JPS5244578A - Complementary type insulated gate field effect semiconductor device - Google Patents

Complementary type insulated gate field effect semiconductor device

Info

Publication number
JPS5244578A
JPS5244578A JP50120431A JP12043175A JPS5244578A JP S5244578 A JPS5244578 A JP S5244578A JP 50120431 A JP50120431 A JP 50120431A JP 12043175 A JP12043175 A JP 12043175A JP S5244578 A JPS5244578 A JP S5244578A
Authority
JP
Japan
Prior art keywords
semiconductor device
field effect
insulated gate
gate field
complementary type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50120431A
Other languages
Japanese (ja)
Inventor
Mikio Kyomasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50120431A priority Critical patent/JPS5244578A/en
Publication of JPS5244578A publication Critical patent/JPS5244578A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub

Abstract

PURPOSE:A C-MOSFET wherein an N<-> or P<-> type layer of nearly uniform impurity concentration distribution is provided over a P type or N type semiconductor substrate whereby the base length of parasitically produced transistors are made longer and their amplification factor is reduced.
JP50120431A 1975-10-06 1975-10-06 Complementary type insulated gate field effect semiconductor device Pending JPS5244578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50120431A JPS5244578A (en) 1975-10-06 1975-10-06 Complementary type insulated gate field effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50120431A JPS5244578A (en) 1975-10-06 1975-10-06 Complementary type insulated gate field effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5244578A true JPS5244578A (en) 1977-04-07

Family

ID=14786032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50120431A Pending JPS5244578A (en) 1975-10-06 1975-10-06 Complementary type insulated gate field effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5244578A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51116849A (en) * 1975-04-07 1976-10-14 Du Pont Mitsui Fluorochem Co Ltd Powdered copolymers from ethylene and fluorine containing olefin

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919779A (en) * 1972-04-14 1974-02-21

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919779A (en) * 1972-04-14 1974-02-21

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51116849A (en) * 1975-04-07 1976-10-14 Du Pont Mitsui Fluorochem Co Ltd Powdered copolymers from ethylene and fluorine containing olefin
JPS5320063B2 (en) * 1975-04-07 1978-06-24

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