JPS5530845A - Method for manufacturing fixed memory - Google Patents
Method for manufacturing fixed memoryInfo
- Publication number
- JPS5530845A JPS5530845A JP10394578A JP10394578A JPS5530845A JP S5530845 A JPS5530845 A JP S5530845A JP 10394578 A JP10394578 A JP 10394578A JP 10394578 A JP10394578 A JP 10394578A JP S5530845 A JPS5530845 A JP S5530845A
- Authority
- JP
- Japan
- Prior art keywords
- film
- multicristal
- sio2 film
- basic plate
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 14
- 229910052681 coesite Inorganic materials 0.000 abstract 7
- 229910052906 cristobalite Inorganic materials 0.000 abstract 7
- 239000000377 silicon dioxide Substances 0.000 abstract 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract 7
- 229910052682 stishovite Inorganic materials 0.000 abstract 7
- 229910052905 tridymite Inorganic materials 0.000 abstract 7
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To simplize procedure and reduce area of memory cell by cutting off gate film photo etching procedure to smallize mask set room, in the production of MNOS non-volatile memory of Si gate. CONSTITUTION:SiO2 film 20 is formed on a Si basic plate 18 and first multicristal Si film 19 is selectively formed thereon and after taking off SiO2 film part esposed as mask, thin SiO2 film 21 is formed on the surface of the basic plate and thick SiO2 film 22 is formed on the surface of the first multicristal film by oxidation treatment. Then the thin SiO2 film 21 is taken off and at the same time a part of thick SiO2 film 22 is also taken off and after forming thin SiO2 film 23 which charge tunnel is possible on the surface of the basic plate, Si3N4 film 24 is formed on whole surface and second multicristal Si film 25 is formed adjacent to the first multicristal film 19. Whereby memory cell of 2 element/1 bit construction is formed in small area.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10394578A JPS5530845A (en) | 1978-08-28 | 1978-08-28 | Method for manufacturing fixed memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10394578A JPS5530845A (en) | 1978-08-28 | 1978-08-28 | Method for manufacturing fixed memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5530845A true JPS5530845A (en) | 1980-03-04 |
JPS647511B2 JPS647511B2 (en) | 1989-02-09 |
Family
ID=14367570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10394578A Granted JPS5530845A (en) | 1978-08-28 | 1978-08-28 | Method for manufacturing fixed memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5530845A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60121772A (en) * | 1983-12-05 | 1985-06-29 | Mitsubishi Electric Corp | Nonvolatile semiconductor memory device |
JPS6164153A (en) * | 1984-09-05 | 1986-04-02 | Nec Corp | Semiconductor memory storage and manufacture thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05185440A (en) * | 1991-12-12 | 1993-07-27 | Matsushita Refrig Co Ltd | Apparatus for producing open-cell rigid urethane foam and method for producing heat insulating object |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5360182A (en) * | 1976-11-11 | 1978-05-30 | Sony Corp | Non-volatile memory transistor |
JPS54105979A (en) * | 1978-02-07 | 1979-08-20 | Sony Corp | Semiconductor device |
-
1978
- 1978-08-28 JP JP10394578A patent/JPS5530845A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5360182A (en) * | 1976-11-11 | 1978-05-30 | Sony Corp | Non-volatile memory transistor |
JPS54105979A (en) * | 1978-02-07 | 1979-08-20 | Sony Corp | Semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60121772A (en) * | 1983-12-05 | 1985-06-29 | Mitsubishi Electric Corp | Nonvolatile semiconductor memory device |
JPS6164153A (en) * | 1984-09-05 | 1986-04-02 | Nec Corp | Semiconductor memory storage and manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS647511B2 (en) | 1989-02-09 |
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