GB2082838B - Semiconductor device with a zinc oxide glass layer - Google Patents
Semiconductor device with a zinc oxide glass layerInfo
- Publication number
- GB2082838B GB2082838B GB8120808A GB8120808A GB2082838B GB 2082838 B GB2082838 B GB 2082838B GB 8120808 A GB8120808 A GB 8120808A GB 8120808 A GB8120808 A GB 8120808A GB 2082838 B GB2082838 B GB 2082838B
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- zinc oxide
- glass layer
- oxide glass
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55115026A JPS5739539A (en) | 1980-08-21 | 1980-08-21 | Semiconductor device |
JP11502780A JPS5739554A (en) | 1980-08-21 | 1980-08-21 | Multilayer wiring method |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2082838A GB2082838A (en) | 1982-03-10 |
GB2082838B true GB2082838B (en) | 1984-07-11 |
Family
ID=26453643
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8120808A Expired GB2082838B (en) | 1980-08-21 | 1981-07-06 | Semiconductor device with a zinc oxide glass layer |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE3132645A1 (en) |
FR (1) | FR2489042B1 (en) |
GB (1) | GB2082838B (en) |
NL (1) | NL188775C (en) |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL109459C (en) * | 1960-01-26 | |||
US3511703A (en) * | 1963-09-20 | 1970-05-12 | Motorola Inc | Method for depositing mixed oxide films containing aluminum oxide |
GB1114556A (en) * | 1965-11-26 | 1968-05-22 | Corning Glass Works | Ceramic article and method of making it |
US3475210A (en) * | 1966-05-06 | 1969-10-28 | Fairchild Camera Instr Co | Laminated passivating structure |
FR2024124A1 (en) * | 1968-11-25 | 1970-08-28 | Ibm | |
US3752701A (en) * | 1970-07-27 | 1973-08-14 | Gen Instrument Corp | Glass for coating semiconductors, and semiconductor coated therewith |
US3887733A (en) * | 1974-04-24 | 1975-06-03 | Motorola Inc | Doped oxide reflow process |
JPS51144183A (en) * | 1975-06-06 | 1976-12-10 | Hitachi Ltd | Semiconductor element containing surface protection film |
DE2606029C3 (en) * | 1976-02-14 | 1980-03-06 | Jenaer Glaswerk Schott & Gen., 6500 Mainz | Composite passivation glass based on PbO - B2 O3 - (SiO2 - Al2 O3) with a thermal expansion coefficient (20-300 degrees C) of up to 75 times 10 7 / degrees C for silicon semiconductor components with |
DE2611059A1 (en) * | 1976-03-16 | 1977-09-29 | Siemens Ag | ENCLOSURE SEMI-CONDUCTOR COMPONENT WITH DOUBLE HEAT SINK |
JPS583380B2 (en) * | 1977-03-04 | 1983-01-21 | 株式会社日立製作所 | Semiconductor device and its manufacturing method |
JPS5425178A (en) * | 1977-07-27 | 1979-02-24 | Fujitsu Ltd | Manufacture for semiconductor device |
-
1981
- 1981-06-22 NL NLAANVRAGE8103007,A patent/NL188775C/en not_active IP Right Cessation
- 1981-07-06 GB GB8120808A patent/GB2082838B/en not_active Expired
- 1981-08-12 FR FR8115610A patent/FR2489042B1/en not_active Expired
- 1981-08-18 DE DE19813132645 patent/DE3132645A1/en active Granted
Also Published As
Publication number | Publication date |
---|---|
NL8103007A (en) | 1982-03-16 |
FR2489042A1 (en) | 1982-02-26 |
DE3132645A1 (en) | 1982-06-09 |
FR2489042B1 (en) | 1986-09-26 |
NL188775C (en) | 1992-09-16 |
NL188775B (en) | 1992-04-16 |
DE3132645C2 (en) | 1991-01-10 |
GB2082838A (en) | 1982-03-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19930706 |