JPS5791518A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5791518A
JPS5791518A JP16679680A JP16679680A JPS5791518A JP S5791518 A JPS5791518 A JP S5791518A JP 16679680 A JP16679680 A JP 16679680A JP 16679680 A JP16679680 A JP 16679680A JP S5791518 A JPS5791518 A JP S5791518A
Authority
JP
Japan
Prior art keywords
film
polycrystalline
covered
substrate
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16679680A
Other languages
Japanese (ja)
Inventor
Keiji Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16679680A priority Critical patent/JPS5791518A/en
Publication of JPS5791518A publication Critical patent/JPS5791518A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To increase the diameters of the crystalline grains by covering an insulating film having unevenness on a substrate with a semiconductor film and ion injecting before or after annealing the film with a laser. CONSTITUTION:An oxidized Si 2 is covered on a substrate 1 formed of Si, or glass, fine uneven structure is formed by photolithographic technique, a polycrystalline Si 3 is covered, ions 4 of B, or P are implanted, and the film is locally or entirely annealed with a laser light 5, thereby increasing the crystalline grain diameter. In this manner, the characteristics of a semiconductor element can be enhanced, and the resistance of the polycrystalline Si can be lowered.
JP16679680A 1980-11-28 1980-11-28 Manufacture of semiconductor device Pending JPS5791518A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16679680A JPS5791518A (en) 1980-11-28 1980-11-28 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16679680A JPS5791518A (en) 1980-11-28 1980-11-28 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5791518A true JPS5791518A (en) 1982-06-07

Family

ID=15837830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16679680A Pending JPS5791518A (en) 1980-11-28 1980-11-28 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5791518A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2517123A1 (en) * 1981-11-26 1983-05-27 Mitsubishi Electric Corp METHOD FOR FORMING A SINGLE-CRYSTAL SEMICONDUCTOR FILM ON AN INSULATOR
JPH02143414A (en) * 1988-11-24 1990-06-01 Agency Of Ind Science & Technol Formation of single crystal film
US5342792A (en) * 1986-03-07 1994-08-30 Canon Kabushiki Kaisha Method of manufacturing semiconductor memory element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2517123A1 (en) * 1981-11-26 1983-05-27 Mitsubishi Electric Corp METHOD FOR FORMING A SINGLE-CRYSTAL SEMICONDUCTOR FILM ON AN INSULATOR
US5342792A (en) * 1986-03-07 1994-08-30 Canon Kabushiki Kaisha Method of manufacturing semiconductor memory element
JPH02143414A (en) * 1988-11-24 1990-06-01 Agency Of Ind Science & Technol Formation of single crystal film

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