JPS57126182A - Superconductor element - Google Patents
Superconductor elementInfo
- Publication number
- JPS57126182A JPS57126182A JP56011823A JP1182381A JPS57126182A JP S57126182 A JPS57126182 A JP S57126182A JP 56011823 A JP56011823 A JP 56011823A JP 1182381 A JP1182381 A JP 1182381A JP S57126182 A JPS57126182 A JP S57126182A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- superconductor
- window
- region
- over
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
PURPOSE:To obtain an element which is stable for a long time by a method wherein on an insulative substrate, a polycrystalline oxide superconductor layer consisting of BaPbBiO is applied and covered with an insulation layer, and a window in corespondence with a current squeezing region is bored, and a superconductor layer of the same kind of the upper layer which comes in contact with the super conductor layer through the window is provided all over the surface. CONSTITUTION:On an insulative substrate 31 consisting of sapphire or the like a polycrystalline oxide superconductor layer 32 of BaPb0.75Bi0.25O3 is attached and it is covered all over its surface with an insulating layer 34 such as Al2O3 or Si2O2 or the like. Next, a window 33 is bored at the center on the insulating layer 34, a region of the super conductor layer 32 is exposed, and contacted with it polycrystalline oxide superconductor layer 35 of the same kind is formed on the insulating layer 34. Subsequently an insulating layer 41 is applied all over it, and a superconductor layer 42 for control is attached on the layer 41 in corespondence with the layer 37 in the superconductor layer 35 placed within the window 33. By this method by using a region of the layer 37 as a current squeezing region 40, a superconductor without thermal strain is obtained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56011823A JPS57126182A (en) | 1981-01-28 | 1981-01-28 | Superconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56011823A JPS57126182A (en) | 1981-01-28 | 1981-01-28 | Superconductor element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57126182A true JPS57126182A (en) | 1982-08-05 |
JPS6256673B2 JPS6256673B2 (en) | 1987-11-26 |
Family
ID=11788489
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56011823A Granted JPS57126182A (en) | 1981-01-28 | 1981-01-28 | Superconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57126182A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63220545A (en) * | 1987-03-09 | 1988-09-13 | Semiconductor Energy Lab Co Ltd | Manufacture of superconducting semiconductor device |
JPS63220544A (en) * | 1987-03-09 | 1988-09-13 | Semiconductor Energy Lab Co Ltd | Superconducting semiconductor device |
JPS63220546A (en) * | 1987-11-09 | 1988-09-13 | Semiconductor Energy Lab Co Ltd | Manufacture of superconducting device |
JPS63283175A (en) * | 1987-05-15 | 1988-11-21 | Rikagaku Kenkyusho | Tunnel type josephson-junction device |
-
1981
- 1981-01-28 JP JP56011823A patent/JPS57126182A/en active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63220545A (en) * | 1987-03-09 | 1988-09-13 | Semiconductor Energy Lab Co Ltd | Manufacture of superconducting semiconductor device |
JPS63220544A (en) * | 1987-03-09 | 1988-09-13 | Semiconductor Energy Lab Co Ltd | Superconducting semiconductor device |
JPS63283175A (en) * | 1987-05-15 | 1988-11-21 | Rikagaku Kenkyusho | Tunnel type josephson-junction device |
JPH0565070B2 (en) * | 1987-05-15 | 1993-09-16 | Rikagaku Kenkyusho | |
JPS63220546A (en) * | 1987-11-09 | 1988-09-13 | Semiconductor Energy Lab Co Ltd | Manufacture of superconducting device |
Also Published As
Publication number | Publication date |
---|---|
JPS6256673B2 (en) | 1987-11-26 |
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