NL7710034A - MIS-FIELD EFFECT TRANSISTOR WITH AN N-CHANNEL MANUFACTURED ACCORDING TO ESFI TECHNOLOGY. - Google Patents

MIS-FIELD EFFECT TRANSISTOR WITH AN N-CHANNEL MANUFACTURED ACCORDING TO ESFI TECHNOLOGY.

Info

Publication number
NL7710034A
NL7710034A NL7710034A NL7710034A NL7710034A NL 7710034 A NL7710034 A NL 7710034A NL 7710034 A NL7710034 A NL 7710034A NL 7710034 A NL7710034 A NL 7710034A NL 7710034 A NL7710034 A NL 7710034A
Authority
NL
Netherlands
Prior art keywords
esfi
mis
technology
field effect
effect transistor
Prior art date
Application number
NL7710034A
Other languages
Dutch (nl)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of NL7710034A publication Critical patent/NL7710034A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
NL7710034A 1976-09-14 1977-09-13 MIS-FIELD EFFECT TRANSISTOR WITH AN N-CHANNEL MANUFACTURED ACCORDING TO ESFI TECHNOLOGY. NL7710034A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762641302 DE2641302A1 (en) 1976-09-14 1976-09-14 N-CHANNEL MIS-FET IN ESFI TECHNOLOGY

Publications (1)

Publication Number Publication Date
NL7710034A true NL7710034A (en) 1978-03-16

Family

ID=5987864

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7710034A NL7710034A (en) 1976-09-14 1977-09-13 MIS-FIELD EFFECT TRANSISTOR WITH AN N-CHANNEL MANUFACTURED ACCORDING TO ESFI TECHNOLOGY.

Country Status (7)

Country Link
JP (1) JPS5336186A (en)
BE (1) BE858694A (en)
DE (1) DE2641302A1 (en)
FR (1) FR2364542A1 (en)
GB (1) GB1543132A (en)
IT (1) IT1084222B (en)
NL (1) NL7710034A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5820296B2 (en) * 1979-02-16 1983-04-22 日本化成株式会社 Gas-liquid contact device
US4797721A (en) * 1987-04-13 1989-01-10 General Electric Company Radiation hardened semiconductor device and method of making the same
NL8701251A (en) * 1987-05-26 1988-12-16 Philips Nv SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
US5238857A (en) * 1989-05-20 1993-08-24 Fujitsu Limited Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure
JP2782781B2 (en) * 1989-05-20 1998-08-06 富士通株式会社 Method for manufacturing semiconductor device
GB2358079B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Thin-film transistor
GB2358080B (en) * 2000-01-07 2004-06-02 Seiko Epson Corp Method of manufacturing a thin-film transistor

Also Published As

Publication number Publication date
FR2364542A1 (en) 1978-04-07
BE858694A (en) 1978-01-02
IT1084222B (en) 1985-05-25
DE2641302A1 (en) 1978-03-16
GB1543132A (en) 1979-03-28
JPS5336186A (en) 1978-04-04

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Legal Events

Date Code Title Description
BV The patent application has lapsed