよい酸化物超
電導体による超電導領域１１が形成される。酸化物超電
導薄膜１０のＳｉＯ２ 層４上の部分には、ＳｉＯ２
層４からＳｉが拡散し、非超電導体の分離層１１となる
。EXAMPLE The above superconducting device was manufactured by the method of the present invention. A Si substrate was used as the semiconductor substrate, and a Y1Ba2Cu3O7-X oxide superconductor was used as the oxide superconductor. Referring to FIG. 1, the procedure for manufacturing the superconducting element of the present invention using the method of the present invention will be described. First, a 350 nm thick MgAl2O4 film 21 as shown in FIG. 1(b) is formed on the surface of a Si substrate 3 as shown in FIG. 22
A film is formed using a sputtering method. Next, as shown in FIG. 1(c), a photoresist film 5 is formed on the superconducting element formation portion of the buffer layer made of this laminated film, and as shown in FIG. 1(d), a method such as Ar ion milling or reactive ion etching is applied. using MgAl2O4 film 21 and BaTiO3
The portion of the film 22 that is not covered by the photoresist 5 is removed. A portion of the Si substrate 3 may also be subsequently etched. The exposed portion of the Si substrate 3 is oxidized with steam,
A SiO2 layer 4 is formed as shown in FIG. 1(e). The thickness of this SiO2 layer 4 is the same as that of the MgAl2O4 film 21 and B
The aTiO3 film 22 is formed to a thickness that does not create a difference in level from the buffer layer having a laminated structure. Therefore, if necessary, the etching amount of the Si substrate 3 described above is adjusted, and the SiO
2 layer 4, MgAl2O4 film 21 and BaTiO3
A difference in level between the film 22 and the buffer layer of the laminated structure is prevented from occurring. Next, as shown in FIG. 2(f), the photoresist film 5 is lifted off and removed to expose the BaTiO3 film 22, and the surface of the BaTiO3 film 22 is cleaned by pre-sputtering or the like. Once the BaTiO3 film 22 is exposed, the Y1Ba2Cu3O7-X oxide superconducting thin film 10 is deposited by off-axis sputtering, reactive vapor deposition, or MBE as shown in FIG. 2(g).
The film is formed by a method such as a method or a CVD method. The film forming conditions for forming an oxide superconducting thin film by off-axis sputtering method are shown below. At this time, BaTiO3 of the oxide superconducting thin film 10
A superconducting region 11 made of a c-axis oriented oxide superconductor with good crystallinity is formed on the film 22 . The portion of the oxide superconducting thin film 10 on the SiO2 layer 4 has SiO2
Si diffuses from the layer 4 and becomes a non-superconducting separation layer 11.
【００１５】本発明の方法では、上記のように、酸化物
超電導薄膜に対し直接エッチング等の加工を行うことな
く、超電導素子を作製することが可能である。複数の超
電導素子も、本発明の方法で全く同様に作製することが
可能である。本実施例では、半導体基板を酸化して形成
した酸化膜を使用して超電導素子の分離層を形成したが
、本発明の方法はこれに限定されるものではない。例え
ば、ＣＶＤ法、スパッタリング法等で半導体基板上に形
成した、同種または異種半導体の酸化膜、多結晶膜等を
使用することも可能である。[0015] According to the method of the present invention, as described above, it is possible to fabricate a superconducting element without directly performing processing such as etching on an oxide superconducting thin film. A plurality of superconducting elements can also be produced in exactly the same way using the method of the present invention. In this example, the separation layer of the superconducting element was formed using an oxide film formed by oxidizing a semiconductor substrate, but the method of the present invention is not limited thereto. For example, it is also possible to use an oxide film, a polycrystalline film, etc. of the same or different semiconductors formed on a semiconductor substrate by a CVD method, a sputtering method, or the like.
【００１６】[0016]
【発明の効果】以上説明したように、本発明に従えば、
多層化、集積化に適した構成の超電導素子の作製方法が
提供される。本発明の方法により作製される超電導素子
は、超電導特性も優れている。本発明を超電導素子、超
電導集積回路の作製に応用することにより、従来得られ
なかった高性能な超電導装置が作製可能である。[Effects of the Invention] As explained above, according to the present invention,
A method for manufacturing a superconducting element having a configuration suitable for multilayering and integration is provided. The superconducting element produced by the method of the present invention also has excellent superconducting properties. By applying the present invention to the production of superconducting elements and superconducting integrated circuits, it is possible to produce high-performance superconducting devices that have not been previously available.
【図１】本発明の方法で超電導素子を作製する工程を説
明する図である。FIG. 1 is a diagram illustrating the process of manufacturing a superconducting element by the method of the present invention.
【図２】従来の方法により超電導領域が分離された酸化
物超電導薄膜の概略断面図である。FIG. 2 is a schematic cross-sectional view of an oxide superconducting thin film from which superconducting regions have been separated by a conventional method.
【図３】異なる従来の方法により超電導領域が分離され
た酸化物超電導薄膜の概略断面図である。FIG. 3 is a schematic cross-sectional view of an oxide superconducting thin film with superconducting regions separated by different conventional methods.
１ 超電導領域 ３ 基板 ４ ＳｉＯ２ 層 ５ フォトレジスト １０ 酸化物超電導薄膜 1 Superconducting region 3 Substrate 4 SiO2 layer 5 Photoresist 10 Oxide superconducting thin film
Claims (1)
導体層を具備し、前記酸化物超電導体層の上面が平坦で
あり、前記酸化物超電導体層における超電導領域が、前
記酸化物超電導体と等しい構成元素を含む非超電導酸化
物で構成された分離層により画成されている超電導素子
を作製する方法において、前記半導体基板の超電導素子
の超電導領域が形成される部分に酸化物超電導体結晶と
格子整合性のよい物質によるバッファ層を形成し、前記
半導体基板の前記超電導素子の分離層が形成される部分
に該半導体基板を構成する半導体の酸化物層を前記バッ
ファ層とほぼ等しい厚さに形成した後、酸化物超電導薄
膜の成膜を行うことを特徴とする超電導素子の作製方法
。1. An oxide superconductor layer disposed on a semiconductor substrate, wherein the top surface of the oxide superconductor layer is flat, and a superconducting region in the oxide superconductor layer is formed by the oxide superconductor layer. In the method for manufacturing a superconducting device defined by a separation layer made of a non-superconducting oxide containing constituent elements equal to a buffer layer made of a material having good lattice matching with the semiconductor substrate, and an oxide layer of a semiconductor constituting the semiconductor substrate at a portion of the semiconductor substrate where the separation layer of the superconducting element is formed to a thickness substantially equal to that of the buffer layer. 1. A method for producing a superconducting element, which comprises forming an oxide superconducting thin film after forming an oxide superconducting thin film.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3070672A JPH04282878A (en) | 1991-03-11 | 1991-03-11 | Superconductor element allowing easy integration and production thereof |
| CA002062709A CA2062709C (en) | 1991-03-11 | 1992-03-11 | Superconducting thin film having at least one isolated superconducting region formed of oxide superconductor material and method for manufacturing the same |
| EP92400633A EP0508844B1 (en) | 1991-03-11 | 1992-03-11 | Superconducting thin film having at least one isolated superconducting region formed of oxide superconductor material and method for manufacturing the same |
| DE69219816T DE69219816T2 (en) | 1991-03-11 | 1992-03-11 | Superconducting thin film with at least one isolated region, formed from oxide superconducting material and process for its production |
| US08/479,853 US5571777A (en) | 1991-03-11 | 1995-06-07 | Superconducting thin film having at least one isolated superconducting region formed of oxide superconductor material and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3070672A JPH04282878A (en) | 1991-03-11 | 1991-03-11 | Superconductor element allowing easy integration and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04282878A true JPH04282878A (en) | 1992-10-07 |
Family
ID=13438388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3070672A Pending JPH04282878A (en) | 1991-03-11 | 1991-03-11 | Superconductor element allowing easy integration and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04282878A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51113471A (en) * | 1975-03-31 | 1976-10-06 | Nec Corp | The manufacturing method of flat-shaped field-effect transistor |
| JPS5362983A (en) * | 1976-11-17 | 1978-06-05 | Matsushita Electric Ind Co Ltd | Formation method of selective oxide regions |
| JPS62296537A (en) * | 1986-06-17 | 1987-12-23 | Nec Corp | Manufacture of selective oxide film |
| JPS6430117A (en) * | 1987-07-24 | 1989-02-01 | Furukawa Electric Co Ltd | Formation of ceramic superconductor membrane |
| JPH01161731A (en) * | 1987-12-18 | 1989-06-26 | Toshiba Corp | Superconducting wiring and forming method thereof |
| JPH01226183A (en) * | 1988-03-07 | 1989-09-08 | Sharp Corp | Manufacture of ceramic superconductor |
-
1991
- 1991-03-11 JP JP3070672A patent/JPH04282878A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51113471A (en) * | 1975-03-31 | 1976-10-06 | Nec Corp | The manufacturing method of flat-shaped field-effect transistor |
| JPS5362983A (en) * | 1976-11-17 | 1978-06-05 | Matsushita Electric Ind Co Ltd | Formation method of selective oxide regions |
| JPS62296537A (en) * | 1986-06-17 | 1987-12-23 | Nec Corp | Manufacture of selective oxide film |
| JPS6430117A (en) * | 1987-07-24 | 1989-02-01 | Furukawa Electric Co Ltd | Formation of ceramic superconductor membrane |
| JPH01161731A (en) * | 1987-12-18 | 1989-06-26 | Toshiba Corp | Superconducting wiring and forming method thereof |
| JPH01226183A (en) * | 1988-03-07 | 1989-09-08 | Sharp Corp | Manufacture of ceramic superconductor |
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