GB1320290A - Protective circuit for an insulated gate field effect transistor - Google Patents

Protective circuit for an insulated gate field effect transistor

Info

Publication number
GB1320290A
GB1320290A GB2387372A GB2387372A GB1320290A GB 1320290 A GB1320290 A GB 1320290A GB 2387372 A GB2387372 A GB 2387372A GB 2387372 A GB2387372 A GB 2387372A GB 1320290 A GB1320290 A GB 1320290A
Authority
GB
United Kingdom
Prior art keywords
igfet
protected
protective
gate electrode
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2387372A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
National Cash Register Co
Original Assignee
NCR Corp
National Cash Register Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp, National Cash Register Co filed Critical NCR Corp
Publication of GB1320290A publication Critical patent/GB1320290A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

1320290 Semi-conductor devices NATIONAL CASH REGISTER CO 22 May 1972 [8 June 1971] 23873/72 Heading H1K The gate insulation of an IGFET 24 is protected by the provision of a further IGFET 16 having an elongate drain region 18 connected at one end 22 to the gate electrode 30 of the protected IGFET 24 and at the other end 19 to an input terminal 21 and to the gate electrode 10 of the protective IGFET 16, which gate electrode 10 overlies a thicker gate insulating layer than that of the protected device. The source region 14 of the protective IGFET is grounded. In the presence of a potentially damaging voltage overload the IGFET 16 switches on, and the gate of the device 24 is protected by the combination of the draining of current to ground through the device 16 and the distributed resistance of the elongate drain region 18. In the event of a higher voltage overload the input end 19 of the drain region 18 can be arranged to operate as an avalanche breakdown diode, shorting the overload directly to the grounded substrate 17. Drain-to-source punch-through of the protective IGFET 16 may also be arranged to occur at a certain voltage level less than that which would damage the IGFET 24.
GB2387372A 1971-06-08 1972-05-22 Protective circuit for an insulated gate field effect transistor Expired GB1320290A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15097271A 1971-06-08 1971-06-08

Publications (1)

Publication Number Publication Date
GB1320290A true GB1320290A (en) 1973-06-13

Family

ID=22536786

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2387372A Expired GB1320290A (en) 1971-06-08 1972-05-22 Protective circuit for an insulated gate field effect transistor

Country Status (5)

Country Link
CA (1) CA980012A (en)
DE (1) DE2227339A1 (en)
FR (1) FR2140436B3 (en)
GB (1) GB1320290A (en)
IT (1) IT956338B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2531846A1 (en) * 1974-07-16 1976-01-29 Nippon Electric Co INTEGRATED SEMI-CONDUCTOR CIRCUIT

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119670A (en) * 1982-01-11 1983-07-16 Nissan Motor Co Ltd Semiconductor device
IT1213260B (en) * 1984-12-18 1989-12-14 Sgs Thomson Microelectronics BRIDGE CIRCUIT OF N-CHANNEL POWER MOS TRANSISTORS INTEGRATED AND PROCEDURE FOR ITS MANUFACTURE.
US5399893A (en) * 1993-08-24 1995-03-21 Motorola, Inc. Diode protected semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2531846A1 (en) * 1974-07-16 1976-01-29 Nippon Electric Co INTEGRATED SEMI-CONDUCTOR CIRCUIT

Also Published As

Publication number Publication date
FR2140436B3 (en) 1975-08-08
IT956338B (en) 1973-10-10
FR2140436A1 (en) 1973-01-19
DE2227339A1 (en) 1972-12-21
CA980012A (en) 1975-12-16

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees