JPS53108740A - Memory circuit - Google Patents

Memory circuit

Info

Publication number
JPS53108740A
JPS53108740A JP2360077A JP2360077A JPS53108740A JP S53108740 A JPS53108740 A JP S53108740A JP 2360077 A JP2360077 A JP 2360077A JP 2360077 A JP2360077 A JP 2360077A JP S53108740 A JPS53108740 A JP S53108740A
Authority
JP
Japan
Prior art keywords
memory circuit
depletion
bit line
type transistor
output point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2360077A
Other languages
Japanese (ja)
Inventor
Osamu Kudo
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2360077A priority Critical patent/JPS53108740A/en
Publication of JPS53108740A publication Critical patent/JPS53108740A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To improve sensitivity by containing a depletion-type transistor between the sense output point and bit line.
JP2360077A 1977-03-04 1977-03-04 Memory circuit Pending JPS53108740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2360077A JPS53108740A (en) 1977-03-04 1977-03-04 Memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2360077A JPS53108740A (en) 1977-03-04 1977-03-04 Memory circuit

Publications (1)

Publication Number Publication Date
JPS53108740A true JPS53108740A (en) 1978-09-21

Family

ID=12115083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2360077A Pending JPS53108740A (en) 1977-03-04 1977-03-04 Memory circuit

Country Status (1)

Country Link
JP (1) JPS53108740A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0071989A2 (en) * 1981-08-05 1983-02-16 Nec Corporation Memory device
JPH04155690A (en) * 1990-10-18 1992-05-28 Nec Ic Microcomput Syst Ltd Semiconductor memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0071989A2 (en) * 1981-08-05 1983-02-16 Nec Corporation Memory device
JPH04155690A (en) * 1990-10-18 1992-05-28 Nec Ic Microcomput Syst Ltd Semiconductor memory

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