JPS529897A - Manufacturing method of thin oxide semiconductor film - Google Patents

Manufacturing method of thin oxide semiconductor film

Info

Publication number
JPS529897A
JPS529897A JP8530375A JP8530375A JPS529897A JP S529897 A JPS529897 A JP S529897A JP 8530375 A JP8530375 A JP 8530375A JP 8530375 A JP8530375 A JP 8530375A JP S529897 A JPS529897 A JP S529897A
Authority
JP
Japan
Prior art keywords
manufacturing
oxide semiconductor
semiconductor film
thin oxide
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8530375A
Other languages
Japanese (ja)
Other versions
JPS5813006B2 (en
Inventor
Koichi Shinohara
Yasuhiro Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP8530375A priority Critical patent/JPS5813006B2/en
Publication of JPS529897A publication Critical patent/JPS529897A/en
Publication of JPS5813006B2 publication Critical patent/JPS5813006B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Manufacturing Of Electric Cables (AREA)

Abstract

PURPOSE: To manufacture by vacuum vaporization thin semiconductor films which have good reproducibility, and have any resistance value over a wide range from low to high resistance.
COPYRIGHT: (C)1977,JPO&Japio
JP8530375A 1975-07-14 1975-07-14 Sankabutsuhandoutaihakumakuno Seizouhouhou Expired JPS5813006B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8530375A JPS5813006B2 (en) 1975-07-14 1975-07-14 Sankabutsuhandoutaihakumakuno Seizouhouhou

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8530375A JPS5813006B2 (en) 1975-07-14 1975-07-14 Sankabutsuhandoutaihakumakuno Seizouhouhou

Publications (2)

Publication Number Publication Date
JPS529897A true JPS529897A (en) 1977-01-25
JPS5813006B2 JPS5813006B2 (en) 1983-03-11

Family

ID=13854818

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8530375A Expired JPS5813006B2 (en) 1975-07-14 1975-07-14 Sankabutsuhandoutaihakumakuno Seizouhouhou

Country Status (1)

Country Link
JP (1) JPS5813006B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4353938A (en) * 1980-07-28 1982-10-12 International Standard Electric Corporation Coating powder with valve-metal
JPS58212009A (en) * 1982-06-02 1983-12-09 株式会社日立製作所 Method of forming transparent conductive film
CN114086125A (en) * 2021-11-19 2022-02-25 乐金显示光电科技(中国)有限公司 Glass substrate evaporation device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4353938A (en) * 1980-07-28 1982-10-12 International Standard Electric Corporation Coating powder with valve-metal
JPS58212009A (en) * 1982-06-02 1983-12-09 株式会社日立製作所 Method of forming transparent conductive film
JPH0370328B2 (en) * 1982-06-02 1991-11-07 Hitachi Ltd
CN114086125A (en) * 2021-11-19 2022-02-25 乐金显示光电科技(中国)有限公司 Glass substrate evaporation device
CN114086125B (en) * 2021-11-19 2024-03-01 乐金显示光电科技(中国)有限公司 Glass substrate vapor deposition device

Also Published As

Publication number Publication date
JPS5813006B2 (en) 1983-03-11

Similar Documents

Publication Publication Date Title
JPS52116896A (en) Electrode plate and its preparation
JPS529897A (en) Manufacturing method of thin oxide semiconductor film
JPS5380966A (en) Manufacture of electrode fdr semiconductor device
JPS51127680A (en) Manufacturing process of semiconductor device
JPS5235980A (en) Manufacturing method of semiconductor device
JPS51126384A (en) A method of forming a thin film by sputtering
JPS5211787A (en) Method of manufacturing schottky barrier solar battery
JPS51118381A (en) Manufacturing process for semiconductor unit
JPS5386177A (en) Production of semiconductor device
JPS5258472A (en) Selective oxidation
JPS5273713A (en) Production of magnetoresistive thin film head
JPS5335383A (en) Semiconductor device
JPS5263673A (en) Production of semiconductor device
JPS5521183A (en) Method of manufacturing semiconductor device
JPS5211765A (en) Method of manufacturing semiconductor device
JPS51142697A (en) Process of an oxide semiconductor film
JPS5293276A (en) Manufacture for semiconductor device
JPS5219967A (en) Semiconductor manufacturing process
JPS53118990A (en) Manufacture for resistor
JPS5258899A (en) Production of dielectric thin film
JPS5259896A (en) Manufacture of dielectric film
JPS5341186A (en) Manufacture of semiconductor device
JPS5351978A (en) Manufacture of semiconductor device
JPS5232284A (en) Manufacturing method of semiconductor device
JPS5245884A (en) Process for production of semiconductor device