JPS5750424A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To determine the relative positions of different conduction type impurity diffusion layers accurately by mounting a means opening the first and second diffusion layer regions at the same time when opening the insulating layers of regions capable of functioning as the different conduction type impurity diffusion layers. CONSTITUTION:The insulting layers of the first and second regions among the insulating layers formed on a semiconductor base are simultaneously removed and opened, insulating thin layers are shaped in these openings, and the insulating layers are opened again and the first diffusion layers are formed. The means is mounted which opens the second diffusion layer regions by forming and removing the insulating layer. When manufacturing the complementary type semiconductor device, the insulating thin layers 2'' are shaped to the openings 3'' of the insulating layer 2, the N type impurity diffusion layers 4 are molded to the openings 3''' obtained by selectively removing the insulating layers 2'', and the insulating layers 2''' are formed on the layers. The insulating layers on the base are removed extending over the whole surface, and only the openings 3<4>' of the regions capable of functioning as the P type impurity diffusion layers are shaped.