JPS5562772A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5562772A
JPS5562772A JP13641478A JP13641478A JPS5562772A JP S5562772 A JPS5562772 A JP S5562772A JP 13641478 A JP13641478 A JP 13641478A JP 13641478 A JP13641478 A JP 13641478A JP S5562772 A JPS5562772 A JP S5562772A
Authority
JP
Japan
Prior art keywords
connecting portion
channel
remaining portions
currents
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13641478A
Other languages
Japanese (ja)
Other versions
JPS628955B2 (en
Inventor
Takumi Miyashita
Koichi Mikome
Joji Murakami
Yoshio Watabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13641478A priority Critical patent/JPS5562772A/en
Publication of JPS5562772A publication Critical patent/JPS5562772A/en
Publication of JPS628955B2 publication Critical patent/JPS628955B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To prevent temperature rise by decreasing channel currents the more the nearer a connecting portion of a source and a drain while diminishing occupying area by bringing the connecting portion close to a gate.
CONSTITUTION: An ion injection layer 13 is manufactured to a channel portion near to a connecting portion 12 of a source and a drain, threshold value voltage is heightened by controlling concentration, currents flowing through the portion are made less than the currents of remaining portions 13a, 13b, and the generation of heat at a portion 13 near to the connecting portion 12 is lessened, thus preventing temperature rise. Consequently, the connecting portion 12 may tolerably be brought near to a gate. The same effect can also be obtained by means of a method that equivalently increases threshold value voltage by weakening an electric field applied to a channel just under a thick film portion more than an electric fleld of a thin film portion by partially thickening the thickness of a gate oxide film or a method that the length L of a channel central portion 6a is made larger than remaining portions 6b, 6c, the width is made to be W and the current value of the channel central portion 6a is made smaller than the remaining portions in proportional to W/L.
COPYRIGHT: (C)1980,JPO&Japio
JP13641478A 1978-11-06 1978-11-06 Semiconductor device Granted JPS5562772A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13641478A JPS5562772A (en) 1978-11-06 1978-11-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13641478A JPS5562772A (en) 1978-11-06 1978-11-06 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5562772A true JPS5562772A (en) 1980-05-12
JPS628955B2 JPS628955B2 (en) 1987-02-25

Family

ID=15174596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13641478A Granted JPS5562772A (en) 1978-11-06 1978-11-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5562772A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102608137B1 (en) * 2018-09-20 2023-11-29 엘지디스플레이 주식회사 Display apparatus

Also Published As

Publication number Publication date
JPS628955B2 (en) 1987-02-25

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