JPS57196577A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS57196577A JPS57196577A JP8141481A JP8141481A JPS57196577A JP S57196577 A JPS57196577 A JP S57196577A JP 8141481 A JP8141481 A JP 8141481A JP 8141481 A JP8141481 A JP 8141481A JP S57196577 A JPS57196577 A JP S57196577A
- Authority
- JP
- Japan
- Prior art keywords
- sio2
- layer
- semiconductor device
- film
- films
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 229910052681 coesite Inorganic materials 0.000 abstract 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract 5
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract 5
- 229910052682 stishovite Inorganic materials 0.000 abstract 5
- 229910052905 tridymite Inorganic materials 0.000 abstract 5
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To obtain the semiconductor device suitable for high integration by a method wherein the surface of an element is flattened without performing a step of flowing phosphorus at a high temperature. CONSTITUTION:SiO2, Si3N4 and SiO2 films are formed on a semiconductor substrate, an ion is implanted using these films as masks, an SiO2 film 37 is formed by performing an LOCOS, and then the insulating layer located on the gate region is removed while the Si3N4 film on a source and drain region is left over. Then, a gate oxide film, a polycrystalline Si layer and an SiO2 layer are formed, these layers are left over on the gate region alone, source and drain regions 42 and 42' are formed by performing an ion implantation, an SiO2 layer 44 is coated, a contact region is provided and then an Al wiring is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8141481A JPS57196577A (en) | 1981-05-28 | 1981-05-28 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8141481A JPS57196577A (en) | 1981-05-28 | 1981-05-28 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57196577A true JPS57196577A (en) | 1982-12-02 |
Family
ID=13745675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8141481A Pending JPS57196577A (en) | 1981-05-28 | 1981-05-28 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57196577A (en) |
-
1981
- 1981-05-28 JP JP8141481A patent/JPS57196577A/en active Pending
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