DE3132645A1 - Semiconductor element and method for manufacturing a multilayer wiring in such a - Google Patents

Semiconductor element and method for manufacturing a multilayer wiring in such a

Info

Publication number
DE3132645A1
DE3132645A1 DE19813132645 DE3132645A DE3132645A1 DE 3132645 A1 DE3132645 A1 DE 3132645A1 DE 19813132645 DE19813132645 DE 19813132645 DE 3132645 A DE3132645 A DE 3132645A DE 3132645 A1 DE3132645 A1 DE 3132645A1
Authority
DE
Grant status
Application
Patent type
Prior art keywords
manufacturing
method
semiconductor element
multilayer wiring
multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19813132645
Other languages
German (de)
Other versions
DE3132645C2 (en )
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KABUSHIKI KAISHA SUWA SEIKOSHA, SHINJUKU, TOKIO-TO
Original Assignee
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/314Inorganic layers
    • H01L21/316Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604Deposition from a gas or vapour
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • H01L23/3171Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE19813132645 1980-08-21 1981-08-18 Expired - Fee Related DE3132645C2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP11502780A JPS5739554A (en) 1980-08-21 1980-08-21 Multilayer wiring method
JP11502680A JPS5739539A (en) 1980-08-21 1980-08-21 Semiconductor device

Publications (2)

Publication Number Publication Date
DE3132645A1 true true DE3132645A1 (en) 1982-06-09
DE3132645C2 DE3132645C2 (en) 1991-01-10

Family

ID=26453643

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813132645 Expired - Fee Related DE3132645C2 (en) 1980-08-21 1981-08-18

Country Status (4)

Country Link
DE (1) DE3132645C2 (en)
FR (1) FR2489042B1 (en)
GB (1) GB2082838B (en)
NL (1) NL188775C (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3113878A (en) * 1960-01-26 1963-12-10 Corning Glass Works Thermally devitrifiable sealing glasses and composite articles
US3475210A (en) * 1966-05-06 1969-10-28 Fairchild Camera Instr Co Laminated passivating structure
US3511703A (en) * 1963-09-20 1970-05-12 Motorola Inc Method for depositing mixed oxide films containing aluminum oxide
DE1958800A1 (en) * 1968-11-25 1970-07-09 Ibm Multiple protective layers for the passivation of semiconductor devices and processes for their preparation
US3752701A (en) * 1970-07-27 1973-08-14 Gen Instrument Corp Glass for coating semiconductors, and semiconductor coated therewith
US3778242A (en) * 1965-11-26 1973-12-11 Owens Illinois Inc Low temperature sealant glass for sealing integrated circuit package parts
US3887733A (en) * 1974-04-24 1975-06-03 Motorola Inc Doped oxide reflow process
DE2606029A1 (en) * 1976-02-14 1977-12-29 Jenaer Glaswerk Schott & Gen Glass for hermetically wrapping and passivate of semiconductor arrangements
DE2809233A1 (en) * 1977-03-04 1978-09-07 Hitachi Ltd Semiconductor device and process for their manufacture
DE2832740A1 (en) * 1977-07-27 1979-02-01 Fujitsu Ltd A method of manufacturing a semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51144183A (en) * 1975-06-06 1976-12-10 Hitachi Ltd Semiconductor element containing surface protection film
DE2611059A1 (en) * 1976-03-16 1977-09-29 Siemens Ag Gehaeuseloses semiconductor component-with doppelwaermesenke

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3113878A (en) * 1960-01-26 1963-12-10 Corning Glass Works Thermally devitrifiable sealing glasses and composite articles
US3511703A (en) * 1963-09-20 1970-05-12 Motorola Inc Method for depositing mixed oxide films containing aluminum oxide
US3778242A (en) * 1965-11-26 1973-12-11 Owens Illinois Inc Low temperature sealant glass for sealing integrated circuit package parts
US3475210A (en) * 1966-05-06 1969-10-28 Fairchild Camera Instr Co Laminated passivating structure
DE1958800A1 (en) * 1968-11-25 1970-07-09 Ibm Multiple protective layers for the passivation of semiconductor devices and processes for their preparation
US3752701A (en) * 1970-07-27 1973-08-14 Gen Instrument Corp Glass for coating semiconductors, and semiconductor coated therewith
US3887733A (en) * 1974-04-24 1975-06-03 Motorola Inc Doped oxide reflow process
DE2606029A1 (en) * 1976-02-14 1977-12-29 Jenaer Glaswerk Schott & Gen Glass for hermetically wrapping and passivate of semiconductor arrangements
DE2809233A1 (en) * 1977-03-04 1978-09-07 Hitachi Ltd Semiconductor device and process for their manufacture
DE2832740A1 (en) * 1977-07-27 1979-02-01 Fujitsu Ltd A method of manufacturing a semiconductor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Dr. Erhard Ühlein, Römpps Chemisches Wörterbuch, Stuttgart 1969 *
US-PS 4 349 584(nachveröffentlicht) *

Also Published As

Publication number Publication date Type
NL8103007A (en) 1982-03-16 application
DE3132645C2 (en) 1991-01-10 grant
FR2489042B1 (en) 1986-09-26 grant
NL188775B (en) 1992-04-16 application
GB2082838B (en) 1984-07-11 grant
NL188775C (en) 1992-09-16 grant
FR2489042A1 (en) 1982-02-26 application
GB2082838A (en) 1982-03-10 application

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8127 New person/name/address of the applicant

Owner name: KABUSHIKI KAISHA SUWA SEIKOSHA, SHINJUKU, TOKIO-TO

D2 Grant after examination
8380 Miscellaneous part iii

Free format text: DIE ENTGEGENGEHALTENE DRUCKSCHRIFT "US 31 13 879" AENDERN IN "US 31 13 878"

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee