JPS5739554A - Multilayer wiring method - Google Patents

Multilayer wiring method

Info

Publication number
JPS5739554A
JPS5739554A JP11502780A JP11502780A JPS5739554A JP S5739554 A JPS5739554 A JP S5739554A JP 11502780 A JP11502780 A JP 11502780A JP 11502780 A JP11502780 A JP 11502780A JP S5739554 A JPS5739554 A JP S5739554A
Authority
JP
Japan
Prior art keywords
aluminum
layer
wire
gate
multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11502780A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP11502780A priority Critical patent/JPS5739554A/en
Priority to NLAANVRAGE8103007,A priority patent/NL188775C/en
Priority to GB8120808A priority patent/GB2082838B/en
Priority to FR8115610A priority patent/FR2489042B1/en
Priority to DE19813132645 priority patent/DE3132645A1/en
Publication of JPS5739554A publication Critical patent/JPS5739554A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To prevent the stepwise disconnection of a multilayer wire and to perform a multilayer wire having excellent moisture resistance by covering a lower aluminum wire layer with a glass layer having a melting point lower than that of aluminum, softening the glass layer to form an upper aluminum wire layer and forming an aluminum multilayer wire configuration. CONSTITUTION:Source and drain regions 3, 4, a field oxidized film 2 and a gate oxidized film 5 are formed on a substrate 1, and an MOSFET having a polycrystalline Si gate 6 is formed. A phosphorus glass film 7 is formed on the polycrystalline Si gate 6, the phosphorus glass layer is softened by heat treatment, and an aluminum wire layer 8 is then formed. Subsequently, a low melting point glass film 9 of PbO-B2O3-SiO2-ZnO, etc. is deposited. Then, a contacting hole is opened, a primary aluminum is annealed, and then an upper aluminum wire layer 10 is formed. In this manner, an aluminum multilayer wire having no stepwise disconnection and excellent moisture resistance can be formed.
JP11502780A 1980-08-21 1980-08-21 Multilayer wiring method Pending JPS5739554A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP11502780A JPS5739554A (en) 1980-08-21 1980-08-21 Multilayer wiring method
NLAANVRAGE8103007,A NL188775C (en) 1980-08-21 1981-06-22 METHOD FOR MANUFACTURING A SEMI-CONDUCTOR MULTIPLE WIRING LAYER SEPARATED BY INSULATING GLASS LAYERS.
GB8120808A GB2082838B (en) 1980-08-21 1981-07-06 Semiconductor device with a zinc oxide glass layer
FR8115610A FR2489042B1 (en) 1980-08-21 1981-08-12 SEMICONDUCTOR DEVICE HAVING A MULTI-LAYER INTERCONNECTION STRUCTURE AND MANUFACTURING METHOD THEREOF
DE19813132645 DE3132645A1 (en) 1980-08-21 1981-08-18 SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING MULTILAYER WIRING IN SUCH A

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11502780A JPS5739554A (en) 1980-08-21 1980-08-21 Multilayer wiring method

Publications (1)

Publication Number Publication Date
JPS5739554A true JPS5739554A (en) 1982-03-04

Family

ID=14652402

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11502780A Pending JPS5739554A (en) 1980-08-21 1980-08-21 Multilayer wiring method

Country Status (1)

Country Link
JP (1) JPS5739554A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61164045U (en) * 1986-03-20 1986-10-11

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61164045U (en) * 1986-03-20 1986-10-11

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