JPS5386179A - Memory element - Google Patents

Memory element

Info

Publication number
JPS5386179A
JPS5386179A JP126177A JP126177A JPS5386179A JP S5386179 A JPS5386179 A JP S5386179A JP 126177 A JP126177 A JP 126177A JP 126177 A JP126177 A JP 126177A JP S5386179 A JPS5386179 A JP S5386179A
Authority
JP
Japan
Prior art keywords
memory element
writeerase
voltages
memory device
volatile memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP126177A
Other languages
Japanese (ja)
Inventor
Terutoshi Sasami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP126177A priority Critical patent/JPS5386179A/en
Publication of JPS5386179A publication Critical patent/JPS5386179A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/32—Optical coupling means having lens focusing means positioned between opposed fibre ends
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain a non-volatile memory device of short call time and low writeerase voltages by providing a third N type layer right under gate by extending floating gate and using said layer.
JP126177A 1977-01-06 1977-01-06 Memory element Pending JPS5386179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP126177A JPS5386179A (en) 1977-01-06 1977-01-06 Memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP126177A JPS5386179A (en) 1977-01-06 1977-01-06 Memory element

Publications (1)

Publication Number Publication Date
JPS5386179A true JPS5386179A (en) 1978-07-29

Family

ID=11496502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP126177A Pending JPS5386179A (en) 1977-01-06 1977-01-06 Memory element

Country Status (1)

Country Link
JP (1) JPS5386179A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07288291A (en) * 1994-04-19 1995-10-31 Nec Corp Non-volatile semiconductor memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07288291A (en) * 1994-04-19 1995-10-31 Nec Corp Non-volatile semiconductor memory device

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