JPS5387674A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5387674A
JPS5387674A JP262277A JP262277A JPS5387674A JP S5387674 A JPS5387674 A JP S5387674A JP 262277 A JP262277 A JP 262277A JP 262277 A JP262277 A JP 262277A JP S5387674 A JPS5387674 A JP S5387674A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
low voltage
device capable
voltage driving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP262277A
Other languages
Japanese (ja)
Other versions
JPS609673B2 (en
Inventor
Toshio Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP52002622A priority Critical patent/JPS609673B2/en
Publication of JPS5387674A publication Critical patent/JPS5387674A/en
Publication of JPS609673B2 publication Critical patent/JPS609673B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain a memory device capable of performing non-volatile memory functions with low voltage driving.
JP52002622A 1977-01-12 1977-01-12 semiconductor storage device Expired JPS609673B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52002622A JPS609673B2 (en) 1977-01-12 1977-01-12 semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52002622A JPS609673B2 (en) 1977-01-12 1977-01-12 semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5387674A true JPS5387674A (en) 1978-08-02
JPS609673B2 JPS609673B2 (en) 1985-03-12

Family

ID=11534495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52002622A Expired JPS609673B2 (en) 1977-01-12 1977-01-12 semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS609673B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58106874A (en) * 1981-12-04 1983-06-25 イ−サム・リサ−チ・デイベロツプメント・カンパニ−・オブ・ザ・ヘブリユ・ユニバ−シテイ・オブ・エルサレム Electrically programmable memory disposed on substrate
US5216269A (en) * 1989-03-31 1993-06-01 U.S. Philips Corp. Electrically-programmable semiconductor memories with buried injector region

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0240569U (en) * 1988-09-09 1990-03-20

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58106874A (en) * 1981-12-04 1983-06-25 イ−サム・リサ−チ・デイベロツプメント・カンパニ−・オブ・ザ・ヘブリユ・ユニバ−シテイ・オブ・エルサレム Electrically programmable memory disposed on substrate
US5216269A (en) * 1989-03-31 1993-06-01 U.S. Philips Corp. Electrically-programmable semiconductor memories with buried injector region

Also Published As

Publication number Publication date
JPS609673B2 (en) 1985-03-12

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