JPS51120679A - Semiconductive non-volatile memory element - Google Patents

Semiconductive non-volatile memory element

Info

Publication number
JPS51120679A
JPS51120679A JP4532575A JP4532575A JPS51120679A JP S51120679 A JPS51120679 A JP S51120679A JP 4532575 A JP4532575 A JP 4532575A JP 4532575 A JP4532575 A JP 4532575A JP S51120679 A JPS51120679 A JP S51120679A
Authority
JP
Japan
Prior art keywords
volatile memory
memory element
bonding
semiconductive
floating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4532575A
Other languages
Japanese (ja)
Other versions
JPS5749148B2 (en
Inventor
Yutaka Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP4532575A priority Critical patent/JPS51120679A/en
Publication of JPS51120679A publication Critical patent/JPS51120679A/en
Publication of JPS5749148B2 publication Critical patent/JPS5749148B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Abstract

PURPOSE:It is a purpose of the invention to provide a semiconductive nonvolatile memory element. In the floating-gate type non-volatile memory with a control-electrode, the bonding between the control-region and floating-gate is made through the thermal-oxidation film on a single crystal, thus obtaining an increased bonding-efficiency and improved control over the withstand voltage and bonding-efficiency.
JP4532575A 1975-04-16 1975-04-16 Semiconductive non-volatile memory element Granted JPS51120679A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4532575A JPS51120679A (en) 1975-04-16 1975-04-16 Semiconductive non-volatile memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4532575A JPS51120679A (en) 1975-04-16 1975-04-16 Semiconductive non-volatile memory element

Publications (2)

Publication Number Publication Date
JPS51120679A true JPS51120679A (en) 1976-10-22
JPS5749148B2 JPS5749148B2 (en) 1982-10-20

Family

ID=12716147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4532575A Granted JPS51120679A (en) 1975-04-16 1975-04-16 Semiconductive non-volatile memory element

Country Status (1)

Country Link
JP (1) JPS51120679A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53135286A (en) * 1977-04-30 1978-11-25 Toshiba Corp Non-volatile memory element
JPS5466088A (en) * 1976-10-20 1979-05-28 Texas Instruments Inc Semiconductor memory cell
EP0044384A2 (en) * 1980-06-30 1982-01-27 International Business Machines Corporation Electrically alterable read only memory cell
JPH0653521A (en) * 1993-05-19 1994-02-25 Toshiba Corp Non-volatile semiconductor memory device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50155177A (en) * 1974-06-03 1975-12-15
JPS5124186A (en) * 1974-08-23 1976-02-26 Kogyo Gijutsuin FUKIHATSUSEI HANDOTAIMEMORIOYOBISONO SEIHO
JPS5197345A (en) * 1975-01-17 1976-08-26

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50155177A (en) * 1974-06-03 1975-12-15
JPS5124186A (en) * 1974-08-23 1976-02-26 Kogyo Gijutsuin FUKIHATSUSEI HANDOTAIMEMORIOYOBISONO SEIHO
JPS5197345A (en) * 1975-01-17 1976-08-26

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5466088A (en) * 1976-10-20 1979-05-28 Texas Instruments Inc Semiconductor memory cell
JPS53135286A (en) * 1977-04-30 1978-11-25 Toshiba Corp Non-volatile memory element
JPS5931990B2 (en) * 1977-04-30 1984-08-06 株式会社東芝 non-volatile memory element
EP0044384A2 (en) * 1980-06-30 1982-01-27 International Business Machines Corporation Electrically alterable read only memory cell
JPH0653521A (en) * 1993-05-19 1994-02-25 Toshiba Corp Non-volatile semiconductor memory device

Also Published As

Publication number Publication date
JPS5749148B2 (en) 1982-10-20

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