BE858694A - N-CHANNEL MIS-FET TRANSISTOR MADE FOLLOWING ESFI TECHNIQUE - Google Patents

N-CHANNEL MIS-FET TRANSISTOR MADE FOLLOWING ESFI TECHNIQUE

Info

Publication number
BE858694A
BE858694A BE180905A BE180905A BE858694A BE 858694 A BE858694 A BE 858694A BE 180905 A BE180905 A BE 180905A BE 180905 A BE180905 A BE 180905A BE 858694 A BE858694 A BE 858694A
Authority
BE
Belgium
Prior art keywords
esfi
technique
fet transistor
made following
channel mis
Prior art date
Application number
BE180905A
Other languages
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE858694A publication Critical patent/BE858694A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652Through-implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
BE180905A 1976-09-14 1977-09-14 N-CHANNEL MIS-FET TRANSISTOR MADE FOLLOWING ESFI TECHNIQUE BE858694A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762641302 DE2641302A1 (en) 1976-09-14 1976-09-14 N-CHANNEL MIS-FET IN ESFI TECHNOLOGY

Publications (1)

Publication Number Publication Date
BE858694A true BE858694A (en) 1978-01-02

Family

ID=5987864

Family Applications (1)

Application Number Title Priority Date Filing Date
BE180905A BE858694A (en) 1976-09-14 1977-09-14 N-CHANNEL MIS-FET TRANSISTOR MADE FOLLOWING ESFI TECHNIQUE

Country Status (7)

Country Link
JP (1) JPS5336186A (en)
BE (1) BE858694A (en)
DE (1) DE2641302A1 (en)
FR (1) FR2364542A1 (en)
GB (1) GB1543132A (en)
IT (1) IT1084222B (en)
NL (1) NL7710034A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5820296B2 (en) * 1979-02-16 1983-04-22 日本化成株式会社 Gas-liquid contact device
US4797721A (en) * 1987-04-13 1989-01-10 General Electric Company Radiation hardened semiconductor device and method of making the same
NL8701251A (en) * 1987-05-26 1988-12-16 Philips Nv SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
JP2782781B2 (en) * 1989-05-20 1998-08-06 富士通株式会社 Method for manufacturing semiconductor device
US5238857A (en) * 1989-05-20 1993-08-24 Fujitsu Limited Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure
GB2358080B (en) 2000-01-07 2004-06-02 Seiko Epson Corp Method of manufacturing a thin-film transistor
GB2358079B (en) 2000-01-07 2004-02-18 Seiko Epson Corp Thin-film transistor

Also Published As

Publication number Publication date
IT1084222B (en) 1985-05-25
GB1543132A (en) 1979-03-28
FR2364542A1 (en) 1978-04-07
JPS5336186A (en) 1978-04-04
DE2641302A1 (en) 1978-03-16
NL7710034A (en) 1978-03-16

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