JPS5360182A - Non-volatile memory transistor - Google Patents

Non-volatile memory transistor

Info

Publication number
JPS5360182A
JPS5360182A JP13556076A JP13556076A JPS5360182A JP S5360182 A JPS5360182 A JP S5360182A JP 13556076 A JP13556076 A JP 13556076A JP 13556076 A JP13556076 A JP 13556076A JP S5360182 A JPS5360182 A JP S5360182A
Authority
JP
Japan
Prior art keywords
volatile memory
memory transistor
memory
potential
memory action
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13556076A
Other languages
Japanese (ja)
Inventor
Takashi Shimada
Kenichi Inoue
Koji Otsu
Hidenobu Mochizuki
Jiro Yamaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP13556076A priority Critical patent/JPS5360182A/en
Publication of JPS5360182A publication Critical patent/JPS5360182A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To avert the degradation of memory effect owing to electrical fatigue by providing a first gate which performs memory action when a write potential is applied between source and drain, and right and left symmetrical second gates which are applied with a read potential and have no memory action.
JP13556076A 1976-11-11 1976-11-11 Non-volatile memory transistor Pending JPS5360182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13556076A JPS5360182A (en) 1976-11-11 1976-11-11 Non-volatile memory transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13556076A JPS5360182A (en) 1976-11-11 1976-11-11 Non-volatile memory transistor

Publications (1)

Publication Number Publication Date
JPS5360182A true JPS5360182A (en) 1978-05-30

Family

ID=15154655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13556076A Pending JPS5360182A (en) 1976-11-11 1976-11-11 Non-volatile memory transistor

Country Status (1)

Country Link
JP (1) JPS5360182A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5530845A (en) * 1978-08-28 1980-03-04 Hitachi Ltd Method for manufacturing fixed memory
JPS55138278A (en) * 1979-04-11 1980-10-28 Hitachi Ltd Semiconducor non-volatile memory

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5530845A (en) * 1978-08-28 1980-03-04 Hitachi Ltd Method for manufacturing fixed memory
JPS55138278A (en) * 1979-04-11 1980-10-28 Hitachi Ltd Semiconducor non-volatile memory
JPS5729861B2 (en) * 1979-04-11 1982-06-25

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