JPS5530845A - Method for manufacturing fixed memory - Google Patents

Method for manufacturing fixed memory

Info

Publication number
JPS5530845A
JPS5530845A JP10394578A JP10394578A JPS5530845A JP S5530845 A JPS5530845 A JP S5530845A JP 10394578 A JP10394578 A JP 10394578A JP 10394578 A JP10394578 A JP 10394578A JP S5530845 A JPS5530845 A JP S5530845A
Authority
JP
Japan
Prior art keywords
film
multicristal
sio2 film
basic plate
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10394578A
Other languages
Japanese (ja)
Other versions
JPS647511B2 (en
Inventor
Yuji Tanida
Takaaki Hagiwara
Hideo Sunami
Yokichi Ito
Ryuji Kondo
Shinichi Minami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10394578A priority Critical patent/JPS5530845A/en
Publication of JPS5530845A publication Critical patent/JPS5530845A/en
Publication of JPS647511B2 publication Critical patent/JPS647511B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To simplize procedure and reduce area of memory cell by cutting off gate film photo etching procedure to smallize mask set room, in the production of MNOS non-volatile memory of Si gate. CONSTITUTION:SiO2 film 20 is formed on a Si basic plate 18 and first multicristal Si film 19 is selectively formed thereon and after taking off SiO2 film part esposed as mask, thin SiO2 film 21 is formed on the surface of the basic plate and thick SiO2 film 22 is formed on the surface of the first multicristal film by oxidation treatment. Then the thin SiO2 film 21 is taken off and at the same time a part of thick SiO2 film 22 is also taken off and after forming thin SiO2 film 23 which charge tunnel is possible on the surface of the basic plate, Si3N4 film 24 is formed on whole surface and second multicristal Si film 25 is formed adjacent to the first multicristal film 19. Whereby memory cell of 2 element/1 bit construction is formed in small area.
JP10394578A 1978-08-28 1978-08-28 Method for manufacturing fixed memory Granted JPS5530845A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10394578A JPS5530845A (en) 1978-08-28 1978-08-28 Method for manufacturing fixed memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10394578A JPS5530845A (en) 1978-08-28 1978-08-28 Method for manufacturing fixed memory

Publications (2)

Publication Number Publication Date
JPS5530845A true JPS5530845A (en) 1980-03-04
JPS647511B2 JPS647511B2 (en) 1989-02-09

Family

ID=14367570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10394578A Granted JPS5530845A (en) 1978-08-28 1978-08-28 Method for manufacturing fixed memory

Country Status (1)

Country Link
JP (1) JPS5530845A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60121772A (en) * 1983-12-05 1985-06-29 Mitsubishi Electric Corp Nonvolatile semiconductor memory device
JPS6164153A (en) * 1984-09-05 1986-04-02 Nec Corp Semiconductor memory storage and manufacture thereof

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05185440A (en) * 1991-12-12 1993-07-27 Matsushita Refrig Co Ltd Apparatus for producing open-cell rigid urethane foam and method for producing heat insulating object

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5360182A (en) * 1976-11-11 1978-05-30 Sony Corp Non-volatile memory transistor
JPS54105979A (en) * 1978-02-07 1979-08-20 Sony Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5360182A (en) * 1976-11-11 1978-05-30 Sony Corp Non-volatile memory transistor
JPS54105979A (en) * 1978-02-07 1979-08-20 Sony Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60121772A (en) * 1983-12-05 1985-06-29 Mitsubishi Electric Corp Nonvolatile semiconductor memory device
JPS6164153A (en) * 1984-09-05 1986-04-02 Nec Corp Semiconductor memory storage and manufacture thereof

Also Published As

Publication number Publication date
JPS647511B2 (en) 1989-02-09

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