GB1320290A - Protective circuit for an insulated gate field effect transistor - Google Patents
Protective circuit for an insulated gate field effect transistorInfo
- Publication number
- GB1320290A GB1320290A GB2387372A GB2387372A GB1320290A GB 1320290 A GB1320290 A GB 1320290A GB 2387372 A GB2387372 A GB 2387372A GB 2387372 A GB2387372 A GB 2387372A GB 1320290 A GB1320290 A GB 1320290A
- Authority
- GB
- United Kingdom
- Prior art keywords
- igfet
- protected
- protective
- gate electrode
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000001681 protective effect Effects 0.000 title abstract 4
- 230000005669 field effect Effects 0.000 title 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- UFULAYFCSOUIOV-UHFFFAOYSA-N cysteamine Chemical compound NCCS UFULAYFCSOUIOV-UHFFFAOYSA-N 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
1320290 Semi-conductor devices NATIONAL CASH REGISTER CO 22 May 1972 [8 June 1971] 23873/72 Heading H1K The gate insulation of an IGFET 24 is protected by the provision of a further IGFET 16 having an elongate drain region 18 connected at one end 22 to the gate electrode 30 of the protected IGFET 24 and at the other end 19 to an input terminal 21 and to the gate electrode 10 of the protective IGFET 16, which gate electrode 10 overlies a thicker gate insulating layer than that of the protected device. The source region 14 of the protective IGFET is grounded. In the presence of a potentially damaging voltage overload the IGFET 16 switches on, and the gate of the device 24 is protected by the combination of the draining of current to ground through the device 16 and the distributed resistance of the elongate drain region 18. In the event of a higher voltage overload the input end 19 of the drain region 18 can be arranged to operate as an avalanche breakdown diode, shorting the overload directly to the grounded substrate 17. Drain-to-source punch-through of the protective IGFET 16 may also be arranged to occur at a certain voltage level less than that which would damage the IGFET 24.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15097271A | 1971-06-08 | 1971-06-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1320290A true GB1320290A (en) | 1973-06-13 |
Family
ID=22536786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2387372A Expired GB1320290A (en) | 1971-06-08 | 1972-05-22 | Protective circuit for an insulated gate field effect transistor |
Country Status (5)
Country | Link |
---|---|
CA (1) | CA980012A (en) |
DE (1) | DE2227339A1 (en) |
FR (1) | FR2140436B3 (en) |
GB (1) | GB1320290A (en) |
IT (1) | IT956338B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2531846A1 (en) * | 1974-07-16 | 1976-01-29 | Nippon Electric Co | INTEGRATED SEMI-CONDUCTOR CIRCUIT |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58119670A (en) * | 1982-01-11 | 1983-07-16 | Nissan Motor Co Ltd | Semiconductor device |
IT1213260B (en) * | 1984-12-18 | 1989-12-14 | Sgs Thomson Microelectronics | BRIDGE CIRCUIT OF N-CHANNEL POWER MOS TRANSISTORS INTEGRATED AND PROCEDURE FOR ITS MANUFACTURE. |
US5399893A (en) * | 1993-08-24 | 1995-03-21 | Motorola, Inc. | Diode protected semiconductor device |
-
1972
- 1972-04-10 CA CA139,341A patent/CA980012A/en not_active Expired
- 1972-05-22 GB GB2387372A patent/GB1320290A/en not_active Expired
- 1972-06-05 FR FR7220057A patent/FR2140436B3/fr not_active Expired
- 1972-06-06 DE DE19722227339 patent/DE2227339A1/en active Pending
- 1972-06-07 IT IT2537372A patent/IT956338B/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2531846A1 (en) * | 1974-07-16 | 1976-01-29 | Nippon Electric Co | INTEGRATED SEMI-CONDUCTOR CIRCUIT |
Also Published As
Publication number | Publication date |
---|---|
FR2140436B3 (en) | 1975-08-08 |
IT956338B (en) | 1973-10-10 |
FR2140436A1 (en) | 1973-01-19 |
DE2227339A1 (en) | 1972-12-21 |
CA980012A (en) | 1975-12-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |