FR2275888A1 - COMPLEMENTARY FIELD-EFFECT TRANSISTOR STRUCTURE WITH INSULATED DOOR AND PROCESS FOR ITS MANUFACTURING - Google Patents
COMPLEMENTARY FIELD-EFFECT TRANSISTOR STRUCTURE WITH INSULATED DOOR AND PROCESS FOR ITS MANUFACTURINGInfo
- Publication number
- FR2275888A1 FR2275888A1 FR7516972A FR7516972A FR2275888A1 FR 2275888 A1 FR2275888 A1 FR 2275888A1 FR 7516972 A FR7516972 A FR 7516972A FR 7516972 A FR7516972 A FR 7516972A FR 2275888 A1 FR2275888 A1 FR 2275888A1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- effect transistor
- transistor structure
- insulated door
- complementary field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000295 complement effect Effects 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
- H01L21/76218—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers introducing both types of electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers, e.g. for isolation of complementary doped regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US47535874A | 1974-06-03 | 1974-06-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2275888A1 true FR2275888A1 (en) | 1976-01-16 |
FR2275888B1 FR2275888B1 (en) | 1981-08-21 |
Family
ID=23887225
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7516972A Granted FR2275888A1 (en) | 1974-06-03 | 1975-05-30 | COMPLEMENTARY FIELD-EFFECT TRANSISTOR STRUCTURE WITH INSULATED DOOR AND PROCESS FOR ITS MANUFACTURING |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5619746B2 (en) |
CA (1) | CA1017073A (en) |
DE (1) | DE2523379C2 (en) |
FR (1) | FR2275888A1 (en) |
GB (1) | GB1499548A (en) |
HK (1) | HK27981A (en) |
IT (1) | IT1032951B (en) |
NL (1) | NL185591C (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0028786A1 (en) * | 1979-11-13 | 1981-05-20 | Deutsche ITT Industries GmbH | Ion implantations method |
EP0063578A1 (en) * | 1980-10-20 | 1982-11-03 | Ncr Co | Process for forming a polysilicon gate integrated circuit device. |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5160466A (en) * | 1974-11-22 | 1976-05-26 | Hitachi Ltd | Handotaisochino seizohoho |
JPS5286083A (en) * | 1976-01-12 | 1977-07-16 | Hitachi Ltd | Production of complimentary isolation gate field effect transistor |
JPS5955054A (en) * | 1982-09-24 | 1984-03-29 | Hitachi Ltd | Manufacture of semiconductor device |
JPH0636425B2 (en) * | 1983-02-23 | 1994-05-11 | テキサス インスツルメンツ インコ−ポレイテツド | Method for manufacturing CMOS device |
EP0123384A1 (en) * | 1983-02-25 | 1984-10-31 | Western Digital Corporation | Complementary insulated gate field effect integrated circuit structure and process for fabricating the structure |
JP2572653B2 (en) * | 1989-12-29 | 1997-01-16 | セイコーエプソン株式会社 | Method for manufacturing semiconductor device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1104070B (en) * | 1959-01-27 | 1961-04-06 | Siemens Ag | Method for producing a semiconductor triode having an intrinsic or nearly intrinsic zone |
US3356858A (en) * | 1963-06-18 | 1967-12-05 | Fairchild Camera Instr Co | Low stand-by power complementary field effect circuitry |
US3648225A (en) * | 1969-12-04 | 1972-03-07 | Sperry Rand Corp | Digital sonar doppler navigator |
NL160988C (en) * | 1971-06-08 | 1979-12-17 | Philips Nv | SEMICONDUCTOR DEVICE WITH A SEMICONDUCTOR BODY CONTAINING AT LEAST ONE FIRST FIELD EFFECT TRANSISTOR WITH INSULATED CONTROL ELECTRODE AND METHOD FOR MANUFACTURE OF THE SEMICONDUCTOR DEVICE. |
JPS49123287A (en) * | 1973-03-28 | 1974-11-26 |
-
1975
- 1975-05-06 CA CA226,321A patent/CA1017073A/en not_active Expired
- 1975-05-19 GB GB2128575A patent/GB1499548A/en not_active Expired
- 1975-05-21 IT IT6831975A patent/IT1032951B/en active
- 1975-05-27 DE DE19752523379 patent/DE2523379C2/en not_active Expired
- 1975-05-28 NL NL7506288A patent/NL185591C/en not_active IP Right Cessation
- 1975-05-30 FR FR7516972A patent/FR2275888A1/en active Granted
- 1975-06-02 JP JP6545175A patent/JPS5619746B2/ja not_active Expired
-
1981
- 1981-06-25 HK HK27981A patent/HK27981A/en unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0028786A1 (en) * | 1979-11-13 | 1981-05-20 | Deutsche ITT Industries GmbH | Ion implantations method |
EP0063578A1 (en) * | 1980-10-20 | 1982-11-03 | Ncr Co | Process for forming a polysilicon gate integrated circuit device. |
EP0063578A4 (en) * | 1980-10-20 | 1984-07-06 | Ncr Corp | Process for forming a polysilicon gate integrated circuit device. |
Also Published As
Publication number | Publication date |
---|---|
IT1032951B (en) | 1979-06-20 |
JPS5619746B2 (en) | 1981-05-09 |
NL185591C (en) | 1990-05-16 |
JPS515969A (en) | 1976-01-19 |
CA1017073A (en) | 1977-09-06 |
FR2275888B1 (en) | 1981-08-21 |
DE2523379C2 (en) | 1986-10-02 |
HK27981A (en) | 1981-07-03 |
GB1499548A (en) | 1978-02-01 |
NL7506288A (en) | 1975-12-05 |
DE2523379A1 (en) | 1975-12-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2293796A1 (en) | FIELD-EFFECT TRANSISTOR WITH INSULATED DOOR WITH SOURCE AND DRAIN IN RELIEF AND ITS MANUFACTURING PROCESS | |
FR2275880A1 (en) | PERFECTED PROCESS FOR THE MANUFACTURE OF A FIELD-EFFECT TRANSISTOR STRUCTURE WITH INSULATED DOOR | |
BE805485A (en) | COMPLEMENTARY FIELD-EFFECT TRANSISTORS AND THEIR MANUFACTURING PROCESS | |
BE853547A (en) | PROCESS FOR MANUFACTURING FIELD-EFFECT TRANSISTORS | |
FR2290760A1 (en) | SELF-ALIGNED FIELD-EFFECT TRANSISTOR WITH SILICON DOOR AND ITS MANUFACTURING PROCESS | |
BE827147A (en) | DEEP DEPLETION INSULATED DOOR FIELD EFFECT TRANSISTORS | |
JPS5239381A (en) | Insulated gate fet transistor | |
FR2325186A1 (en) | TRANSISTOR MOS MANUFACTURING PROCESS AND RESULTING TRANSISTOR STRUCTURE | |
BE805959A (en) | PROCESS FOR STABILIZING FIELD-EFFECT TRANSISTOR DEVICES INCLUDING SILICON DOORS AND COMPOSITE NITRIDE-OXIDE DOORS DIELECTRICS | |
FR2284988A1 (en) | INSULATED GRILLE FIELD EFFECT TRANSISTOR AND MANUFACTURING PROCESS | |
BE860064A (en) | FIELD-EFFECT MICROMINIATURE TRANSISTOR AND GALLIUM ARSENIDE AND ITS REALIZATION PROCESS | |
FR2312838A1 (en) | FIELD-EFFECT TRANSISTOR DETECTION AMPLIFIER | |
FR2291641A1 (en) | FIELD-EFFECT TRANSISTOR AMPLIFIER | |
JPS5283181A (en) | Insulated gate fet transistor device | |
FR2333348A1 (en) | METHOD OF MANUFACTURING FIELD-EFFECT TRANSISTORS AND RESULTING TRANSISTORS | |
JPS5275943A (en) | Dynamic shift register using insulated gate fet transistor | |
BE818547A (en) | SEMICONDUCTOR DEVICE INCLUDING A FIELD-EFFECT TRANSISTOR WITH INSULATED DOOR AND MANUFACTURING PROCESS | |
BE835288A (en) | MANUFACTURING PROCESS OF PERFECTED FIELD-EFFECT TRANSISTORS | |
FR2275888A1 (en) | COMPLEMENTARY FIELD-EFFECT TRANSISTOR STRUCTURE WITH INSULATED DOOR AND PROCESS FOR ITS MANUFACTURING | |
FR2318500A1 (en) | COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR CIRCUIT AND ITS MANUFACTURING PROCESS | |
FR2289065A1 (en) | COMPLEMENTARY FIELD-EFFECT TRANSISTOR AMPLIFIER | |
BE780695A (en) | METHOD OF MANUFACTURING A FIELD-EFFECT TRANSISTOR | |
BE753453A (en) | PROCESS FOR MANUFACTURING COMPLEMENTARY FIELD EFFECT AND INSULATED DOOR TRANSISTORS AND TRANSISTORS OBTAINED BY THIS PROCESS | |
FR2346855A1 (en) | METHOD FOR MANUFACTURING FIELD-EFFECT TRANSISTOR DEVICES AND RESULTING DEVICES | |
BE813051A (en) | PROCESS FOR MANUFACTURING INTEGRATED CIRCUITS INCLUDING COMPLEMENTARY CHANNEL FIELD-EFFECT TRANSISTORS |