JPS5394776A - Nonvolatile semiconductor memory device - Google Patents

Nonvolatile semiconductor memory device

Info

Publication number
JPS5394776A
JPS5394776A JP865577A JP865577A JPS5394776A JP S5394776 A JPS5394776 A JP S5394776A JP 865577 A JP865577 A JP 865577A JP 865577 A JP865577 A JP 865577A JP S5394776 A JPS5394776 A JP S5394776A
Authority
JP
Japan
Prior art keywords
memory device
semiconductor memory
nonvolatile semiconductor
channel
whidth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP865577A
Other languages
Japanese (ja)
Inventor
Takaaki Hagiwara
Toshimasa Kihara
Shinji Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP865577A priority Critical patent/JPS5394776A/en
Publication of JPS5394776A publication Critical patent/JPS5394776A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7886—Hot carrier produced by avalanche breakdown of a PN junction, e.g. FAMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To prevent the increase of the channel whidth and to lower the threshold voltage, by providing the avalanche region to the side which is not in contact with neither the source nor drain regions of the channel circumference part.
JP865577A 1977-01-31 1977-01-31 Nonvolatile semiconductor memory device Pending JPS5394776A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP865577A JPS5394776A (en) 1977-01-31 1977-01-31 Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP865577A JPS5394776A (en) 1977-01-31 1977-01-31 Nonvolatile semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS5394776A true JPS5394776A (en) 1978-08-19

Family

ID=11698938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP865577A Pending JPS5394776A (en) 1977-01-31 1977-01-31 Nonvolatile semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5394776A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197778A (en) * 1982-05-12 1983-11-17 Mitsubishi Electric Corp Semiconductor nonvolatile memory storage and manufacture thereof
JPS61222159A (en) * 1985-01-30 1986-10-02 テキサス　インスツルメンツ　インコ−ポレイテツド Electrically programmable memory

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197778A (en) * 1982-05-12 1983-11-17 Mitsubishi Electric Corp Semiconductor nonvolatile memory storage and manufacture thereof
JPS61222159A (en) * 1985-01-30 1986-10-02 テキサス　インスツルメンツ　インコ−ポレイテツド Electrically programmable memory

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