JPS5750424A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5750424A
JPS5750424A JP55126215A JP12621580A JPS5750424A JP S5750424 A JPS5750424 A JP S5750424A JP 55126215 A JP55126215 A JP 55126215A JP 12621580 A JP12621580 A JP 12621580A JP S5750424 A JPS5750424 A JP S5750424A
Authority
JP
Japan
Prior art keywords
layers
insulating
openings
regions
type impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55126215A
Other languages
Japanese (ja)
Inventor
Keiji Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP55126215A priority Critical patent/JPS5750424A/en
Publication of JPS5750424A publication Critical patent/JPS5750424A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To determine the relative positions of different conduction type impurity diffusion layers accurately by mounting a means opening the first and second diffusion layer regions at the same time when opening the insulating layers of regions capable of functioning as the different conduction type impurity diffusion layers. CONSTITUTION:The insulting layers of the first and second regions among the insulating layers formed on a semiconductor base are simultaneously removed and opened, insulating thin layers are shaped in these openings, and the insulating layers are opened again and the first diffusion layers are formed. The means is mounted which opens the second diffusion layer regions by forming and removing the insulating layer. When manufacturing the complementary type semiconductor device, the insulating thin layers 2'' are shaped to the openings 3'' of the insulating layer 2, the N type impurity diffusion layers 4 are molded to the openings 3''' obtained by selectively removing the insulating layers 2'', and the insulating layers 2''' are formed on the layers. The insulating layers on the base are removed extending over the whole surface, and only the openings 3<4>' of the regions capable of functioning as the P type impurity diffusion layers are shaped.
JP55126215A 1980-09-11 1980-09-11 Manufacture of semiconductor device Pending JPS5750424A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55126215A JPS5750424A (en) 1980-09-11 1980-09-11 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55126215A JPS5750424A (en) 1980-09-11 1980-09-11 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5750424A true JPS5750424A (en) 1982-03-24

Family

ID=14929575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55126215A Pending JPS5750424A (en) 1980-09-11 1980-09-11 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5750424A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02305467A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrate circuit
JPH02305463A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacturing method of semiconductor integrated circuit
JPH02305462A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacturing method of semiconductor integrated circuit
JPH02305464A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrated circuit
JPH02305466A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrated circuit
JPH02305465A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacturing method of semiconductor integrated circuit
JPH02305461A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacturing method of semiconductor integrated circuit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02305467A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrate circuit
JPH02305463A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacturing method of semiconductor integrated circuit
JPH02305462A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacturing method of semiconductor integrated circuit
JPH02305464A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrated circuit
JPH02305466A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacture of semiconductor integrated circuit
JPH02305465A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacturing method of semiconductor integrated circuit
JPH02305461A (en) * 1989-05-19 1990-12-19 Sanyo Electric Co Ltd Manufacturing method of semiconductor integrated circuit

Similar Documents

Publication Publication Date Title
JPS5669844A (en) Manufacture of semiconductor device
JPS5750424A (en) Manufacture of semiconductor device
JPS6417473A (en) Manufacture of semiconductor device
JPS55165674A (en) Semiconductor device
JPS5562771A (en) Integrated circuit device
JPS56164578A (en) Manufacture of mos type semiconductor device
JPS5748247A (en) Semiconductor integrated circuit device
JPS5575229A (en) Semiconductor device
JPS5727069A (en) Mos type simiconductor device
JPS56125875A (en) Semiconductor integrated circuit device
JPS57172764A (en) Manufacture of semiconductor element
JPS57184248A (en) Manufacture of semiconductor device
JPS5776864A (en) Manufacture of semiconductor device
JPS5775454A (en) Complementary type mos integrated circuit device
JPS55105332A (en) Manufacture of semiconductor device
JPS5271994A (en) Semiconductor integrated circuit device
JPS56120155A (en) Coil for semiconductor integrated circuit and its manufacture
JPS57132368A (en) Semiconductor device
JPS57103331A (en) Manufacture of semiconductor device
JPS546775A (en) Semiconductor device featuring stepped electrode structure
JPS6444063A (en) Manufacture of semiconductor device
JPS5694672A (en) Manufacture of silicon semiconductor element
JPS6453573A (en) Semiconductor device and its manufacture
JPS53112067A (en) Production of semiconductor device
JPS55120151A (en) Semiconductor integrated circuit