JPS53101988A - Semiconductor resistance device - Google Patents
Semiconductor resistance deviceInfo
- Publication number
- JPS53101988A JPS53101988A JP1605677A JP1605677A JPS53101988A JP S53101988 A JPS53101988 A JP S53101988A JP 1605677 A JP1605677 A JP 1605677A JP 1605677 A JP1605677 A JP 1605677A JP S53101988 A JPS53101988 A JP S53101988A
- Authority
- JP
- Japan
- Prior art keywords
- resistance device
- semiconductor resistance
- forming
- conductivity type
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000000295 complement effect Effects 0.000 abstract 1
- 238000010348 incorporation Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a high resistance suitable for incorporation into an oscillation circuit using complementary type MIS transistors by forming a shallow region of a low concentration and opposite conductivity type within the region of one conductivity type of a semiconductor substrate through ion implantation thereby forming a resistance layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1605677A JPS53101988A (en) | 1977-02-18 | 1977-02-18 | Semiconductor resistance device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1605677A JPS53101988A (en) | 1977-02-18 | 1977-02-18 | Semiconductor resistance device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53101988A true JPS53101988A (en) | 1978-09-05 |
Family
ID=11905914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1605677A Pending JPS53101988A (en) | 1977-02-18 | 1977-02-18 | Semiconductor resistance device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53101988A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4984582A (en) * | 1972-12-20 | 1974-08-14 | ||
JPS4985972A (en) * | 1972-10-04 | 1974-08-17 | ||
JPS50110584A (en) * | 1974-02-07 | 1975-08-30 |
-
1977
- 1977-02-18 JP JP1605677A patent/JPS53101988A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4985972A (en) * | 1972-10-04 | 1974-08-17 | ||
JPS4984582A (en) * | 1972-12-20 | 1974-08-14 | ||
JPS50110584A (en) * | 1974-02-07 | 1975-08-30 |
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