JPS55162288A - Manufacture of buried type photosemiconductor device - Google Patents

Manufacture of buried type photosemiconductor device

Info

Publication number
JPS55162288A
JPS55162288A JP7033079A JP7033079A JPS55162288A JP S55162288 A JPS55162288 A JP S55162288A JP 7033079 A JP7033079 A JP 7033079A JP 7033079 A JP7033079 A JP 7033079A JP S55162288 A JPS55162288 A JP S55162288A
Authority
JP
Japan
Prior art keywords
layer
buried
lamination
type
optical guide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7033079A
Other languages
Japanese (ja)
Other versions
JPS5640996B2 (en
Inventor
Hiroyuki Kano
Koichi Sugiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7033079A priority Critical patent/JPS55162288A/en
Publication of JPS55162288A publication Critical patent/JPS55162288A/en
Publication of JPS5640996B2 publication Critical patent/JPS5640996B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/06—LPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Weting (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To obtain a high performance of buried type photosemiconductor device by a method wherein a striped lamination of InP and In1-xGaxAs1-yPy is formed through chemical etching, and after melt-back treating by means of an unsaturated solution of In which contains As, an epitaxial layer is buried therein. CONSTITUTION:A lamination 6 is obtained through placing N-type InP optical guide layer 2, In1-xGaxAs1-yPy active layer 3, P-type InP optical guide layer 4, P-type In1-zGazAs1-wPw cap layer 5 on an N-type InP substrate 1. With a mask 7 applied thereon, it is etched as deep as the layer 4 by means of 5% Br methanol, and then subjected to metl-back treating as far as the optical guide layer 2 by means of an unsaturated solution of In containing As at 10-30%, thus forming a lamination 6'. Next, P-layer and N-layer are laminated through liquid phase epitaxial process, and the lamination 6' is buried therein. The mask 7 is removed, and an electrode 10 and a heat sink 9 are applied. According to this constitution, there is no surface level produced between active layer 3' and epitaxial layer 8, thus obtaining a high performance of buried photosemiconductor device.
JP7033079A 1979-06-04 1979-06-04 Manufacture of buried type photosemiconductor device Granted JPS55162288A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7033079A JPS55162288A (en) 1979-06-04 1979-06-04 Manufacture of buried type photosemiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7033079A JPS55162288A (en) 1979-06-04 1979-06-04 Manufacture of buried type photosemiconductor device

Publications (2)

Publication Number Publication Date
JPS55162288A true JPS55162288A (en) 1980-12-17
JPS5640996B2 JPS5640996B2 (en) 1981-09-25

Family

ID=13428304

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7033079A Granted JPS55162288A (en) 1979-06-04 1979-06-04 Manufacture of buried type photosemiconductor device

Country Status (1)

Country Link
JP (1) JPS55162288A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5662386A (en) * 1979-10-29 1981-05-28 Hitachi Ltd Manufacture of semiconductor device
FR2517485A1 (en) * 1981-12-01 1983-06-03 Itt METHOD OF MANUFACTURING SEMICONDUCTOR LASERS
JPS58157188A (en) * 1982-02-24 1983-09-19 プレツシ−・オ−バ−シ−ズ・リミテツド Semiconductor laser
US4963507A (en) * 1987-04-30 1990-10-16 Siemens Aktiengesellschaft Method and manufacturing a laser diode with buried active layer
EP0713275A1 (en) * 1994-11-19 1996-05-22 Lg Electronics Inc. Method for fabricating a semiconductor laser diode
WO2006004255A1 (en) * 2004-03-23 2006-01-12 Postech Academy-Industry Foundation ETCHANT FOR WET ETCHING AlXGaI-XAs EPITAXIAL LAYER AND METHOD FOR MANUFACTURING SEMI¬ CONDUCTOR DEVICE USING THE ETCHANT

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2015137373A1 (en) * 2014-03-11 2017-04-06 古河電気工業株式会社 Semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5662386A (en) * 1979-10-29 1981-05-28 Hitachi Ltd Manufacture of semiconductor device
JPS6361793B2 (en) * 1979-10-29 1988-11-30
FR2517485A1 (en) * 1981-12-01 1983-06-03 Itt METHOD OF MANUFACTURING SEMICONDUCTOR LASERS
JPS58157188A (en) * 1982-02-24 1983-09-19 プレツシ−・オ−バ−シ−ズ・リミテツド Semiconductor laser
US4963507A (en) * 1987-04-30 1990-10-16 Siemens Aktiengesellschaft Method and manufacturing a laser diode with buried active layer
EP0713275A1 (en) * 1994-11-19 1996-05-22 Lg Electronics Inc. Method for fabricating a semiconductor laser diode
JPH0927654A (en) * 1994-11-19 1997-01-28 Lg Electron Inc Manufacture of semiconductor laser diode
WO2006004255A1 (en) * 2004-03-23 2006-01-12 Postech Academy-Industry Foundation ETCHANT FOR WET ETCHING AlXGaI-XAs EPITAXIAL LAYER AND METHOD FOR MANUFACTURING SEMI¬ CONDUCTOR DEVICE USING THE ETCHANT

Also Published As

Publication number Publication date
JPS5640996B2 (en) 1981-09-25

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