JPS55146957A - Semiconductor resistor and method of fabricating same - Google Patents

Semiconductor resistor and method of fabricating same

Info

Publication number
JPS55146957A
JPS55146957A JP3468380A JP3468380A JPS55146957A JP S55146957 A JPS55146957 A JP S55146957A JP 3468380 A JP3468380 A JP 3468380A JP 3468380 A JP3468380 A JP 3468380A JP S55146957 A JPS55146957 A JP S55146957A
Authority
JP
Japan
Prior art keywords
semiconductor resistor
fabricating same
fabricating
resistor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3468380A
Other languages
Japanese (ja)
Other versions
JPS6356707B2 (en
Inventor
Jiyon Saari Maikuru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Space and Mission Systems Corp
Original Assignee
TRW Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TRW Inc filed Critical TRW Inc
Publication of JPS55146957A publication Critical patent/JPS55146957A/en
Publication of JPS6356707B2 publication Critical patent/JPS6356707B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605Resistors with PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802Resistors only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03MCODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00Analogue/digital conversion; Digital/analogue conversion
    • H03M1/66Digital/analogue converters
    • H03M1/74Simultaneous conversion
    • H03M1/78Simultaneous conversion using ladder network
    • H03M1/785Simultaneous conversion using ladder network using resistors, i.e. R-2R ladders
JP3468380A 1979-03-19 1980-03-18 Semiconductor resistor and method of fabricating same Granted JPS55146957A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2182979A 1979-03-19 1979-03-19

Publications (2)

Publication Number Publication Date
JPS55146957A true JPS55146957A (en) 1980-11-15
JPS6356707B2 JPS6356707B2 (en) 1988-11-09

Family

ID=21806386

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3468380A Granted JPS55146957A (en) 1979-03-19 1980-03-18 Semiconductor resistor and method of fabricating same

Country Status (6)

Country Link
JP (1) JPS55146957A (en)
CA (1) CA1122721A (en)
DE (1) DE3009042A1 (en)
FR (1) FR2452180A1 (en)
GB (1) GB2044998A (en)
SE (1) SE8002073L (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58141551A (en) * 1982-02-17 1983-08-22 Nec Corp Semiconductor device
JPS59229857A (en) * 1983-06-07 1984-12-24 Rohm Co Ltd Resistor circuit
JPS60139306U (en) * 1984-02-25 1985-09-14 株式会社村田製作所 High frequency device using coaxial resonator
JPS61172364A (en) * 1985-09-27 1986-08-04 Nec Corp Semiconductor device to which constant voltage circuit is formed
JPS63244765A (en) * 1987-03-31 1988-10-12 Toshiba Corp Integrated circuit with diffused resistor

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2054997B (en) * 1979-05-23 1984-01-18 Suwa Seikosha Kk Temperature detecting circuit
JPS57162356A (en) * 1981-03-30 1982-10-06 Toshiba Corp Integrated circuit device
DE3443773A1 (en) * 1984-11-30 1986-06-05 Robert Bosch Gmbh, 7000 Stuttgart Monolithically integrated voltage divider
DE3526461A1 (en) * 1985-07-24 1987-01-29 Telefunken Electronic Gmbh Resistor chain
JPH0434173Y2 (en) * 1987-10-27 1992-08-14
US6593869B1 (en) * 2002-03-28 2003-07-15 Hrl Laboratories, Llc High efficiency, high output drive current switch with application to digital to analog conversion

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2351505A1 (en) * 1976-05-13 1977-12-09 Ibm France PROCEDURE FOR CORRECTING THE TENSION COEFFICIENT OF SEMICONDUCTOR, IMPLANTED OR DIFFUSED RESISTORS

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58141551A (en) * 1982-02-17 1983-08-22 Nec Corp Semiconductor device
JPS59229857A (en) * 1983-06-07 1984-12-24 Rohm Co Ltd Resistor circuit
JPS60139306U (en) * 1984-02-25 1985-09-14 株式会社村田製作所 High frequency device using coaxial resonator
JPS61172364A (en) * 1985-09-27 1986-08-04 Nec Corp Semiconductor device to which constant voltage circuit is formed
JPH035065B2 (en) * 1985-09-27 1991-01-24 Nippon Electric Co
JPS63244765A (en) * 1987-03-31 1988-10-12 Toshiba Corp Integrated circuit with diffused resistor

Also Published As

Publication number Publication date
JPS6356707B2 (en) 1988-11-09
GB2044998A (en) 1980-10-22
DE3009042A1 (en) 1980-10-02
SE8002073L (en) 1980-09-20
CA1122721A (en) 1982-04-27
FR2452180A1 (en) 1980-10-17

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