JPS57154845A - Forming method for rear face electrode - Google Patents

Forming method for rear face electrode

Info

Publication number
JPS57154845A
JPS57154845A JP4143581A JP4143581A JPS57154845A JP S57154845 A JPS57154845 A JP S57154845A JP 4143581 A JP4143581 A JP 4143581A JP 4143581 A JP4143581 A JP 4143581A JP S57154845 A JPS57154845 A JP S57154845A
Authority
JP
Japan
Prior art keywords
layer
nickel
nickel layer
sputtering
rear face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4143581A
Other languages
Japanese (ja)
Other versions
JPS6310894B2 (en
Inventor
Hirotake Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4143581A priority Critical patent/JPS57154845A/en
Publication of JPS57154845A publication Critical patent/JPS57154845A/en
Publication of JPS6310894B2 publication Critical patent/JPS6310894B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B20/00—Signal processing not specific to the method of recording or reproducing; Circuits therefor
    • G11B20/10—Digital recording or reproducing
    • G11B20/18—Error detection or correction; Testing, e.g. of drop-outs
    • G11B20/1806—Pulse code modulation systems for audio signals
    • G11B20/1809—Pulse code modulation systems for audio signals by interleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To prevent exfoliation in the interfaces among a nickel layer and other layers by successively forming the nickel layer and a silver layer through a drive process from the back side and using nickel containing phosphorus as a material for forming the nickel layer. CONSTITUTION:A surface layer obtained by oxidizing the back of a semiconductor wafer 1 through sputtering etching is removed, and the nickel layer 2 is deposited through sputtering while using nickel containing phosphorus as the material. The nickel layer 2 is etched through sputtering and the silver layer 3 is further deposited through sputtering, the whole is sintered in a nitrogen gas atmosphere by a sintering oven, an ohmic contact between the back of the semicondutor wafer 1 and the nickel layer and further an ohmic contact between the nickel layer 2 and the silver layer 3 are acquired, and the formation of the rear face electrode is completed.
JP4143581A 1981-03-19 1981-03-19 Forming method for rear face electrode Granted JPS57154845A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4143581A JPS57154845A (en) 1981-03-19 1981-03-19 Forming method for rear face electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4143581A JPS57154845A (en) 1981-03-19 1981-03-19 Forming method for rear face electrode

Publications (2)

Publication Number Publication Date
JPS57154845A true JPS57154845A (en) 1982-09-24
JPS6310894B2 JPS6310894B2 (en) 1988-03-10

Family

ID=12608286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4143581A Granted JPS57154845A (en) 1981-03-19 1981-03-19 Forming method for rear face electrode

Country Status (1)

Country Link
JP (1) JPS57154845A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02163971A (en) * 1988-12-16 1990-06-25 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0280435U (en) * 1988-12-12 1990-06-21

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02163971A (en) * 1988-12-16 1990-06-25 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture

Also Published As

Publication number Publication date
JPS6310894B2 (en) 1988-03-10

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