ES291423A1 - A semiconductor device provided of a substrate made of semiconductor material (Machine-translation by Google Translate, not legally binding) - Google Patents

A semiconductor device provided of a substrate made of semiconductor material (Machine-translation by Google Translate, not legally binding)

Info

Publication number
ES291423A1
ES291423A1 ES0291423A ES291423A ES291423A1 ES 291423 A1 ES291423 A1 ES 291423A1 ES 0291423 A ES0291423 A ES 0291423A ES 291423 A ES291423 A ES 291423A ES 291423 A1 ES291423 A1 ES 291423A1
Authority
ES
Spain
Prior art keywords
translation
machine
device provided
legally binding
google translate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES0291423A
Other languages
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of ES291423A1 publication Critical patent/ES291423A1/en
Expired legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)

Abstract

A semiconductor device provided with a substratum made of semiconductor material and characterized in that said sub-stratum is provided with an insulating layer thereon and a monocrystalline semiconductor channel placed between said substep and said insulating layer, from a source connected to said channel, of a drain spaced from said source and connected to said channel and to a portal electrode connected to said opposite and spaced insulating layer of the portion of said channel between said source and said drain. (Machine-translation by Google Translate, not legally binding)
ES0291423A 1962-09-07 1963-09-06 A semiconductor device provided of a substrate made of semiconductor material (Machine-translation by Google Translate, not legally binding) Expired ES291423A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US22201962A 1962-09-07 1962-09-07

Publications (1)

Publication Number Publication Date
ES291423A1 true ES291423A1 (en) 1964-02-16

Family

ID=22830411

Family Applications (1)

Application Number Title Priority Date Filing Date
ES0291423A Expired ES291423A1 (en) 1962-09-07 1963-09-06 A semiconductor device provided of a substrate made of semiconductor material (Machine-translation by Google Translate, not legally binding)

Country Status (2)

Country Link
AT (1) AT251037B (en)
ES (1) ES291423A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614861C3 (en) * 1967-09-01 1982-03-11 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Process for the manufacture of a junction field effect transistor

Also Published As

Publication number Publication date
AT251037B (en) 1966-12-12

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