JPS57210674A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57210674A JPS57210674A JP9508681A JP9508681A JPS57210674A JP S57210674 A JPS57210674 A JP S57210674A JP 9508681 A JP9508681 A JP 9508681A JP 9508681 A JP9508681 A JP 9508681A JP S57210674 A JPS57210674 A JP S57210674A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate
- substrate
- conductive type
- oxidized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 3
- 239000010410 layer Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To perform high withstand voltage with a simple structure by forming field oxidized films between the gate and the drain and between the source and the gate of an MOS transistor and further forming an impurity region of reverse conductive type to the substrate under the oxidized film. CONSTITUTION:An SiO2 film 302 is formed on an Si substrate 301, an Si3N4 film 303 is then formed, is patterned, impurity ions of reverse conductive type to the substrate are implanted with the patterned film as a mask, thereby forming an offset injection layer 305. Impurity ions of the same conductive type as the substrate are implanted to form a stopper injection layer 304. Then, a selective oxidation is performed, an oxidized film 306 is formed, a gate oxidized film 307 and a gate metal 308 are formed, and source and drain diffused layer 309 are further formed. Finally, an interlayer insulating film 310 and a wiring metal 311 are formed. In this manner, a high withstand voltage can be readily performed, thereby reducing a parasitic capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9508681A JPS57210674A (en) | 1981-06-19 | 1981-06-19 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9508681A JPS57210674A (en) | 1981-06-19 | 1981-06-19 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57210674A true JPS57210674A (en) | 1982-12-24 |
Family
ID=14128119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9508681A Pending JPS57210674A (en) | 1981-06-19 | 1981-06-19 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57210674A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52131483A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Mis-type semiconductor device |
-
1981
- 1981-06-19 JP JP9508681A patent/JPS57210674A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52131483A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Mis-type semiconductor device |
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