JPS57180170A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS57180170A JPS57180170A JP6546281A JP6546281A JPS57180170A JP S57180170 A JPS57180170 A JP S57180170A JP 6546281 A JP6546281 A JP 6546281A JP 6546281 A JP6546281 A JP 6546281A JP S57180170 A JPS57180170 A JP S57180170A
- Authority
- JP
- Japan
- Prior art keywords
- channel
- layer
- layers
- source
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000000630 rising effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
Abstract
PURPOSE:To manufacture the optimum device for high speed and high concentration by a method wherein the P<+> layer is connected to the N layers on the surface of the P type Si substrate and a conductor is provided on the boundary between the P<+> layer and at least one of the N layers. CONSTITUTION:The P<-> channel 14 is formed between the two N layers 2 and 3 on the P type Si substrate 1 and the gate 6 is further formed on the interface of the junctions with the N layer 2 through the intermediary of the SiO2 5. In this constitution, the junction breakdown on the interface between the source 22 and the channel 14 may be controlled by the impressed voltage on the gate electrode 6 to evade most of the conventional short-channel effect as well as to simultaneously restrain the breakdown from declining, the threshold level voltage from rising and the drain depletion layer from spreading, consequently the leakage current may be minimized by means of increasing the channel concentration as much as possible within the limited voltage at the external circuit between the source and the gate while flowing most of the electric charge from the source into the drain through the channel. Through these procedures, the optimum device for high speed and high concentration with proper threshold level and high beakdown strength may be manufactured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6546281A JPS57180170A (en) | 1981-04-30 | 1981-04-30 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6546281A JPS57180170A (en) | 1981-04-30 | 1981-04-30 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57180170A true JPS57180170A (en) | 1982-11-06 |
Family
ID=13287809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6546281A Pending JPS57180170A (en) | 1981-04-30 | 1981-04-30 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57180170A (en) |
-
1981
- 1981-04-30 JP JP6546281A patent/JPS57180170A/en active Pending
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