JPS5734369A - Protective diode for insulated gate field-effect transistor - Google Patents

Protective diode for insulated gate field-effect transistor

Info

Publication number
JPS5734369A
JPS5734369A JP10946080A JP10946080A JPS5734369A JP S5734369 A JPS5734369 A JP S5734369A JP 10946080 A JP10946080 A JP 10946080A JP 10946080 A JP10946080 A JP 10946080A JP S5734369 A JPS5734369 A JP S5734369A
Authority
JP
Japan
Prior art keywords
region
regions
substrate
protective diode
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10946080A
Other languages
Japanese (ja)
Inventor
Yoshiki Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP10946080A priority Critical patent/JPS5734369A/en
Publication of JPS5734369A publication Critical patent/JPS5734369A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements

Abstract

PURPOSE:To enable to apply a layer current as well as to obtain a small input capacity protective element, in which the large current can be applied, by a method wherein a reverse conductive region to be connected to an input gate and a high density region, which was floating formed surrounding the reverse conductive region, are provided on a low density substrate and a punch-through is given between abovementioned two regions. CONSTITUTION:For example, in the process wherein a dipole MOSFET is formed on a P<-> substrate, an annular P region 34 is formed simultaneously with channel regions 32 and 33, and an N region 38 is formed in a region 34 when source and drain regions 37, 39 and 40 are formed. The input gate electrode G1 covering the channel 32 is spread out as far as above the regions 34 and 38, and connected to N region 38 through a selective oxide layer. Through these procedures, the abnormal voltage of the G1 is punched through between the regions 34 and 38, and the breakdown of the FET can be prevented. Also, as the withstand voltage can be controlled within the range between regions 34 and 38 and a low density substrate is used, the input capacity of the protective diode can be made smaller than the ordinary junction diode.
JP10946080A 1980-08-09 1980-08-09 Protective diode for insulated gate field-effect transistor Pending JPS5734369A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10946080A JPS5734369A (en) 1980-08-09 1980-08-09 Protective diode for insulated gate field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10946080A JPS5734369A (en) 1980-08-09 1980-08-09 Protective diode for insulated gate field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5734369A true JPS5734369A (en) 1982-02-24

Family

ID=14510788

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10946080A Pending JPS5734369A (en) 1980-08-09 1980-08-09 Protective diode for insulated gate field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5734369A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164262A (en) * 1988-06-30 1992-11-17 Toray Industries, Inc. Polyurethane polyamide self-crimping conjugate fiber

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164262A (en) * 1988-06-30 1992-11-17 Toray Industries, Inc. Polyurethane polyamide self-crimping conjugate fiber

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