JPS5776864A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5776864A
JPS5776864A JP15313680A JP15313680A JPS5776864A JP S5776864 A JPS5776864 A JP S5776864A JP 15313680 A JP15313680 A JP 15313680A JP 15313680 A JP15313680 A JP 15313680A JP S5776864 A JPS5776864 A JP S5776864A
Authority
JP
Japan
Prior art keywords
layer
wiring layer
wiring
contact
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15313680A
Other languages
Japanese (ja)
Inventor
Toru Inaba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15313680A priority Critical patent/JPS5776864A/en
Publication of JPS5776864A publication Critical patent/JPS5776864A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To improve the degree of integration of an integrated circuit by forming a trapezoid polysilicon layer, the surface thereof is oxidized, under the first wiring layer of section where the first wiring layer and the second wiring layer separated by a layer insulating layer contact. CONSTITUTION:When the first wiring layers 1, 11 are shaped onto a lower layer insulating layer 4 formed onto a semiconductor substrate not shown and the second wiring layer 21 and a cover glass layer 24 are molded through an upper layer phosphours-silicon-glass layer 14, the trapezoid polysilicon layer 6, the surface thereof has an oxide film 6', is formed under the section where the first wiring layer 1 and the second wiring layer 21 contact. Accordingly, the second wiring layer can be shaped positively even when the positions of through-holes for contact are displaced, and the degree of integration is also improved because the contact forming section need not be magnified and molded.
JP15313680A 1980-10-31 1980-10-31 Manufacture of semiconductor device Pending JPS5776864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15313680A JPS5776864A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15313680A JPS5776864A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5776864A true JPS5776864A (en) 1982-05-14

Family

ID=15555783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15313680A Pending JPS5776864A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5776864A (en)

Similar Documents

Publication Publication Date Title
JPS5750424A (en) Manufacture of semiconductor device
JPS5776864A (en) Manufacture of semiconductor device
JPS57167659A (en) Manufacture of semiconductor device
JPS56125875A (en) Semiconductor integrated circuit device
JPS55138859A (en) Multilayer wiring type semiconductor device
KR880014690A (en) CMOS integrated circuit having upper substrate contacts and its manufacturing method
JPS56158482A (en) Semiconductor device
JPS5740967A (en) Integrated circuit device
JPS5526687A (en) Manufacturing semiconductor device
JPS5534492A (en) Semiconductor integrated circuit device having mis field effect type transistor and its manufacture
JPS57104241A (en) Semiconductor device
JPS57184248A (en) Manufacture of semiconductor device
JPS5732655A (en) Semiconductor integrated circuit device
JPS57197866A (en) Semiconductor integrated circuit
JPS56157042A (en) Manufacture of semiconductor device
JPS5732654A (en) Semiconductor integrated circuit device
JPS56120155A (en) Coil for semiconductor integrated circuit and its manufacture
JPS56107553A (en) Semiconductor device and preparation thereof
JPS56130947A (en) Manufacture of semiconductor device
JPS5317286A (en) Production of semiconductor device
JPS546775A (en) Semiconductor device featuring stepped electrode structure
JPS5796564A (en) Manufacture of semiconductor device
JPS57197863A (en) Semiconductor integrated circuit device
JPS5759378A (en) Manufacture of semiconductor device
JPS5565456A (en) Manufacture of semiconductor device